Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a first channel region disposed over a substrate, a second channel region disposed adjacent the first channel region, a gate electrode layer disposed in the first and second channel regions, and a first dielectric feature disposed adjacent the gate electrode layer. The first dielectric feature includes a first dielectric material having a first thickness. The structure further includes a second dielectric feature disposed between the first and second channel regions, and the second dielectric feature includes a second dielectric material having a second thickness substantially less than the first thickness. The second thickness ranges from about 1 nm to about 20 nm.

Abstract: A semiconductor structure includes a substrate, an isolation structure disposed in the substrate, and a hybrid structure disposed over the isolation structure. The hybrid structure is substantially conformal with respect to a profile of the isolation structure. The hybrid structure includes an oxide component, a nitride component surrounding the oxide component, and a first polysilicon component alongside the nitride component. The nitride component includes a first upper surface closed to the first polysilicon component, and a second upper surface distal to the first polysilicon component. The second upper surface is lower than the first upper surface.

Abstract: A method of compiling a deep learning model includes reading metadata from a compiled result, the metadata indicating a structure of the deep learning model corresponding to a low-level IR, receiving shape information of an input tensor of the deep learning model, determining a shape of an output tensor of a first computation operation of the computation operations based on the shape information of the input tensor of the deep learning model and the structure of the deep learning model, tiling the output tensor of the first computation operation into one or more tiles according to the shape of the output tensor of the first computation operation and hardware limitations of a processor executing the deep learning model, and patching one or more copies of a templated hardware command into executable hardware commands.

Abstract: A p-GaN high-electron-mobility transistor, includes a substrate, a channel layer stacked on the substrate, a supply layer stacked on the channel layer, a first doped layer stacked on the supply layer, a second doped layer stacked on the first doped layer, and a third doped layer stacked on the second doped layer. A doping concentration of the first doped layer and the doping concentration of the third doped layer are lower than a doping concentration of the second doped layer. A gate is located on the third doped layer, and a source and a drain are electrically connected to the channel layer and the supply layer, respectively.

Abstract: A semiconductor structure includes a source/drain feature in the semiconductor layer. The semiconductor structure includes a dielectric layer over the source/drain feature. The semiconductor structure includes a silicide layer over the source/drain feature. The semiconductor structure includes a barrier layer over the silicide layer. The semiconductor structure includes a seed layer over the barrier layer. The semiconductor structure includes a metal layer between a sidewall of the seed layer and a sidewall of the dielectric layer, a sidewall of each of the silicide layer, the barrier layer, and the metal layer directly contacting the sidewall of the dielectric layer. The semiconductor structure includes a source/drain contact over the seed layer.

Abstract: A cooling apparatus is provided. An external cooling fluid flows into an external inlet opening from an external inlet pipe and passes through a heat exchanger to flow out of an external outlet opening to an external outlet pipe. An internal cooling fluid flows into an internal inlet pipe from the server and flows into an internal inlet opening from the internal inlet pipe and passes through the heat exchanger for heat exchange with the external cooling fluid to flow out of an internal outlet opening to an internal outlet pipe. A hot-swap pump has a pump main body, an inlet anti-leakage pipe, an outlet anti-leakage pipe and a hot-swap connector. The inlet anti-leakage pipe includes an inlet connector and an inlet anti-leakage valve. The outlet anti-leakage pipe includes an outlet connector and an outlet anti-leakage valve. The hot-swap connector is electrically connected to the pump main body.

Abstract: An optical sensing module includes a substrate, a cover, a plurality of light-emitting chips, a light-receiving chip, and a plurality of encapsulants. The cover is disposed on the substrate. A plurality of first chambers and a second chamber are formed between the cover and the substrate. The cover has a plurality of light-emitting holes communicating with the first chambers, respectively, and a light-receiving hole communicating with the second chamber. The light-emitting chips are disposed on the substrate and in the first chambers, respectively. The light-receiving chip is disposed on the substrate and in the second chamber. The encapsulants fill the first and second chambers and enclose the light-emitting chips and the light-receiving chip, respectively. Hence, characterized in that: the light-emitting chips and the light-receiving chip are disposed on the substrate, and the light-emitting chips emit light beams in different colors to enhance light emission efficiency.

Abstract: An optical sensing module includes a substrate, a cover, a plurality of light-emitting chips, a light-receiving chip, and a plurality of encapsulants. The cover is disposed on the substrate. A plurality of first chambers and a second chamber are formed between the cover and the substrate. The cover has a plurality of light-emitting holes communicating with the first chambers, respectively, and a light-receiving hole communicating with the second chamber. The light-emitting chips are disposed on the substrate and in the first chambers, respectively. The light-receiving chip is disposed on the substrate and in the second chamber. The encapsulants fill the first and second chambers and enclose the light-emitting chips and the light-receiving chip, respectively. Hence, characterized in that: the light-emitting chips and the light-receiving chip are disposed on the substrate, and the light-emitting chips emit light beams in different colors to enhance light emission efficiency.

Abstract: A remote control method is provided. The method is adapted to a first terminal apparatus, and the first terminal apparatus corresponds to a first phone number. The remote control method includes the following steps. A second terminal apparatus is connected to a telecommunication server, wherein the telecommunication server corresponds to a telecommunication service provider who provides the first phone number a telecommunication service. A call diversion service is activated on the telecommunication server through the second terminal apparatus in order to divert a telecommunication signal which is to be forwarded to the first phone number to a second phone number.

