Patents by Inventor Yousuke Konno

Yousuke Konno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200230590
    Abstract: Provided are an anion exchange resin being capable of producing an electrolyte membrane, a binder for forming an electrode catalyst layer and a battery electrode catalyst layer, which have improved electrical properties and chemical properties. For example, used is an anion exchange resin which has a hydrophobic unit being composed of bisphenol AF residues repeated via carbon-carbon bond and a hydrophilic unit being composed of hydrophilic groups repeated via carbon-carbon bond, in which the hydrophilic group is formed by connecting an anion exchange group to a fluorene backbone via a divalent saturated hydrocarbon group, and in which the hydrophobic unit and the hydrophilic unit are connected via carbon-carbon bond.
    Type: Application
    Filed: November 20, 2019
    Publication date: July 23, 2020
    Applicants: University Of Yamanashi, Takahata Precision Co., Ltd.
    Inventors: Kenji MIYATAKE, Junpei Miyake, Taro Kimura, Naoki Yokota, Katsuya Nagase, Yousuke Konno, Koichiro Asazawa, Aoi Takano, Takeshi Kato
  • Patent number: 8691496
    Abstract: A method for forming a resist under layer film includes providing a composition for forming a resist under layer film on a substrate which is to be processed. The composition includes a solvent and a calixarene compound or a derivative of the calixarene compound. The composition is set under an oxidizing atmosphere with an oxygen content of 1% or more by volume to form a resist under layer film.
    Type: Grant
    Filed: September 11, 2012
    Date of Patent: April 8, 2014
    Assignee: JSR Corporation
    Inventors: Yousuke Konno, Nakaatsu Yoshimura, Fumihiro Toyokawa, Hikaru Sugita
  • Patent number: 8663905
    Abstract: A resist under layer film-forming composition comprises (A) an aminated fullerene having at least one amino group bonded to a fullerene skeleton, and (B) a solvent. The composition exhibits excellent etching resistance, causes an under layer film pattern to bend only with difficulty in a dry etching process, and can transfer a resist pattern faithfully onto a substrate to be processed with high reproducibility.
    Type: Grant
    Filed: November 19, 2007
    Date of Patent: March 4, 2014
    Assignee: JSR Corporation
    Inventors: Nakaatsu Yoshimura, Yousuke Konno
  • Patent number: 8431676
    Abstract: The invention described herein relates to a polyarylene copolymer comprising a structural unit represented by formula (1?): where the structural variables are defined herein. The invention also relates to a solid polymer electrolyte, a proton conductive membrane and A proton conductive membrane for direct methanol fuel cell which contains the polyarylene copolymer.
    Type: Grant
    Filed: April 24, 2007
    Date of Patent: April 30, 2013
    Assignee: JSR Corporation
    Inventors: Yoshitaka Yamakawa, Yousuke Konno, Teruhiko Umehara
  • Publication number: 20130004900
    Abstract: A method for forming a resist under layer film includes providing a composition for forming a resist under layer film on a substrate which is to be processed. The composition includes a solvent and a calixarene compound or a derivative of the calixarene compound. The composition is set under an oxidizing atmosphere with an oxygen content of 1% or more by volume to form a resist under layer film.
    Type: Application
    Filed: September 11, 2012
    Publication date: January 3, 2013
    Applicant: JSR Corporation
    Inventors: Yousuke Konno, Nakaatsu Yoshimura, Fumihiro Toyokawa, Hikaru Sugita
  • Patent number: 8334338
    Abstract: A composition for forming a resist lower layer film, which contains (A) a resin, (B) a butyl ether group-containing crosslinking agent and (C) a solvent.
    Type: Grant
    Filed: May 21, 2008
    Date of Patent: December 18, 2012
    Assignee: JSR Corporation
    Inventors: Nakaatsu Yoshimura, Yousuke Konno
  • Patent number: 8288073
    Abstract: This invention provides a method for resist under layer film formation, which can form a resist under layer film which can function as an anti-reflection film, is excellent in pattern transfer properties and etching resistance, and does not cause bending of a pattern even in the transfer of a fined pattern, and a composition for the resist under layer film for use in the method, and a method for pattern formation. The method for resist under layer film formation comprises the steps of coating a composition for resist under layer film formation (for example, a composition comprising a compound having a phenolic hydroxyl group, a solvent, and an accelerator) onto a substrate to be processed, and treating the formed coating film under an oxidizing atmosphere having an oxygen concentration of not less than 1% by volume and a temperature of 300° C. or higher to form a resist under layer film.
