Abstract: Methods for operating a nonvolatile memory device including multi-level cells configured to store at least n logic states, where n is equal to or greater than four are provided. The methods may include selecting at least one read voltage for a read operation based on information set at a portion of an address of the respective one of the multi-level cells, and determining multi-level data stored in the respective multi-level cell using the at least one selected read voltage.

Abstract: A DC power source voltage is supplied to a center tap of a primary winding, and first and second semiconductor switches alternately turned on are disposed between each of both ends of the primary winding and a common potential point, and a current flowing through a load is fed back and PWM control of each of the semiconductor switches is performed. Also, snubber circuits are respectively connected between a ground and the center tap of the primary winding, and an abnormal high voltage at the time of switching is reduced. Also, a parallel running of plural inverters is simply performed by disposing PWM comparators corresponding to the first and second semiconductor switches.

Abstract: Methods for operating a nonvolatile memory device including multi-level cells configured to store at least n logic states, where n is equal to or greater than four are provided. The methods may include selecting at least one read voltage for a read operation based on information set at a portion of an address of the respective one of the multi-level cells, and determining multi-level data stored in the respective multi-level cell using the at least one selected read voltage.

Abstract: A DC power source voltage is supplied to a center tap of a primary winding, and first and second semiconductor switches alternately turned on are disposed between each of both ends of the primary winding and a common potential point, and a current flowing through a load is fed back and PWM control of each of the semiconductor switches is performed. Also, snubber circuits are respectively connected between a ground and the center tap of the primary winding, and an abnormal high voltage at the time of switching is reduced. Also, a parallel running of plural inverters is simply performed by disposing PWM comparators corresponding to the first and second semiconductor switches.

Abstract: A DC power source voltage is supplied to a center tap of a primary winding, and first and second semiconductor switches alternately turned on are disposed between each of both ends of the primary winding and a common potential point, and a current flowing through a load is fed back and PWM control of each of the semiconductor switches is performed. Also, snubber circuits are respectively connected between a ground and the center tap of the primary winding, and an abnormal high voltage at the time of switching is reduced. Also, a parallel running of plural inverters is simply performed by disposing PWM comparators corresponding to the first and second semiconductor switches.

Abstract: A DC power source voltage is supplied to a center tap of a primary winding, and first and second semiconductor switches alternately turned on are disposed between each of both ends of the primary winding and a common potential point, and a current flowing through a load is fed back and PWM control of each of the semiconductor switches is performed. Also, snubber circuits are respectively connected between a ground and the center tap of the primary winding, and an abnormal high voltage at the time of switching is reduced. Also, a parallel running of plural inverters is simply performed by disposing PWM comparators corresponding to the first and second semiconductor switches.

Abstract: A DC power source voltage is supplied to a center tap of a primary winding, and first and second semiconductor switches alternately turned on are disposed between each of both ends of the primary winding and a common potential point, and a current flowing through a load is fed back and PWM control of each of the semiconductor switches is performed. Also, snubber circuits are respectively connected between a ground and the center tap of the primary winding, and an abnormal high voltage at the time of switching is reduced. Also, a parallel running of plural inverters is simply performed by disposing PWM comparators corresponding to the first and second semiconductor switches.

Abstract: A DC power source voltage is supplied to a center tap of a primary winding, and first and second semiconductor switches alternately turned on are disposed between each of both ends of the primary winding and a common potential point, and a current flowing through a load is fed back and PWM control of each of the semiconductor switches is performed. Also, snubber circuits are respectively connected between a ground and the center tap of the primary winding, and an abnormal high voltage at the time of switching is reduced. Also, a parallel running of plural inverters is simply performed by disposing PWM comparators corresponding to the first and second semiconductor switches.