Patents by Inventor Youyuan HU

Youyuan HU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190081123
    Abstract: The present disclosure relates to an organic light emitting diode (OLED) display panel, an OLED display and an OLED unit. The OLED display panel includes: a scan line, extending along a first direction; a data line, extending along a second direction perpendicular to the first direction; an OLED unit, including a first electrode, a second electrode, and an organic light emitting layer formed between the first electrode and the second electrode; and a heat conducting layer, formed of an insulating heat conduction material and connected to the scan line, the data line, and the first electrode in the OLED unit.
    Type: Application
    Filed: September 28, 2017
    Publication date: March 14, 2019
    Applicants: BOE TECHNOLOGY GROUP CO., LTD., Hefei Xinsheng Optoelectronics Technology Co., Ltd
    Inventors: Xinfeng WU, Mengyu LUAN, Youyuan HU, Fei LI, Xinzhu WANG, Huihui LI
  • Publication number: 20190061380
    Abstract: The present disclosure is related to a liquid dispensing amount control apparatus. The liquid dispensing amount control apparatus may include at least one nozzle and at least one heating device. The heating device may be configured to heat a position of liquid dispensed from the nozzle to form a droplet.
    Type: Application
    Filed: September 5, 2018
    Publication date: February 28, 2019
    Applicants: BOE TECHNOLOGY GROUP CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Mengyu Luan, Youyuan Hu, Xinfeng Wu, Lin Chen, Bo Mao, Fei Li, Xinzhu Wang, Huihui Li
  • Publication number: 20160118239
    Abstract: The present disclosure provides A gate insulating layer comprising: a first silicon nitride film having a first thickness and a first content of N—H bonds; a second silicon nitride film having a second thickness and a second content of N—H bonds, disposed on the first silicon nitride film; and a third silicon nitride film having a third thickness and a third content of N—H bonds, disposed on the second silicon nitride film; wherein both the first thickness and the third thickness are less than the second thickness, both the N—H bonds in the first content and the third content are less than that in the second N—H bonds content, and a difference of the N—H bonds between the third content and the first content is no less than 5%. The present disclosure also provides a method for forming the above gate insulating layer.
    Type: Application
    Filed: January 6, 2016
    Publication date: April 28, 2016
    Inventors: Wei-ting CHEN, Chia-chi HUANG, Chunchieh HUANG, Youyuan HU
  • Publication number: 20150129989
    Abstract: The present disclosure provides A gate insulating layer comprising: a first silicon nitride film having a first thickness and a first content of N—H bonds; a second silicon nitride film having a second thickness and a second content of N—H bonds, disposed on the first silicon nitride film; and a third silicon nitride film having a third thickness and a third content of N—H bonds, disposed on the second silicon nitride film; wherein both the first thickness and the third thickness are less than the second thickness, both the N—H bonds in the first content and the third content are less than that in the second N—H bonds content, and a difference of the N—H bonds between the third content and the first content is no less than 5%. The present disclosure also provides a method for forming the above gate insulating layer.
    Type: Application
    Filed: August 19, 2014
    Publication date: May 14, 2015
    Inventors: Wei-ting CHEN, Chia-chi HUANG, Chunchieh HUANG, Youyuan HU