Abstract: Measurement data sets for optical metrology systems can be processed in parallel using Multiple Tool and Structure Analysis (MTSA). In an MTSA procedure, at least one parameter that is common to the data sets can be coupled as a global parameter. Setting this parameter as global allows a regression on each data set to contain fewer fitting parameters, making the process is less complex, requiring less processing capacity, and providing more accurate results. MTSA can analyze multiple structures measured on a single tool, or a single structure measured on separate tools. For a multiple tool recipe, a minimized regression solution can be applied back to each tool to determine whether the recipe is optimized. If the recipe does not provide accurate results for each tool, search parameters and/or spaces can be modified in an iterative manner until an optimized solution is obtained that provides acceptable solutions on each tool.

Abstract: A standardized sample for scatterometry includes four quadrants each including an inner block surrounded by four outer blocks. A pattern of gratings is repeated within each of the blocks using different resolutions and orientations. Each grating within an outer block has a matching grating within the block's pair. A grating and its matching grating are negative images of each other—the pitch and line-size of a grating are equal, respectively to the line size and pitch of the matching grating. The inner block also includes a series of background patterns positioned behind the gratings. These patterns include repeating patterns of hole and repeating line structures. This series of structures cover a large die area, helping to simulate the conditions faced by real-world scatterometers. The various structures feature a high-degree of alignment, allowing rapid verification using SEM or other techniques.

Abstract: An optical metrology includes a library, a metrology tool and a library evolution tool. The library is generated to include a series of predicted measurements. Each predicted measurement is intended to match the measurements that a metrology device would record when analyzing a corresponding physical structure. The metrology tool compares its empirical measurements to the predicted measurements in the library. If a match is found, the metrology tool extracts a description of the corresponding physical structure from the library. The library evolution tool operates to improve the efficiency of the library. To make these improvements, the library evolution tool statistically analyzes the usage pattern of the library. Based on this analysis, the library evolution tool increases the resolution of commonly used portions of the library. The library evolution tool may also optionally reduce the resolution of less used portions of the library.

Abstract: An optical metrology includes a library, a metrology tool and a library evolution tool. The library is generated to include a series of predicted measurements. Each predicted measurement is intended to match the measurements that a metrology device would record when analyzing a corresponding physical structure. The metrology tool compares its empirical measurements to the predicted measurements in the library. If a match is found, the metrology tool extracts a description of the corresponding physical structure from the library. The library evolution tool operates to improve the efficiency of the library. To make these improvements, the library evolution tool statistically analyzes the usage pattern of the library. Based on this analysis, the library evolution tool increases the resolution of commonly used portions of the library. The library evolution tool may also optionally reduce the resolution of less used portions of the library.

Abstract: A standardized sample for scatterometry includes four quadrants each including an inner block surrounded by four outer blocks. A pattern of gratings is repeated within each of the blocks using different resolutions and orientations. Each grating within an outer block has a matching grating within the block's pair. A grating and its matching grating are negative images of each other—the pitch and line-size of a grating are equal, respectively to the line size and pitch of the matching grating. The inner block also includes a series of background patterns positioned behind the gratings. These patterns include repeating patterns of hole and repeating line structures. This series of structures cover a large die area, helping to simulate the conditions faced by real-world scatterometers. The various structures feature a high-degree of alignment, allowing rapid verification using SEM or other techniques.

Abstract: Systems and methods are disclosed for evaluating nitrogen levels in thin gate dielectric layers formed on semiconductor samples. In one embodiment, a tool is disclosed which includes both a narrow band ellipsometer and a broadband spectrometer for measuring the sample. The narrowband ellipsometer provides very accurate information about the thickness of the thin film layer while the broadband spectrometer contains information about the nitrogen levels. In another aspect of the subject invention, a thermal and/or plasma wave detection system is used to provide information about the nitrogen levels and nitration processes.

Abstract: Feed forward techniques can be used to improve optical metrology measurements for microelectronic devices. Metrology tools can be used to measure parameters such as critical dimension, profile, index of refraction, and thickness, as well as various material properties. Three-dimensional feature characterizations can be performed, from which parameters can be extracted and correlations executed. Process fingerprints on a wafer can be tracked after each process step, such that correlation between profile and structure parameters can be established and deviations from specification can be detected instantaneously. A “feed forward” approach allows information relating to dimensions, profiles, and layer thicknesses to be passed on to subsequent process steps. By retaining information from previous process steps, calculations such as profile determinations can be simplified by reducing the number of variables and degrees of freedom used in the calculation.