    Type: Grant
    Filed: September 18, 2007
    Date of Patent: October 16, 2012
    Assignee: JSR Corporation
    Inventors: Yousuke Konno, Nakaatsu Yoshimura, Fumihiro Toyokawa, Hikaru Sugita
  • Publication number: 20110251323
    Abstract: A composition for forming a resist lower layer film, which contains (A) a resin, (B) a butyl ether group-containing crosslinking agent and (C) a solvent.
    Type: Application
    Filed: May 21, 2008
    Publication date: October 13, 2011
    Inventors: Nakaatsu Yoshimura, Yousuke Konno
  • Publication number: 20100174042
    Abstract: Sulfonated polymers have excellent processability and methanol resistance.
    Type: Application
    Filed: April 24, 2007
    Publication date: July 8, 2010
    Applicant: JSR CORPORATION
    Inventors: Yoshitaka Yamakawa, Yousuke Konno, Teruhiko Umehara
  • Patent number: 7749681
    Abstract: A composition for forming a lower layer film comprises a polymer (A) having a naphthalene derivative structural unit shown by the following formula (1), wherein R1 represents a hydroxyl group and the like, X represents a substitutable alkylene group having 1 to 20 carbon atoms and the like, n represents 0 to 6, m represents 1 to 8, and n+m represents an integer from 1 to 8, provided that two or more R1s may be the same or different and two or more Xs may be the same or different.
    Type: Grant
    Filed: March 14, 2007
    Date of Patent: July 6, 2010
    Assignee: JSR Corporation
    Inventors: Nakaatsu Yoshimura, Yousuke Konno, Hikaru Sugita, Junichi Takahashi
  • Publication number: 20100081082
    Abstract: A resist under layer film-forming composition comprises (A) an aminated fullerene having at least one amino group bonded to a fullerene skeleton, and (B) a solvent. The composition exhibits excellent etching resistance, causes an under layer film pattern to bend only with difficulty in a dry etching process, and can transfer a resist pattern faithfully onto a substrate to be processed with high reproducibility.
    Type: Application
    Filed: November 19, 2007
    Publication date: April 1, 2010
    Applicant: JSR CORPORATION
    Inventors: Nakaatsu Yoshimura, Yousuke Konno
  • Publication number: 20100028802
    Abstract: This invention provides a method for resist under layer film formation, which can form a resist under layer film which can function as an anti-reflection film, is excellent in pattern transfer properties and etching resistance, and does not cause bending of a pattern even in the transfer of a fined pattern, and a composition for the resist under layer film for use in the method, and a method for pattern formation. The method for resist under layer film formation comprises the steps of coating a composition for resist under layer film formation (for example, a composition comprising a compound having a phenolic hydroxyl group, a solvent, and an accelerator) onto a substrate to be processed, and treating the formed coating film under an oxidizing atmosphere having an oxygen concentration of not less than 1% by volume and a temperature of 300° C. or higher to form a resist under layer film.
    Type: Application
    Filed: September 18, 2007
    Publication date: February 4, 2010
    Applicant: JSR Corporation
    Inventors: Yousuke Konno, Nakaatsu Yoshimura, Fumihiro Toyokawa, Hikaru Sugita
  • Publication number: 20090149625
    Abstract: Sulfonated polyarylenes have excellent processability and methanol resistance. The polyarylene includes a structural unit (S) represented by Formula (2-2) below and a structural unit (T) represented by Formula (2-3) below, the structural unit (S) accounting for a proportion “s” of 95 to 50 mol %, the structural unit (T) accounting for a proportion “t” of 5 to 50 mol % (“s”+“t”=100 mol %): wherein each A independently represents a divalent linking group represented by —CO— or —SO2—; and R1 to R4 each independently represent a hydrogen atom, a fluorine atom, an alkyl group or an aryl group.
    Type: Application
    Filed: April 24, 2007
    Publication date: June 11, 2009
    Applicant: JSR CORPORATION
    Inventors: Yoshitaka Yamakawa, Yousuke Konno, Kohei Goto
  • Publication number: 20090098486
    Abstract: A composition for forming a lower layer film comprises a polymer (A) having a naphthalene derivative structural unit shown by the following formula (1), wherein R1 represents a hydroxyl group and the like, X represents a substitutable alkylene group having 1 to 20 carbon atoms and the like, n represents 0 to 6, m represents 1 to 8, and n+m represents an integer from 1 to 8, provided that two or more R1s may be the same or different and two or more Xs may be the same or different.
