Abstract: Examples of the present disclosure describe systems and methods relating to conversational system user experience. In an example, a conversational system may use one or more sensors of a user device to affect the topic or direction of a conversation or to identify a new conversation topic. The conversational system may also receive input from a user, wherein a GUI may enable the user to specify or alter semantic information used during the conversation. The GUI may comprise one or more skeuomorphic elements designed to provide a familiar or intuitive way for the user to interact with the conversational system. The GUI may also be used to disambiguate messages or convey emotion or sentiment to the user. In another example, haptic or audio feedback may be provided alongside a message to convey emotion to the user during the conversation.

Abstract: Examples of the present disclosure describe systems and methods relating to conversational system user experience. In an example, a conversational system may use one or more sensors of a user device to affect the topic or direction of a conversation or to identify a new conversation topic. The conversational system may also receive input from a user, wherein a GUI may enable the user to specify or alter semantic information used during the conversation. The GUI may comprise one or more skeuomorphic elements designed to provide a familiar or intuitive way for the user to interact with the conversational system. The GUI may also be used to disambiguate messages or convey emotion or sentiment to the user. In another example, haptic or audio feedback may be provided alongside a message to convey emotion to the user during the conversation.

Abstract: A varactor diode having a first electrode comprising a well region of a first conductivity type in a substrate, a second electrode comprising a first plurality of diffusion regions of a second conductivity type abutting isolation regions disposed in said well region, and a second plurality of diffusion regions of said first conductivity type extending laterally from portions of said first plurality of diffusion regions not adjacent said isolation regions and having a dopant concentration greater than that of said first plurality of diffusion regions. The varactor has a tunability of at least approximately 3.5 in a range of applied voltage between approximately 0V to 3V, an approximately linear change in capacitive value in a range of applied voltage between approximately 0V to 2V, and a Q of at least approximately 100 at a circuit operating frequency of approximately 2 GHz.

Abstract: A varactor diode having a first electrode comprising a well region of a first conductivity type in a substrate, a second electrode comprising a first plurality of diffusion regions of a second conductivity type abutting isolation regions disposed in said well region, and a second plurality of diffusion regions of said first conductivity type extending laterally from portions of said first plurality of diffusion regions not adjacent said isolation regions and having a dopant concentration greater than that of said first plurality of diffusion regions. The varactor has a tunability of at least approximately 3.5 in a range of applied voltage between approximately 0V to 3V, an approximately linear change in capacitive value in a range of applied voltage between approximately 0V to 2V, and a Q of at least approximately 100 at a circuit operating frequency of approximately 2 GHz.

Abstract: A varactor diode having a first electrode comprising a well region of a first conductivity type in a substrate, a second electrode comprising a first plurality of diffusion regions of a second conductivity type abutting isolation regions disposed in said well region, and a second plurality of diffusion regions of said first conductivity type extending laterally from portions of said first plurality of diffusion regions not adjacent said isolation regions and having a dopant concentration greater than that of said first plurality of diffusion regions. The varactor has a tunability of at least approximately 3.5 in a range of applied voltage between approximately 0V to 3V, an approximately linear change in capacitive value in a range of applied voltage between approximately 0V to 2V, and a Q of at least approximately 100 at a circuit operating frequency of approximately 2 GHz.

Abstract: A varactor diode having a first electrode comprising a well region of a first conductivity type in a substrate, a second electrode comprising a first plurality of diffusion regions of a second conductivity type abutting isolation regions disposed in said well region, and a second plurality of diffusion regions of said first conductivity type extending laterally from portions of said first plurality of diffusion regions not adjacent said isolation regions and having a dopant concentration greater than that of said first plurality of diffusion regions. The varactor has a tunability of at least approximately 3.5 in a range of applied voltage between approximately 0V to 3V, an approximately linear change in capacitive value in a range of applied voltage between approximately 0V to 2V, and a Q of at least approximately 100 at a circuit operating frequency of approximately 2 GHz.