Abstract: Presented are thermal management systems using coolant flow distribution plates for immersion cooling of battery cells, methods for making/using such systems, and vehicles equipped with such systems for cooling the vehicles' battery packs. A battery assembly includes multiple battery cells arranged in adjacent, mutually parallel cell rows. The battery cells are stored inside a protective battery housing that includes inlet and outlet fluid ports for receiving and evacuating therethrough dielectric coolant fluid. A pair of (first and second) separator plates is located between each neighboring pair of cell rows. Each plate includes coolant channels that are arranged in mutually parallel channel bands. The separator plates are in face-to-face contact with each other such that each channel band of the first separator plate is aligned with a respective channel band of the second plate so the coolant channels cooperatively distribute coolant fluid onto and vertically upward between the battery cells.

Abstract: An auxiliary assessment method for cardiac function performed by a computing unit includes collecting a number of heartbeats and an amount of movement of a subject in a period of time; and calculating a distance per beat to assess cardiac function of the subject. The distance per beat is defined by dividing the amount of movement by the number of heartbeats. A length of the period of time is defined between at least two adjacent heartbeats. The amount of movement corresponds to a cumulative amount of movement in the period of time.

Abstract: Synthetic amino acid-modified polymers and methods of making the same and using the same are disclosed. The synthetic amino acid-modified polymers possess distinct thermosensitive, improved water-erosion resistant, and enhanced mechanical properties, and are suitable of reducing or preventing formation of postoperative tissue adhesions. Additionally, the amino acid-modified polymers can also be used as a vector to deliver pharmaceutically active agents.

Abstract: An optical path correction subassembly, an optical detection assembly, and an optical detection system are provided. The optical path correction subassembly can be optionally configured to be applied to a light detector. The optical path correction subassembly includes a holder structure and an optical path correction structure carried by the holder structure, and the optical path correction structure has a light beam guiding surface arranged as a reverse inclination inclined relative to a vertical line. The light beam guiding surface of the optical path correction structure can be configured to effectively or accurately guide a predetermined light beam to a light receiving surface of the light detector so as to facilitate collection of the predetermined light beam. The light beam guiding surface of the optical path correction structure can be arranged at an acute angle relative to the light receiving surface of the light detector.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a redistribution layer (RDL) module, a first semiconductor module, an interconnection module, a second semiconductor module and a molding material. The first semiconductor module is disposed on the RDL module. The interconnection module is disposed on the RDL module. The second semiconductor module is disposed on the interconnection module. The molding material covers the RDL module and surrounds the first semiconductor module and the second semiconductor module. A top surface of the first semiconductor module and a top surface of the second semiconductor module are exposed by the molding material.

Abstract: An over-current protection device includes a heat-sensitive layer and an electrode layer. The electrode layer includes a top metal layer and a bottom metal layer, and the heat-sensitive layer attached therebetween. The heat-sensitive layer exhibits a positive temperature coefficient (PTC) characteristic and includes a polymer matrix and a conductive filler. The polymer matrix includes a polyolefin-based homopolymer and a polyolefin-based copolymer. The polyolefin-based homopolymer has a first coefficient of thermal expansion (CTE), and the polyolefin-based copolymer has a second CTE lower than the first CTE. The polyolefin-based homopolymer and the polyolefin-based copolymer together form an interpenetrating polymer network (IPN).

Abstract: A diagnostic system applied to an electronic equipment with a plurality of hardware devices is provided. The hardware devices include a display and a processor, the diagnostic system is executed by the processor to diagnose the hardware devices. The diagnostic system includes a diagnostic test interface, which is displayed on the display and includes a plurality of hardware items corresponding to the hardware devices. Each of the hardware items links to the hardware devices. When at least one of the hardware items is triggered, the processor executes the diagnostic item of the hardware device corresponding to the triggered hardware item.

Abstract: A surface light emitting element with high heat dissipation and uniform light emission includes a metal reflective layer, a first metal conductive layer, an omnidirectional reflecting current isolation layer, a first-type semiconductor current spreading layer, a light emitting diode layer, a second-type semiconductor current spreading layer and a second metal conductive layer. The metal reflective layer includes at least one surrounding wall structure. The omnidirectional reflecting current isolation layer is arranged on the metal reflective layer and entirely covers the two sides of the at least one surrounding wall structure to form at least one cylindrical channel. The light emitting diode layer is located in the at least one cylindrical channel.

Abstract: An over-current protection device includes first and second electrode layers and a PTC material layer laminated therebetween. The PTC material layer includes a polymer matrix, a conductive filler, and a titanium-containing dielectric filler. The polymer matrix has a fluoropolymer. The titanium-containing dielectric filler has a compound represented by a general formula of MTiO3, wherein the M represents transition metal or alkaline earth metal. The total volume of the PTC material layer is calculated as 100%, and the titanium-containing dielectric filler accounts to for 5-15% by volume of the PTC material layer.

Abstract: A power converter having a high-side driving mechanism consuming low power is provided. A first terminal of a high-side switch is coupled to an input voltage. A second terminal of the high-side switch is connected to a first terminal of a low-side switch. A second terminal of the low-side switch is grounded. A first terminal of a bootstrap capacitor is connected to a node between the second terminal of the high-side switch and the first terminal of the low-side switch. A second terminal of the bootstrap capacitor is connected to a charging circuit. The charging circuit charges the bootstrap capacitor and detects data of the bootstrap capacitor. The charging circuit, according to the detected data of the bootstrap capacitor, determines whether or not to stop charging the bootstrap capacitor or to adjust charging of the bootstrap capacitor.

