Abstract: The invention provides nucleic acids, collections of nucleic acids, supports, assay kits, and methods for the sensitive and specific detection of microorganisms in a foodstuff. The nucleic acid comprises a nucleotide sequence selected from the group consisting of SEQ ID NOs: 1-15 and having a length of no more than 35 nucleotides.

Abstract: A mounting structure for a semiconductor device is formed to include a stepwise stress buffer layer under a stepwise UBM structure.

Abstract: A retaining ring configuration system is disclosed. In one embodiment, the system includes a set of adjustment apparatuses configured to contact a portion of a generator rotor, each of the set of adjustment apparatuses including: a base member for contacting the portion of the generator rotor; an adjustment member for adjusting a position of the generator retaining ring relative to the generator rotor; and an actuation member coupled to the base member and operably attached to the adjustment member, the actuation member for actuating movement of the adjustment member to adjust the position of the generator retaining ring relative to the generator rotor.

Abstract: A method of forming a light-emitting device (LED) package component includes providing a substrate; forming an LED on the substrate; and lifting the LED off the substrate. A carrier wafer is provided, which includes a through-substrate via (TSV) configured to electrically connecting features on opposite sides of the carrier wafer. The LED is bonded onto the carrier wafer, with the LED electrically connected to the TSV.

Abstract: A semiconductor device, an electrostatic discharge protection device and manufacturing method thereof are provided. The electrostatic discharge protection device includes a gate, a gate dielectric layer, an N-type source region, an N-type drain region, an N-type doped region and a P-type doped region. The gate dielectric layer is disposed on a substrate. The gate is disposed on the gate dielectric layer. The N-type source region and the N-type drain region are disposed in the substrate at two sides of the gate, respectively. The N-type doped region is disposed in the N-type drain region and connects to the top of the N-type drain region. The P-type doped region is disposed under the N-type drain region and connects to the bottom of the N-type drain region.

Abstract: A parameter setting circuit and method for an integrated circuit apply a pulse current to a pin of the integrated circuit during a programming mode of the integrated circuit, and then extract the difference between the voltage on the pin and the DC component of the voltage on the pin to determine a setting signal for parameter setting to an internal circuit of the integrated circuit. By this way, an input pin, an output pin or an input/output pin of the integrated circuit may be used as the pin implementing the parameter setting function.

Abstract: A method of forming a p-type semiconductor device is provided, which in one embodiment employs an aluminum containing threshold voltage shift layer to produce a threshold voltage shift towards the valence band of the p-type semiconductor device. The method of forming the p-type semiconductor device may include forming a gate structure on a substrate, in which the gate structure includes a gate dielectric layer in contact with the substrate, an aluminum containing threshold voltage shift layer present on the gate dielectric layer, and a metal containing layer in contact with at least one of the aluminum containing threshold voltage shift layer and the gate dielectric layer. P-type source and drain regions may be formed in the substrate adjacent to the portion of the substrate on which the gate structure is present. A p-type semiconductor device provided by the above-described method is also provided.

Abstract: A method for forming boron oxide films formed using reactive sputtering. The boron oxide films are candidates as an anti-reflection coating. Boron oxide films with a refractive index of about 1.38 can be formed. The boron oxide films can be formed using power densities between 2 W/cm2 and 11 W/cm2 applied to the target. The oxygen in the reactive sputtering atmosphere can be between 40 volume % and 90 volume %.

Abstract: The disclosure provides a method for fabricating a semiconductor layer having a textured surface, including: (a) providing a textured substrate; (b) forming at least one semiconductor layer on the textured substrate; (c) forming a metal layer on the semiconductor layer; and (d) conducting a thermal process or a low temperature process to the textured substrate, the semiconductor layer and the metal layer, wherein the semiconductor layer is separated from the textured substrate by the thermal process to obtain the semiconductor layer having the metal layer and a textured surface.

Abstract: Interposers for semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, an interposer includes a substrate, a contact pad disposed on the substrate, and a first through-via in the substrate coupled to the contact pad. A first fuse is coupled to the first through-via. A second through-via in the substrate is coupled to the contact pad, and a second fuse is coupled to the second through-via.

