Patents by Inventor Yousuke Miyoshi

Yousuke Miyoshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11958385
    Abstract: A seat includes a seat body and a sensor configured to acquired information on an occupant seated on the seat body. The seat includes a coating as a location marker that marks a location of the sensor to render the location visually recognizable from outside the seat body.
    Type: Grant
    Filed: March 29, 2019
    Date of Patent: April 16, 2024
    Assignee: TS TECH CO., LTD.
    Inventors: Hiroyuki Kaku, Ryuichiro Hirose, Hiroyuki Numajiri, Satoshi Fujita, Takako Miyoshi, Munetaka Kowa, Atsushi Kusano, Yoshikazu Ito, Yousuke Higashi, Satoshi Suzuki, Ryosuke Sato, Kento Uetake, Yasuharu Otsuka, Satoru Kaneda
  • Patent number: 6661038
    Abstract: A semiconductor device of the present invention includes a systematic structure layer of first conductivity type and having a systematically arranged structure. The systematic structure layer is formed on a collector contact layer of first conductivity type, which is connected to collector electrodes. A compensation layer of first conductivity type is formed on the systematic structure layer. A collector layer of first conductivity type is formed on the compensation layer. A base layer is formed on the collector layer and connected to base electrodes. An emitter layer is formed on the base electrode and connected to an emitter electrode. The semiconductor device reduces collector resistance and thereby improves reliability.
    Type: Grant
    Filed: February 28, 2002
    Date of Patent: December 9, 2003
    Assignee: NEC Compound Semiconductor Devices, Ltd.
    Inventors: Kouji Azuma, Yousuke Miyoshi, Fumio Harima, Masahiro Tanomura, Hidenori Shimawaki
  • Publication number: 20020121675
    Abstract: A semiconductor device of the present invention includes a systematic structure layer of first conductivity type and having a systematically arranged structure. The systematic structure layer is formed on a collector contact layer of first conductivity type, which is connected to collector electrodes. A compensation layer of first conductivity type is formed on the systematic structure layer. A collector layer of first conductivity type is formed on the compensation layer. A base layer is formed on the collector layer and connected to base electrodes. An emitter layer is formed on the base electrode and connected to an emitter electrode. The semiconductor device reduces collector resistance and thereby improves reliability.
    Type: Application
    Filed: February 28, 2002
    Publication date: September 5, 2002
    Inventors: Kouji Azuma, Yousuke Miyoshi, Fumio Harima, Masahiro Tanomura, Hidenori Shimawaki