Abstract: The invention provides a layout pattern of static random access memory (SRAM), which at least comprises a plurality of gate structures located on a substrate and spanning the plurality of fin structures to form a plurality of transistors distributed on the substrate, wherein the plurality of transistors comprise two pull-up transistors (PU), two pull-down transistors (PD) to form a latch circuit, and two access transistors (PG) connected to the latch circuit. In each SRAM memory cell, the fin structure included in the pull-up transistor (PU) is defined as a PU fin structure, the fin structure included in the pull-down transistor (PD) is defined as a PD fin structure, and the fin structure included in the access transistor (PG) is defined as a PG fin structure, wherein a width of the PD fin structure is wider than a width of the PG fin structure.

Abstract: Package structures and methods for manufacturing the same are provided. The package structure includes a first bump structure formed over a first substrate. The first bump structure includes a first pillar layer formed over the first substrate and a first barrier layer formed over the first pillar layer. In addition, the first barrier layer has a first protruding portion laterally extending outside a first edge of the first pillar layer. The package structure further includes a second bump structure bonded to the first bump structure through a solder joint. In addition, the second bump structure includes a second pillar layer formed over a second substrate and a second barrier layer formed over the second pillar layer. The first protruding portion of the first barrier layer is spaced apart from the solder joint.

Abstract: A magnetic tunnel junction (MTJ) memory cell and a metallic etch mask portion are formed over a substrate. At least one dielectric etch stop layer is deposited over the metallic etch mask portion, and a via-level dielectric layer is deposited over the at least one dielectric etch stop layer. A via cavity may be etched through the via-level dielectric layer, and a top surface of the at least one dielectric etch stop layer is physically exposed. The via cavity may be vertically extended by removing portions of the at least one dielectric etch stop layer and the metallic etch mask portion. A contact via structure is formed directly on a top surface of the top electrode in the via cavity to provide a low-resistance contact to the top electrode.

Abstract: Encoding methods and apparatuses include receiving input video data of a current block in a current picture and applying a Cross-Component Adaptive Loop Filter (CCALF) processing on the current block based on cross-component filter coefficients to refine chroma components of the current block according to luma sample values. The method further includes signaling two Adaptive Loop Filter (ALF) signal flags and two CCALF signal flags in an Adaptation Parameter Set (APS) with an APS parameter type equal to ALF or parsing two ALF signal flags and two CCALF signal flags from an APS with an APS parameter type equal to ALF, signaling or parsing one or more Picture Header (PH) CCALF syntax elements or Slice Header (SH) CCALF syntax elements, wherein both ALF and CCALF signaling are present either in a PH or SH, and encoding or decoding the current block in the current picture.

Abstract: Methods and systems for thermal management of hardware resources that may be used to provide computer implemented services are disclosed. The disclosed thermal management method and systems may improve the likelihood of data processing systems providing desired computer implemented services by improving the thermal management of the hardware resources without impairment of storage devices. To improve the likelihood of the computer implemented services being provided, the systems may proactively identify whether storage devices subject to impairment due to dynamic motion are present. If such storage devices are present, then the system may automatically take action to reduce the likelihood of the storage devices being subject to dynamic motion sufficient to impair their operation.

Abstract: A semiconductor device includes a substrate; a memory array over the substrate, the memory array including first magnetic tunnel junctions (MTJs), where the first MTJs are in a first dielectric layer over the substrate; and a resistor circuit over the substrate, the resistor circuit including second MTJs, where the second MTJs are in the first dielectric layer.

Abstract: An over-current protection device includes first and second electrode layers and a PTC material layer laminated therebetween. The PTC material layer includes a polymer matrix, and a conductive filler. The polymer matrix has a fluoropolymer. The total volume of the PTC material layer is calculated as 100%, and the fluoropolymer accounts for 47-62% by volume of the PTC material layer. The fluoropolymer has a melt viscosity higher than 3000 Pa·s.

Abstract: In some embodiments, the present disclosure relates an integrated chip including a substrate. A conductive interconnect feature is arranged over the substrate. The conductive interconnect feature has a base feature portion with a base feature width and an upper feature portion with an upper feature width. The upper feature width is narrower than the base feature width such that the conductive interconnect feature has tapered outer feature sidewalls. An interconnect via is arranged over the conductive interconnect feature. The interconnect via has a base via portion with a base via width and an upper via portion with an upper via width. The upper via width is wider than the base via width such that the interconnect via has tapered outer via sidewalls.

Abstract: An over-current protection device includes a first metal layer, a second metal layer and a heat-sensitive layer laminated therebetween. The heat-sensitive layer exhibits a positive temperature coefficient (PTC) characteristic and includes a polymer matrix and a first conductive filler. The polymer matrix includes a polyolefin-based polymer and a fluoropolymer. The fluoropolymer has a melt flow index higher than 1.9 g/10 min, and the polyolefin-based polymer and the fluoropolymer together form an interpenetrating polymer network (IPN). The first conductive filler has a metal-ceramic compound dispersed in the polymer matrix.

Abstract: An electronic device includes a monitor stand, a hinge mechanism, and an operation element. The hinge mechanism includes a back plate, a speed reduction assembly, and a friction assembly. The back plate is fixed to the monitor stand. The speed reduction assembly includes an input plate and a speed reduction member. The speed reduction member is arranged on the input plate. The friction assembly is arranged between the back plate and the input plate. The operation element is connected to the speed reduction member. A rotation center of the operation element coincides with an axis of the back plate and the speed reduction member are coaxially arranged.