Patents by Inventor Yu-Chang Lai

Yu-Chang Lai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240395750
    Abstract: One aspect of the present disclosure pertains to an IC packaging structure that includes a bottom circuit structure having first semiconductor devices on a first substrate, a first interconnect structure over the first semiconductor devices, and a first bonding structure over the first interconnect structure; and a top circuit structure having second semiconductor devices on a second substrate, a second interconnect structure underlying the second semiconductor devices, and a second bonding structure underlying the second interconnect structure. The first bonding structure includes a first metal feature having a first crystalline bulk layer of a metal and a first amorphous surface layer of the metal. The second bonding structure includes a second metal feature having a second crystalline bulk layer of the metal and a second amorphous surface layer of the metal. The top circuit structure is bonded to the bottom circuit structure through the first and second amorphous surface layers.
    Type: Application
    Filed: September 13, 2023
    Publication date: November 28, 2024
    Inventors: Jui Shen CHANG, Yu-Chang LAI, Chen-Nan CHIU, Yao-Chun CHUANG, Jun HE
  • Publication number: 20220388092
    Abstract: A method for forming a bonding structure is provided, including providing a first metal, wherein the first metal has a first absolute melting point. The method includes forming a silver nano-twinned layer on the first metal. The silver nano-twinned layer includes parallel-arranged twin boundaries. The parallel-arranged twin boundaries include 90% or more [111] crystal orientation. The method includes oppositely bonding the silver nano-twinned layer to a second metal. The second metal has a second absolute melting point. The bonding of the silver nano-twinned layer and the second metal is performed at a temperature of 300° C. to half of the first absolute melting point or 300° C. to half of the second absolute melting point.
    Type: Application
    Filed: June 1, 2022
    Publication date: December 8, 2022
    Inventors: Tung-Han CHUANG, Po-Ching WU, Pei-Ing LEE, Yu-Chang LAI, Hsing-Hua TSAI, Chung-Hsin CHOU
  • Patent number: 8633857
    Abstract: An antenna structure includes a substrate, a radiation unit, and a metal plate. The radiation unit is disposed on the substrate. The metal plate is separated from the radiation unit for a distance and is electrically isolated with the radiation unit. The metal plate is excited by the radiation unit to generate at least one resonance mode, and includes a hole penetrating the metal plate. Thus, the gain is enhanced, the bandwidth is increased, and multiple resonance modes are provided.
    Type: Grant
    Filed: November 2, 2010
    Date of Patent: January 21, 2014
    Assignee: Advanced Connection Technology, Inc.
    Inventors: Yang-Kai Wang, Chien-Hung Chen, Shu-An Yeh, Yu-Chang Lai
  • Publication number: 20120050123
    Abstract: An antenna structure includes a substrate, a radiation unit, and a metal plate. The radiation unit is disposed on the substrate. The metal plate is separated from the radiation unit for a distance and is electrically isolated with the radiation unit. The metal plate is excited by the radiation unit to generate at least one resonance mode, and includes a hole penetrating the metal plate. Thus, the gain is enhanced, the bandwidth is increased, and multiple resonance modes are provided.
    Type: Application
    Filed: November 2, 2010
    Publication date: March 1, 2012
    Applicant: Advanced Connection Technology, Inc.
    Inventors: Yang-Kai Wang, Chien-Hung Chen, Shu-An Yeh, Yu-Chang Lai