Patents by Inventor Yu-Chaio Wu

Yu-Chaio Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • INGOT PULLER APPARATUS THAT USE A SOLID-PHASE DOPANT
    Publication number: 20230160094
    Abstract: Methods for producing a single crystal silicon ingot are disclosed. The ingot is doped with boron using solid-phase boric acid as the source of boron. Boric acid may be used to counter-dope the ingot during ingot growth. Ingot puller apparatus that use a solid-phase dopant are also disclosed. The solid-phase dopant may be disposed in a receptacle that is moved closer to the surface of the melt or a vaporization unit may be used to produce a dopant gas from the solid-phase dopant.
    Type: Application
    Filed: January 9, 2023
    Publication date: May 25, 2023
    Inventors: William L. Luter, Hariprasad Sreedharamurthy, Stephan Haringer, Richard J. Phillips, Nan Zhang, Yu-Chaio Wu
  • METHODS FOR PRODUCING A SINGLE CRYSTAL SILICON INGOT USING BORIC ACID AS A DOPANT
    Publication number: 20230160093
    Abstract: Methods for producing a single crystal silicon ingot are disclosed. The ingot is doped with boron using solid-phase boric acid as the source of boron. Boric acid may be used to counter-dope the ingot during ingot growth. Ingot puller apparatus that use a solid-phase dopant are also disclosed. The solid-phase dopant may be disposed in a receptacle that is moved closer to the surface of the melt or a vaporization unit may be used to produce a dopant gas from the solid-phase dopant.
    Type: Application
    Filed: January 9, 2023
    Publication date: May 25, 2023
    Inventors: William L. Luter, Hariprasad Sreedharamurthy, Stephan Haringer, Richard J. Phillips, Nan Zhang, Yu-Chaio Wu
  • Methods for producing a single crystal silicon ingot using boric acid as a dopant and ingot puller apparatus that use a solid-phase dopant
    Patent number: 11585010
    Abstract: Methods for producing a single crystal silicon ingot are disclosed. The ingot is doped with boron using solid-phase boric acid as the source of boron. Boric acid may be used to counter-dope the ingot during ingot growth. Ingot puller apparatus that use a solid-phase dopant are also disclosed. The solid-phase dopant may be disposed in a receptacle that is moved closer to the surface of the melt or a vaporization unit may be used to produce a dopant gas from the solid-phase dopant.
    Type: Grant
    Filed: May 15, 2020
    Date of Patent: February 21, 2023
    Assignee: GlobalWafers Co., Ltd.
    Inventors: William L. Luter, Hariprasad Sreedharamurthy, Stephan Haringer, Richard J. Phillips, Nan Zhang, Yu-Chaio Wu
  • METHODS FOR PRODUCING A SINGLE CRYSTAL SILICON INGOT USING BORIC ACID AS A DOPANT AND INGOT PULLER APPARATUS THAT USE A SOLID-PHASE DOPANT
    Publication number: 20200407869
    Abstract: Methods for producing a single crystal silicon ingot are disclosed. The ingot is doped with boron using solid-phase boric acid as the source of boron. Boric acid may be used to counter-dope the ingot during ingot growth. Ingot puller apparatus that use a solid-phase dopant are also disclosed. The solid-phase dopant may be disposed in a receptacle that is moved closer to the surface of the melt or a vaporization unit may be used to produce a dopant gas from the solid-phase dopant.
    Type: Application
    Filed: May 15, 2020
    Publication date: December 31, 2020
    Inventors: William L. Luter, Hariprasad Sreedharamurthy, Stephan Haringer, Richard J. Phillips, Nan Zhang, Yu-Chaio Wu