Abstract: Systems and methods are disclosed for, evaluating nitrogen levels in thin gate dielectric layers formed on semiconductor samples. In one embodiment, a tool is disclosed which includes both a narrow band ellipsometer and a broadband spectrometer for measuring the sample. The narrowband ellipsometer provides very accurate information about the thickness of the thin film layer while the broadband spectrometer contains information about the nitrogen levels. In another aspect of the subject invention, a thermal and/or plasma wave detection system is used to provide information about the nitrogen levels and nitration processes.

Abstract: A method for modeling samples includes the use of control points to define lines profiles and other geometric shapes. Each control point used within a model influences a shape within the model. Typically, the control points are used in a connect-the-dots fashion where a set of dots defines the outline or profile of a shape. The layers within the sample are typically modeled independently of the shape defined using the control points. The overall result is to minimize the number of parameters used to model shapes while maintaining the accuracy of the resulting scatterometry models.

Abstract: A system is disclosed for evaluating nitrogen levels in thin gate dielectric layers formed on semiconductor samples. In one embodiment, a tool is disclosed which includes both a narrow band ellipsometer and a broadband spectrometer for measuring the sample. The narrowband ellipsometer provides very accurate information about the thickness of the thin film layer while the broadband spectrometer contains information about the nitrogen levels. In another aspect of the subject invention, a thermal and/or plasma wave detection system is used to provide information about the nitrogen levels and nitration processes.

Abstract: A system is disclosed for evaluating nitrogen levels in thin gate dielectric layers formed on semiconductor samples. In one embodiment, a tool is disclosed which includes both a narrow band ellipsometer and a broadband spectrometer for measuring the sample. The narrowband ellipsometer provides very accurate information about the thickness of the thin film layer while the broadband spectrometer contains information about the nitrogen levels. In another aspect of the subject invention, a thermal and/or plasma wave detection system is used to provide information about the nitrogen levels and nitration processes.

Abstract: A system is disclosed for evaluating nitrogen levels in thin gate dielectric layers formed on semiconductor samples. In one embodiment, a tool is disclosed which includes both a narrow band ellipsometer and a broadband spectrometer for measuring the sample. The narrowband ellipsometer provides very accurate information about the thickness of the thin film layer while the broadband spectrometer contains information about the nitrogen levels. In another aspect of the subject invention, a thermal and/or plasma wave detection system is used to provide information about the nitrogen levels and nitration processes.

Abstract: An optical metrology includes a library, a metrology tool and a library evolution tool. The library is generated to include a series of predicted measurements. Each predicted measurement is intended to match the measurements that a metrology device would record when analyzing a corresponding physical structure. The metrology tool compares its empirical measurements to the predicted measurements in the library. If a match is found, the metrology tool extracts a description of the corresponding physical structure from the library. The library evolution tool operates to improve the efficiency of the library. To make these improvements, the library evolution tool statistically analyzes the usage pattern of the library. Based on this analysis, the library evolution tool increases the resolution of commonly used portions of the library. The library evolution tool may also optionally reduce the resolution of less used portions of the library.

Abstract: A system is disclosed for evaluating nitrogen levels in thin gate dielectric layers formed on semiconductor samples. In one embodiment, a tool is disclosed which includes both a narrow band ellipsometer and a broadband spectrometer for measuring the sample. The narrowband ellipsometer provides very accurate information about the thickness of the thin film layer while the broadband spectrometer contains information about the nitrogen levels. In another aspect of the subject invention, a thermal and/or plasma wave detection system is used to provide information about the nitrogen levels and nitration processes.

Abstract: The subject invention relates to an approach for analyzing etched semiconductor samples using optical measurements. In use, one or more optical measurements are taken on an etched semiconductor wafer. At least one of the measurements includes a range of reflectivity measurements in the visible light region. The average reflectivities in the blue and red visible regions are compared to provide information as to whether the sample has been over or under etched. Once this determination is made, a more accurate analysis can be made of the exact structure of the sample. This approach overcomes the difficulties associated with attempting to analyze a sample where the data must be analyzed without knowledge of whether the sample has been over or under etched. The subject approach can also be utilized in other situations which require the treatment of an upper layer of a sample.