Patents by Inventor Yu Chang Yang

Yu Chang Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12243872
    Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a first channel region disposed over a substrate, a second channel region disposed adjacent the first channel region, a gate electrode layer disposed in the first and second channel regions, and a first dielectric feature disposed adjacent the gate electrode layer. The first dielectric feature includes a first dielectric material having a first thickness. The structure further includes a second dielectric feature disposed between the first and second channel regions, and the second dielectric feature includes a second dielectric material having a second thickness substantially less than the first thickness. The second thickness ranges from about 1 nm to about 20 nm.
    Type: Grant
    Filed: February 15, 2022
    Date of Patent: March 4, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chen-Huang Huang, Yu-Ling Cheng, Shun-Hui Yang, An Chyi Wei, Chia-Jen Chen, Shang-Shuo Huang, Chia-I Lin, Chih-Chang Hung
  • Patent number: 12230517
    Abstract: An exhaust structure includes a piping section, wherein the piping section has a first inner diameter in a central region of the piping section, the piping section has a second diameter in at least one of an inlet or an outlet, and the second diameter has a same value as the first inner diameter. The exhaust structure further includes a plurality of smoothing layers configured to resist turbulence and condensation produced by a flow of one or more gasses in the piping section.
    Type: Grant
    Filed: May 26, 2022
    Date of Patent: February 18, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsien-Chang Hsieh, Chun-Chih Lin, Tah-te Shih, Wen-Hsong Wu, Chune-Te Yang, Yu-Jen Su
  • Patent number: 12223300
    Abstract: A method of compiling a deep learning model includes reading metadata from a compiled result, the metadata indicating a structure of the deep learning model corresponding to a low-level IR, receiving shape information of an input tensor of the deep learning model, determining a shape of an output tensor of a first computation operation of the computation operations based on the shape information of the input tensor of the deep learning model and the structure of the deep learning model, tiling the output tensor of the first computation operation into one or more tiles according to the shape of the output tensor of the first computation operation and hardware limitations of a processor executing the deep learning model, and patching one or more copies of a templated hardware command into executable hardware commands.
    Type: Grant
    Filed: April 28, 2023
    Date of Patent: February 11, 2025
    Assignee: MEDIATEK INC.
    Inventors: Meng-Hsuan Yang, Po-hua Huang, Hsing-Chang Chou, Ting Chen Tsan, Yu-Lung Lu
  • Publication number: 20080093809
    Abstract: The present invention relates to a gasket structure for use in a fuel cell having a separator which defines at each of the both ends thereof a hydrogen manifold, an air manifold, an antifreezing solution manifold between the hydrogen manifold and the air manifold, the structure comprising a plurality of gasket parts a portion of which is open toward the outside of the separator so as to prevent antifreezing solution leaked from the antifreezing solution manifold from flowing into the hydrogen manifold and the air manifold.
    Type: Application
    Filed: November 15, 2006
    Publication date: April 24, 2008
    Applicant: Hyundai Motor Company
    Inventors: Young Bum Kum, Tae Won Lim, Sae Hoon Kim, Yu Chang Yang