Patents by Inventor Yow-Shiuan LIU

Yow-Shiuan LIU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11569121
    Abstract: Methods of forming semiconductor devices are provided. The methods include: forming a trench in a substrate, wherein the trench includes a defect protruding from a bottom surface of the trench; forming a flowable material on the substrate to at least partially cover the defect; performing an etching process to reduce the height of the defect; and removing the flowable material.
    Type: Grant
    Filed: May 26, 2021
    Date of Patent: January 31, 2023
    Assignee: Vanguard International Semiconductor Corporation
    Inventors: I-Ping Lee, Kwang-Ming Lin, Chih-Cherng Liao, Ya-Huei Kuo, Pei-Yu Chang, Ya-Ting Chang, Tsung-Hsiung Lee, Zheng-Xian Wu, Kai-Chuan Kan, Yu-Jui Chang, Yow-Shiuan Liu
  • Publication number: 20220384251
    Abstract: Methods of forming semiconductor devices are provided. The methods include: forming a trench in a substrate, wherein the trench includes a defect protruding from a bottom surface of the trench; forming a flowable material on the substrate to at least partially cover the defect; performing an etching process to reduce the height of the defect; and removing the flowable material.
    Type: Application
    Filed: May 26, 2021
    Publication date: December 1, 2022
    Applicant: Vanguard International Semiconductor Corporation
    Inventors: I-Ping LEE, Kwang-Ming LIN, Chih-Cherng LIAO, Ya-Huei KUO, Pei-Yu CHANG, Ya-Ting CHANG, Tsung-Hsiung LEE, Zheng-Xian WU, Kai-Chuan KAN, Yu-Jui CHANG, Yow-Shiuan LIU