Patents by Inventor Ytshak Avrahami

Ytshak Avrahami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7479696
    Abstract: A tunable microwave device includes a SOI structure. A buffer layer is formed on the SOI structure. A microwave film layer is formed on the buffer layer. The microwave film layer comprises BST related materials.
    Type: Grant
    Filed: August 26, 2005
    Date of Patent: January 20, 2009
    Assignee: Massachusetts Institute of Technology
    Inventors: Il-Doo Kim, Ytshak Avrahami, Harry L. Tuller
  • Patent number: 7402853
    Abstract: A BST microwave device includes a substrate and an insulating layer that is formed on the substrate. A buffer layer is formed on the insulating layer. A BST layer is formed on the buffer layer with a selected orientation for high tunability and possesses a low loss in a wavelength of interest.
    Type: Grant
    Filed: September 19, 2005
    Date of Patent: July 22, 2008
    Assignee: Massachusetts Institute of Technology
    Inventors: Il-Doo Kim, Ytshak Avrahami, Harry L. Tuller
  • Publication number: 20070147752
    Abstract: In general, in one aspect, the invention features methods that include guiding radiation at a first wavelength, ?1, through a core of a photonic crystal fiber and guiding radiation at a second wavelength, ?2, through the photonic crystal fiber, wherein |?1??2|>100 nm.
    Type: Application
    Filed: June 9, 2006
    Publication date: June 28, 2007
    Inventors: Ori Weisberg, Gregor Dellemann, Uri Kolodny, David Torres, Charalambos Anastassiou, Steven Jacobs, Gil Shapira, Burak Temelkuran, Aaron Micetich, Rokan Ahmad, Ytshak Avrahami, Yelena Kann, Max Shurgalin, Yoel Fink, Tairan Wang
  • Patent number: 7142760
    Abstract: An optical structure is provided. The optical structure includes a substrate having a surface. A modified barium titanate is deposited on the surface of the substrate.
    Type: Grant
    Filed: August 22, 2003
    Date of Patent: November 28, 2006
    Assignee: Massachusetts Institute of Technology
    Inventors: Harry L. Tuller, Ytshak Avrahami
  • Publication number: 20060082423
    Abstract: A tunable microwave device includes a SOI structure. A buffer layer is formed on the SOI structure. A microwave film layer is formed on the buffer layer. The microwave film layer comprises BST related materials.
    Type: Application
    Filed: August 26, 2005
    Publication date: April 20, 2006
    Inventors: Il-Doo Kim, Ytshak Avrahami, Harry Tuller
  • Publication number: 20060068560
    Abstract: A BST microwave device includes a substrate and an insulating layer that is formed on the substrate. A buffer layer is formed on the insulating layer. A BST layer is formed on the buffer layer with a selected orientation for high tunability and possesses a low loss in a wavelength of interest.
    Type: Application
    Filed: September 19, 2005
    Publication date: March 30, 2006
    Inventors: Il-Doo Kim, Ytshak Avrahami, Harry Tuller
  • Patent number: 7006289
    Abstract: An optical isolator is provided. The optical isolator includes a substrate and a thin film is formed comprising of iron oxide or magnetic persovskite-type material having a high Faraday rotation.
    Type: Grant
    Filed: September 4, 2003
    Date of Patent: February 28, 2006
    Assignee: Massachuesetts Institute of Technology
    Inventors: Caroline A. Ross, Tamar Tepper, Ytshak Avrahami
  • Publication number: 20040264909
    Abstract: An optical structure is provided. The optical structure includes a substrate having a surface. A modified barium titanate is deposited on the surface of the substrate.
    Type: Application
    Filed: August 22, 2003
    Publication date: December 30, 2004
    Inventors: Harry L. Tuller, Ytshak Avrahami
  • Publication number: 20040114233
    Abstract: An optical isolator is provided. The optical isolator includes a substrate and a thin film is formed comprising of iron oxide or magnetic persovskite-type material having a high Faraday rotation.
    Type: Application
    Filed: September 4, 2003
    Publication date: June 17, 2004
    Inventors: Caroline A. Ross, Tamar Tepper, Ytshak Avrahami
  • Patent number: 6526833
    Abstract: A piezoelectric transducer includes a barium-titanate-based piezoelectric material having a poled, rhombohedral structure. The rhombohedral barium titanate structure can include a dopant, such as KNbO3, BaHfO3, BaSnO3, BaZrO3 or KTaO3. The piezoelectric transducer can be used either as an actuator or as a sensor.
    Type: Grant
    Filed: March 13, 2000
    Date of Patent: March 4, 2003
    Assignee: Massachusetts Institute of Technology
    Inventors: Ytshak Avrahami, Harry L. Tuller