Abstract: The invention provides an entrusted-authorization system and an entrusted-authorization method. The entrusted-authorization system comprises an accounting system, a switch module and an entrusted-authorization module, wherein the entrusted-authorization module stores entrusted-authorization parameters determined by the accounting system, the switch module is connected with the accounting system and the entrusted-authorization module for transmitting transaction request messages from the client terminal to the entrusted-authorization module for processing in case that the accounting system is unavailable, wherein the entrusted-authorization module verifies the transaction request messages according to the entrusted-authorization parameters; otherwise, the messages are sent to the accounting system for processing. The transaction request messages comprise financial account information, financial mechanism information, transaction initiation mechanism information and transaction amount.

Abstract: A smart touch set-top box device comprises a touch screen, a LCD, a microprocessor, a television signal processing unit, a speaker, a wireless communication unit and an Ethernet communication unit, wherein the touch screen is arranged on the front end of said LCD for detecting the touch location of a user and transmitting a touch sensing signal to said microprocessor, the microprocessor is used for converting said touch sensing signal to operational order, controlling said television signal processing unit to communicatively connect with external device by driving said wireless communication unit or Ethernet communication unit, thereby realizing the synchronously play of audio and video signal on multi-screens. A smart network multimedia playing system sends wireless signal by mobile terminal to control the operation of said set-top box, thereby realizing the synchronously play of audio and video data on the own device of the set-top box and external television.

Abstract: Tubulysins are a series of naturally occurring cytotoxic agents that are of interest as anticancer therapeutic agents. Processes and intermediates useful for preparing naturally occurring and non-naturally occurring tubulysins and analogs and derivatives thereof are described.

Abstract: A backlight module includes a light guide plate with at least one light incident surface, and a light source structure arranged at a side of the light guide plate. The light source structure includes a reflection cover and at least one light emitting module. At least one positioning pin is arranged on the reflection cover. The at least one light emitting module is installed on the reflection cover and corresponding to the at least one light incident surface. The at least one light emitting module is fixed on the positioning pin in a rotatable manner, such that the at least one light emitting module can rotate around the positioning pin as an axis when the reflection cover is combined with the light guide plate, so as to allow the at least one light emitting module facing the at least one light incident surface.

Abstract: A semiconductor device wafer includes a test structure. The test structure includes a layer of material having an angle-shaped test portion disposed on at least a portion of a surface of the semiconductor wafer. A ruler marking on the surface of the semiconductor wafer proximate the test portion is adapted to facilitate measurement of a change in length of the test portion.

Abstract: An interposer includes a first surface on a first side of the interposer and a second surface on a second side of the interposer, wherein the first and the second sides are opposite sides. A first probe pad is disposed at the first surface. An electrical connector is disposed at the first surface, wherein the electrical connector is configured to be used for bonding. A through-via is disposed in the interposer. Front-side connections are disposed on the first side of the interposer, wherein the front-side connections electrically couple the through-via to the probe pad.

Abstract: A pixel circuit relating to an organic light emitting diode (OLED) is provided by the invention, and if the circuit configuration (5T1C or 6T1C) thereof collaborates with suitable operation waveforms, the current flowing through an OLED in the OLED pixel circuit is not be changed along with variation of a power supply voltage (Vdd) influenced by the IR drop, and is not be varied along with the threshold voltage (Vth) shift of a TFT used for driving the OLED. Accordingly, the brightness uniformity of the applied OLED display can be substantially improved.

Abstract: A wafer level package includes a semiconductor die bonded on a supporting wafer. The semiconductor die has at least a step recess at its substrate. An underfill layer is formed between the semiconductor die and the supporting wafer. Moreover, the height of the underfill layer is limited by the step recess. During a fabrication process of the wafer level package, the step recess helps to reduce the stress on the wafer level package.

Abstract: A dispersive element is disclosed which is designed to receive incident light (1) and disperse the incident light (1) into multiple spatially separated wavelengths of light. The dispersive body (DB) comprises a collimation cavity (COLL) to collimate the incident light (1), at least two optical interfaces (PRIS) to receive and disperse the collimated light (2) and a collection cavity (CLCT) to collect the dispersed light (3) from the at least two dispersive interfaces (op1, op2) and to focus the collected light (4).

Abstract: A keyboard applied to an electronic device, includes a main body, a connecting panel, and at least one fixing member. The connecting panel and the main body are fastened together by the at least one fixing member. An electronic device using the keyboard is also provided.