Abstract: The present invention relates to a method for encrypting a short message in mobile communication. According to the present invention, a user first inputs short-message content and a short-message password to a first communication electronic device. Then the first communication electronic device writes the short-message content to a short-message packet according to a short-message protocol, configures a set of unused parameters of the short-message packet as a set of encryption parameters according to the short-message protocol, and configures the short-message password to the set of encryption parameters for transmitting the short-message packet containing the set of encryption parameters to a second communication electronic device. Thereby, according to the present invention, the short message is encrypted.

Abstract: A remote control method is provided. The method is adapted to a first terminal apparatus, and the first terminal apparatus corresponds to a first phone number. The remote control method includes the following steps. A second terminal apparatus is connected to a telecommunication server, wherein the telecommunication server corresponds to a telecommunication service provider who provides the first phone number a telecommunication service. A call diversion service is activated on the telecommunication server through the second terminal apparatus in order to divert a telecommunication signal which is to be forwarded to the first phone number to a second phone number.

Abstract: The present invention relates to a method for encrypting a short message in mobile communication. According to the present invention, a user first inputs short-message content and a short-message password to a first communication electronic device. Then the first communication electronic device writes the short-message content to a short-message packet according to a short-message protocol, configures a set of unused parameters of the short-message packet as a set of encryption parameters according to the short-message protocol, and configures the short-message password to the set of encryption parameters for transmitting the short-message packet containing the set of encryption parameters to a second communication electronic device. Thereby, according to the present invention, the short message is encrypted.

Abstract: A membrane composition and process for its formation are disclosed from the removal of carbon dioxide (CO2) from mixed gases, such as flue gases of energy production facilities. The membrane includes a substrate layer comprising inorganic oxides, a barrier layer of in-situ formed Li2ZrO3, a Li2ZrO3 sorbent layer and an inorganic oxide cap layer. The membrane has a feed side for introduction of mixed gases containing nitrogen (N2) and a sweep side for recovery of CO2 wherein the membrane has a relatively high selectivity for CO2 transport at temperatures in the range of 400° to 700° C.

Abstract: A process and apparatus for enhancement of syngas production (CO and H2) of a carbon based feedstock with CO2 conversion, which utilized CO2 as an oxygen resource and converts CO2 to CO through chemical reactions. The process includes a thermal plasma reactor and optionally a nonthermal plasma reactor.

Abstract: A handheld type electronic device includes a main device body, a screen body, and first and second limiting mechanisms provided between the main device body and the screen body. The main device body includes a depression. The screen body is provided between left and right inner walls of the depression. The first limiting mechanism includes a pair of first protrusions and a pair of second recesses. The first protrusions extend resiliently and respectively into the first recesses to limit the screen body at a flipped-up state. The second limiting mechanism includes at least one second protrusion, and a second recess. The second protrusion is disposed to extend into the second recess to limit the screen body at a folded state. The second protrusion is subjectable to a force to withdraw from the second recess to enable the screen body to be flipped upward relative to the depression.

Abstract: An apparatus for detecting an operational status of a semiconductor equipment includes an audio frequency signal receiving unit and an analysis and determination unit. The audio frequency signal receiving unit is used for receiving an audio frequency signal from the semiconductor equipment while the semiconductor equipment is working. The analysis and determination unit is used for analyzing the audio frequency signal to determine statuses of components of the semiconductor equipment.

Abstract: A process and apparatus for enhancement of syngas production (CO and H2) of a carbon based feedstock with CO2 conversion, which utilized CO2 as an oxygen resource and converts CO2 to CO through chemical reactions. The process includes a thermal plasma reactor and optionally a nonthermal plasma reactor.

Abstract: An apparatus for detecting an operational status of a semiconductor equipment includes an audio frequency signal receiving unit and an analysis and determination unit. The audio frequency signal receiving unit is used for receiving an audio frequency signal from the semiconductor equipment while the semiconductor equipment is working. The analysis and determination unit is used for analyzing the audio frequency signal to determine statuses of components of the semiconductor equipment.

Abstract: A method for projecting wafer product overlay error of the present invention is disclosed, the steps of the method comprises:(a) sample equipment overlay error data, equipment condition data, and actual wafer product overlay error data; (b) establish a neural network, the equipment overlay error data and the equipment condition data are inputs of the neural network, the generated output of the neural network is projected wafer product overlay error data, and the actual wafer product overlay error data is the target output of the neural network; and (c) set a mean square error target, train the neural network continuously until the mean square error of the neural network is no longer bigger than the mean square error target. Additionally a method for projecting wafer product critical dimension is also presented in the present invention.

Abstract: A handheld type electronic device includes a main device body, a screen body, and first and second limiting mechanisms provided between the main device body and the screen body. The main device body includes a depression. The screen body is provided between left and right inner walls of the depression. The first limiting mechanism includes a pair of first protrusions and a pair of second recesses. The first protrusions extend resiliently and respectively into the first recesses to limit the screen body at a flipped-up state. The second limiting mechanism includes at least one second protrusion, and a second recess. The second protrusion is disposed to extend into the second recess to limit the screen body at a folded state. The second protrusion is subjectable to a force to withdraw from the second recess to enable the screen body to be flipped upward relative to the depression.