    Type: Application
    Filed: March 14, 2007
    Publication date: April 16, 2009
    Applicant: JSR CORPORATION
    Inventors: Nakaatsu Yoshimura, Yousuke Konno, Hikaru Sugita, Junichi Takahashi
  • Patent number: 7368068
    Abstract: The present invention provides a sulfonic group-containing polyarylene block copolymer superior to the perfluoroalkylsulfonic acid polymers in cost, conductive properties and proccessability, a process for producing the copolymer, a solid polymer electrolyte and a proton conductive membrane. The sulfonic group-containing polyarylene block copolymer includes a polymer segment with an ion conductive component represented by the formula (A) and at least one polymer segment without an ion conductive component represented by the formulae (B-1), (B-3) and the like and containing an aromatic ring bonded at the meta-positions or ortho-positions: wherein X is a single bond, —CO—, —SO2— or the like; W is a single bond, —CO—, —SO2— or the like; Q is a single bond, —O—, —S— or the like; J is a single bond, —CO—, —SO2— or the like; and R1 to R24 are each a hydrogen atom, a fluorine atom, an alkyl group or the like.
    Type: Grant
    Filed: August 29, 2005
    Date of Patent: May 6, 2008
    Assignee: JSR Corporation
    Inventors: Takashi Okada, Mayumi Shinoda, Kimihiko Yoshii, Yousuke Konno, Toshihiro Otsuki, Kohei Goto
  • Patent number: 7163988
    Abstract: Disclosed is an aromatic sulfonic acid ester derivative represented by the formula (1); in the formula, X is an atom or a group selected from a halogen atom excluding fluorine, —OSO3CH3 and —OSO3CF3, A is a divalent electron attractive group, B is a divalent electron donating group or a direct bonding, Ra is a hydrocarbon group of 1 to 20 carbon atoms, Ar is an aromatic group having a substituent of —SO3Rb (wherein Rb is a hydrocarbon group of 1 to 20 carbon atoms), m is an integer of 0 to 10, n is an integer of 0 to 10 and k is an integer of 1 to 4. Also disclosed is a process for producing a polyarylene having a sulfonic acid group, which process comprises the steps of coupling polymerization of an aromatic compound containing the derivative of the formula (1), to prepare a polyarylene and hydrolysis of the polyarylene, and which process has high safety and is easily capable of controlling the amount of sulfonoc acid group introduced into a polymer and the introducing position thereof.
    Type: Grant
    Filed: August 19, 2003
    Date of Patent: January 16, 2007
    Assignee: JSR Corporation
    Inventors: Igor Rozhanskii, Masayuki Takahashi, Kohei Goto, Yousuke Konno, Toshihiro Ohtsuki, Yoshitaka Yamakawa, Toshiaki Kadota
  • Publication number: 20060043344
    Abstract: The present invention provides a sulfonic group-containing polyarylene block copolymer superior to the perfluoroalkylsulfonic acid polymers in cost, conductive properties and processability, a process for producing the copolymer, a solid polymer electrolyte and a proton conductive membrane. The sulfonic group-containing polyarylene block copolymer includes a polymer segment with an ion conductive component represented by the formula (A) and at least one polymer segment without an ion conductive component represented by the formulae (B-1), (B-3) and the like and containing an aromatic ring bonded at the meta-positions or ortho-positions: wherein X is a single bond, —CO—, —SO2— or the like; W is a single bond, —CO—, —SO2— or the like; Q is a single bond, —O—, —S— or the like; J is a single bond, —CO—, —SO2— or the like; and R1 to R24 are each a hydrogen atom, a fluorine atom, an alkyl group or the like.
    Type: Application
    Filed: August 29, 2005
    Publication date: March 2, 2006
    Applicant: JSR Corporation
    Inventors: Takashi Okada, Mayumi Shinoda, Kimihiko Yoshii, Yousuke Konno, Toshihiro Otsuki, Kohei Goto
  • Publication number: 20040044166
    Abstract: Disclosed is an aromatic sulfonic acid ester derivative represented by the formula (1); 1
    Type: Application
    Filed: August 19, 2003
    Publication date: March 4, 2004
    Applicant: JSR Corporation
    Inventors: Igor Rozhanskii, Masayuki Takahashi, Kohei Goto, Yousuke Konno, Toshihiro Ohtsuki, Yoshitaka Yamakawa, Toshiaki Kadota