Patents by Inventor Youxing XIONG

Youxing XIONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Insulated gate bipolar transistor physical model
    Patent number: 11875869
    Abstract: An IGBT physical model parameter extraction method includes obtaining an initial value and a transformation range of an IGBT physical model parameter; and correcting a model parameter by means of a correspondence between IGBT dynamic and static features and the IGBT physical model parameter and in combination with an experiment measurement result of the IGBT physical model parameter.
    Type: Grant
    Filed: November 17, 2021
    Date of Patent: January 16, 2024
    Assignee: NAVAL UNIVERSITY OF ENGINEERING
    Inventors: Yifei Luo, Fei Xiao, Binli Liu, Yongle Huang, Xin Li, Yingjie Jia, Jing Pu, Youxing Xiong
  • INSULATED GATE BIPOLAR TRANSISTOR PHYSICAL MODEL PARAMETER EXTRACTION METHOD
    Publication number: 20220076777
    Abstract: An IGBT physical model parameter extraction method includes obtaining an initial value and a transformation range of an IGBT physical model parameter; and correcting a model parameter by means of a correspondence between IGBT dynamic and static features and the IGBT physical model parameter and in combination with an experiment measurement result of the IGBT physical model parameter.
    Type: Application
    Filed: November 17, 2021
    Publication date: March 10, 2022
    Inventors: Yifei LUO, Fei XIAO, Binli LIU, Yongle HUANG, Xin LI, Yingjie JIA, Jing PU, Youxing XIONG