Patents by Inventor Yousun Kim Taylor

Yousun Kim Taylor has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dual doped polysilicon and silicon germanium etch
    Patent number: 7682985
    Abstract: A method for etching a stack with at least one silicon germanium layer over a substrate in a processing chamber is provided. A silicon germanium etch is provided. An etchant gas is provided into the processing chamber, wherein the etchant gas comprises HBr, an inert diluent, and at least one of O2 and N2. The substrate is cooled to a temperature below 40° C. The etching gas is transformed to a plasma to etch the silicon germanium layer.
    Type: Grant
    Filed: March 17, 2004
    Date of Patent: March 23, 2010
    Assignee: Lam Research Corporation
    Inventors: C. Robert Koemtzopoulos, Yoko Yamaguchi Adams, Yoshinori Miyamoto, Yousun Kim Taylor
  • Method and compositions for hardening photoresist in etching processes
    Patent number: 6923920
    Abstract: A method for etching a wafer having a pattern of photoresist material thereon is disclosed. The method includes curing the photoresist material with a bromine containing plasma. Then a main etch of the wafer is carried out. A method for curing a pattern of photoresist material on a wafer is also disclosed. The curing method includes providing a bromine containing plasma and exposing the photoresist material to the plasma, such that a layer of the wafer below the photoresist material is not etched through. A composition of a plasma for curing a photoresist material on a wafer in a high density plasma processing device includes bromine.
    Type: Grant
    Filed: August 14, 2002
    Date of Patent: August 2, 2005
    Assignee: Lam Research Corporation
    Inventors: Yousun Kim Taylor, Wendy Nguyen, Chris G. N. Lee
  • Method and compositions for hardening photoresist in etching processes
    Publication number: 20040079727
    Abstract: A method for etching a wafer having a pattern of photoresist material thereon is disclosed. The method includes curing the photoresist material with a bromine containing plasma. Then a main etch of the wafer is carried out. A method for curing a pattern of photoresist material on a wafer is also disclosed. The curing method includes providing a bromine containing plasma and exposing the photoresist material to the plasma, such that a layer of the wafer below the photoresist material is not etched through. A composition of a plasma for curing a photoresist material on a wafer in a high density plasma processing device includes bromine.
    Type: Application
    Filed: August 14, 2002
    Publication date: April 29, 2004
    Applicant: Lam Research Corporation
    Inventors: Yousun Kim Taylor, Wendy Nguyen, Chris G.N. Lee