Abstract: Embodiments are directed to a method for minimizing electrostatic charges in a semiconductor substrate. The method includes depositing photoresist on a semiconductor substrate to form a photoresist layer on the semiconductor substrate. The photoresist layer is exposed to radiation. The photoresist layer is developed using a developer solution. The semiconductor substrate is cleaned with a first cleaning liquid to wash the developer solution from the photoresist layer. A tetramethylammonium hydroxide (TMAH) solution is applied to the semiconductor substrate to reduce charges accumulated in the semiconductor substrate.

Abstract: A package structure and method of manufacturing a package structure are provided. The package structure includes two semiconductor structures and two bonding layers sandwiched between both semiconductor structures. Each bonding layer has a plurality of bonding pads separated by an isolation layer. Each bonding pad has a bonding surface including a bonding region and at least one buffer region. The bonding regions in both bonding layers bond to each other. The buffer region of one semiconductor structure bonds to the isolation layer of the other semiconductor structure. Each first bonding pad has a front cross-section with a length greater than a length of a front cross-section of each second bonding pads; and each second bonding pads has a side cross-section with a length greater than a length of a front cross-section of each first bonding pad.

Abstract: A semiconductor package includes: a base substrate structure; and a plurality of die groups disposed on a top surface of the based substrate structure, the plurality of die groups comprising a first die group and a second die group neighboring to each other. The first die group includes a plurality of first dies stacked parallel to each other and parallel to a front surface of the first die group, the front surface of the first die group and the top surface intersect at a first edge extending in a first direction. The second die group includes a plurality of second dies stacked parallel to each other and parallel to a front surface of the second die group, the front surface of the second die group and the top surface intersect at a second edge extending in a second direction not parallel to the first direction.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a first substrate. The first substrate includes a first dielectric layer, and a vertical conductive area, where the vertical conductive area includes one or more vertical conductive structures extending through the first dielectric layer, where each line segment of a non-square quadrilateral contacts at least one of the one or more vertical conductive structures. The vertical conductive area also includes a continuous conductive guard ring structure in the first dielectric layer, where the continuous conductive guard ring structure surrounds the one or more vertical conductive structures. The semiconductor device also includes a second substrate, including a first conductor, and a second conductor, where the first conductor of the second substrate is electrically connected to at least one of the vertical conductive structures of the first substrate.

Abstract: A slide rail assembly includes a first rail, a second rail, an elastic member, a movable member and an electronic module. The second rail is movable relative to the first rail. When the second rail is located at a retracted position relative to the first rail and when the movable member is in a locking state, the elastic member is configured to be locked to accumulate the elastic force. The electronic module includes a driving device configured to drive the movable member to switch from the locking state to an unlocking state, in order to release the elastic force of the elastic member, such that the second rail is moved from the retracted position along an opening direction relative to the first rail in response to the elastic force of the elastic member.

Abstract: The present disclosure relates to use of 10?(Z), 13?(E), 15?(E)-Heptadecatrienyl hydroquinone compound (hereafter “HQ17(3)”) represented by the following Formula (12), a pharmaceutically acceptable salt, and/or a solvate and/or a hydrate thereof, and a pharmaceutical composition comprising the above compound, in treating coronavirus infection and diseases caused by the infection, especially SARS-COV-2 infection.

Abstract: Gate isolation processes (e.g., gate-to-source/drain contact isolation) are described herein. An exemplary contact gate isolation process may include recessing (e.g., by etching) sidewall portions of a high-k gate dielectric and gate spacers of a gate structure to form a contact gate isolation (CGI) opening that exposes sidewalls of a gate electrode of the gate structure, forming a gate isolation liner along the sidewalls of the gate electrode that partially fills the CGI opening, and forming a gate isolation layer over the gate isolation liner that fills a remainder of the CGI opening. A dielectric constant of the gate isolation liner is less than a dielectric constant of the high-k gate dielectric. A dielectric constant of the gate isolation layer is less than a dielectric constant of the high-k gate dielectric. A dielectric constant of the gate isolation layer may be less than a dielectric constant of the gate isolation layer.

Abstract: A wafer processing method is provided. The method includes a device providing step, a first lifting step, a wafer placing step, a second lifting step, a soaking step, and a third lifting steps, and a spinning cleaning step. The device providing step includes providing a multifunctional single wafer immersion and spin cleaning device, the device has a spin drive device, a wafer turntable, and a wafer receiving tray. A soaking tank is formed on the wafer receiving tray, and a watertight contact gasket is disposed on the wafer receiving tray to contact the wafer water-tightly such that in the soaking step, an appropriate water level of the liquid medicine can be accumulated to fully soak the wafer.

Abstract: A semiconductor processing system includes a first semiconductor processing site and a second semiconductor processing site. The system includes an unmanned electric vehicle configured to carry a portable cleanroom stocker between the first and second semiconductor processing sites. The portable cleanroom stocker is configured to maintain cleanroom conditions within the portable cleanroom stocker during transportation.

Abstract: A semiconductor device includes a first semiconductor die that operates at a first power, a second semiconductor die that is formed in a stack on the first semiconductor die and operates at a second power different than the first power, and a power management semiconductor die that is formed in the stack and provides the first power to the first semiconductor die through a first via and provides the second power to the second semiconductor die through a second via.

Abstract: A transport container includes a body. The transport container further includes a first securing mechanism coupled to the body. The first securing mechanism is configured to couple the body to a second securing mechanism of an attachment point. The transport container further includes a controller configured to receive a request for coupling. The controller is configured to authenticate the request for coupling responsive to receiving the request for coupling. The controller is further configured to, responsive to authenticating the request for coupling, initiate coupling between the first securing mechanism and the second securing mechanism. The coupling includes locking a first locking structure of the first securing mechanism to a first attachment structure of the second securing mechanism.

Abstract: A semiconductor package includes a first connection die including a semiconductor substrate and an interconnect structure, and a first die stack disposed on the first connection die and including stacked dies, each of the stacked dies including a semiconductor substrate and an interconnect structure including a first connection line that is electrically connected to the interconnect structure of the first connection die. An angle formed between a plane of the first connection die and a plane of each stacked die ranges from about 45° to about 90°.

Abstract: A software developer proxy tool accesses microservice applications for a software development project by connecting the developer proxy tool to a common port on a computer network. The tool implements software and hardware to register a plurality of the microservice applications on connection ports that connect to the developer proxy tool at an address for the common port. Data requests among the microservices are handled by the developer proxy tool via the common port. The tool sequentially queries selected microservice applications on the respective connection ports to determine availability for completing a request. The tool receives responses back from microservices and directs the responses back to the requesting program. Failed requests trigger use of remote or third party microservice applications that may be available over an internet connection.

Abstract: A plating apparatus for electroplating a wafer includes a housing defining a plating chamber for housing a plating solution. A voltage source of the apparatus has a first terminal having a first polarity and a second terminal having a second polarity different than the first polarity. The first terminal is electrically coupled to the wafer. An anode is within the plating chamber, and the second terminal is electrically coupled to the anode. A membrane support is within the plating chamber and over the anode. The membrane support defines apertures, wherein in a first zone of the membrane support a first aperture-area to surface-area ratio is a first ratio, and in a second zone of the membrane support a second aperture-area to surface-area ratio is a second ratio, different than the first ratio.