Abstract: A laminate structure having an indium target with the occurrence of defects being well controlled and excellent in adhesion between the indium target and a backing tube is provided. A laminate structure of an indium target and a backing tube wherein a defect area ratio at an indium-backing tube interface is 5.0% or less.

Abstract: A sputtering target according to the disclosure includes 5 wtppm to 10,000 wtppm of Cu and the balance of In and has a relative density of 99% or more and an average grain size of 3,000 ?m or less.

Abstract: An indium sputtering target with a short time to attain a stable film deposition rate once sputtering has begun is provided. An indium sputtering target having a surface to be sputtered with an arithmetic average roughness Ra of from 5 ?m to 70 ?m prior to sputtering.

Abstract: Provided are an indium cylindrical sputtering target capable of providing good film thickness distribution and a method for production thereof. The indium cylindrical target comprises crystal grains whose average size is 1 mm to 20 mm over its surface to be sputtered. The method for manufacturing the indium cylindrical target includes the steps of: casting a semi-finished product of an indium cylindrical target integrated with a backing tube; and subjecting the semi-finished product to plastic working in its radial direction, wherein the plastic working is performed with a total thickness reduction rate of at least 10% over its longitudinal direction.

Abstract: Provided are an indium target capable of achieving a high deposition rate while suppressing the occurrence of arcing, and a method for manufacturing the indium target. In the process of solidification at the time of melting and casting an indium ingot, ultrasonic vibration is applied to molten indium liquid which is at least in a state immediately before solidification, and thereby, coarsening of the grain size is suppressed. Thus, an indium target is provided An indium target in which an overall average grain size is 10 mm or less; for the grains observed from a cross-section parallel to a thickness direction, a ratio of an average grain size in a direction parallel to the thickness direction with respect to an average grain size in a direction perpendicular to the thickness direction is 0.7 to 1.1; and pores with a pore size of 50 ?m or greater exists at a density of 1 pore/cm3 or less.

Abstract: A laminate structure having an indium target with the occurrence of defects being well controlled and excellent in adhesion between the indium target and a backing tube is provided. A laminate structure of an indium target and a backing tube wherein a defect area ratio at an indium-backing tube interface is 5.0% or less.

Abstract: A sputtering target according to the disclosure includes 5 wtppm to 10,000 wtppm of Cu and the balance of In and has a relative density of 99% or more and an average grain size of 3,000 ?m or less.

Abstract: Provided are an indium cylindrical sputtering target capable of providing good film thickness distribution and a method for production thereof. The indium cylindrical target comprises crystal grains whose average size is 1 mm to 20 mm over its surface to be sputtered. The method for manufacturing the indium cylindrical target includes the steps of: casting a semi-finished product of an indium cylindrical target integrated with a backing tube; and subjecting the semi-finished product to plastic working in its radial direction, wherein the plastic working is performed with a total thickness reduction rate of at least 10% over its longitudinal direction.

Abstract: The present invention provides an indium target and manufacturing method thereof, where deposition rate is high, initial discharge voltage is low, and deposition rate and discharge voltage, from the start of sputtering to the end of sputtering, are stable. In the indium target, an aspect ratio (length of longer direction/length of shorter direction) of crystal particle, observed from cross-section direction of the target, is 2.0 or less.

Abstract: Provided by the present invention is a laminated structure with good use efficiency, in which diffusion of tin from an indium-tin solder material to an indium target is favorably suppressed, and a method for producing the same. The laminated structure has a backing plate, an indium-tin solder material, and an indium target laminated in this order, and the concentration of tin in the 2.5 to 3.0 mm thickness range of the indium target from the indium-tin solder material side surface is 5 wtppm or less.

Abstract: An indium sputtering target with a short time to attain a stable film deposition rate once sputtering has begun is provided. An indium sputtering target having a surface to be sputtered with an arithmetic average roughness Ra of from 5 ?m to 70 ?m prior to sputtering.

Abstract: Provided are an indium target capable of achieving a high deposition rate while suppressing the occurrence of arcing, and a method for manufacturing the indium target. In the process of solidification at the time of melting and casting an indium ingot, ultrasonic vibration is applied to molten indium liquid which is at least in a state immediately before solidification, and thereby, coarsening of the grain size is suppressed. Thus, an indium target is provided An indium target in which an overall average grain size is 10 mm or less; for the grains observed from a cross-section parallel to a thickness direction, a ratio of an average grain size in a direction parallel to the thickness direction with respect to an average grain size in a direction perpendicular to the thickness direction is 0.7 to 1.1; and pores with a pore size of 50 ?m or greater exists at a density of 1 pore/cm3 or less.

Abstract: Provided by the present invention is a laminated structure with good use efficiency, in which diffusion of tin from an indium-tin solder material to an indium target is favorably suppressed, and a method for producing the same. The laminated structure has a backing plate, an indium-tin solder material, and an indium target laminated in this order, and the concentration of tin in the 2.5 to 3.0 mm thickness range of the indium target from the indium-tin solder material side surface is 5 wtppm or less.

Abstract: Provided are an indium target that can favorably inhibit the occurrence of arcing, and a method for producing the indium target. The indium target having a surface arithmetic average roughness (Ra) of 1.6 ?m or less.

Abstract: The present invention provides an indium target and manufacturing method thereof, where deposition rate is high, initial discharge voltage is low, and deposition rate and discharge voltage, from the start of sputtering to the end of sputtering, are stable. In the indium target, an aspect ratio (length of longer direction/length of shorter direction) of crystal particle, observed from cross-section direction of the target, is 2.0 or less.

Abstract: The present invention provides a novel indium target and manufacturing method thereof, where an abnormal electrical discharge at sputtering and a generation of particles in a produced film can be inhibited excellently. The indium target contains not more than 1500 number/gram of inclusions having a particle size of 0.5 ?m to 20 ?m.