Patents by Inventor Yu Chang

Yu Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240113143
    Abstract: Various embodiments of the present disclosure are directed towards an imaging device including a first image sensor element and a second image sensor element respectively comprising a pixel unit disposed within a semiconductor substrate. The first image sensor element is adjacent to the second image sensor element. A first micro-lens overlies the first image sensor element and is laterally shifted from a center of the pixel unit of the first image sensor element by a first lens shift amount. A second micro-lens overlies the second image sensor element and is laterally shifted from a center of the pixel unit of the second image sensor element by a second lens shift amount different from the first lens shift amount.
    Type: Application
    Filed: January 6, 2023
    Publication date: April 4, 2024
    Inventors: Cheng Yu Huang, Wen-Hau Wu, Chun-Hao Chuang, Keng-Yu Chou, Wei-Chieh Chiang, Chih-Kung Chang
  • Publication number: 20240113032
    Abstract: Interconnect structure packages (e.g., through silicon vias (TSV) packages, through interlayer via (TIV) packages) may be pre-manufactured as opposed to forming TIVs directly on a carrier substrate during a manufacturing process for a semiconductor die package at backend packaging facility. The interconnect structure packages may be placed onto a carrier substrate during manufacturing of a semiconductor device package, and a semiconductor die package may be placed on the carrier substrate adjacent to the interconnect structure packages. A molding compound layer may be formed around and in between the interconnect structure packages and the semiconductor die package.
    Type: Application
    Filed: April 25, 2023
    Publication date: April 4, 2024
    Inventors: Kai-Fung CHANG, Chin-Wei LIANG, Sheng-Feng WENG, Ming-Yu YEN, Cheyu LIU, Hung-Chih CHEN, Yi-Yang LEI, Ching-Hua HSIEH
  • Patent number: 11947180
    Abstract: An optical system is provided. The optical system includes a first movable portion, a fixed portion, a first driving assembly, and a first sensing assembly. The first movable portion is used for connecting to an optical assembly having a main axis. The first movable portion is movable relative to the fixed portion. The first driving assembly is used for driving the first movable portion to move relative to the fixed portion. The first sensing assembly is used for sensing the movement of the first movable portion relative to the fixed portion.
    Type: Grant
    Filed: December 24, 2020
    Date of Patent: April 2, 2024
    Assignee: TDK TAIWAN CORP.
    Inventors: Chao-Chang Hu, Chen-Hsien Fan, Yueh-Lin Lee, Yu-Chiao Lo
  • Patent number: 11948798
    Abstract: A method for manufacturing an integrated circuit includes patterning a plurality of photomask layers over a substrate, partially backfilling the patterned plurality of photomask layers with a first material using atomic layer deposition, completely backfilling the patterned plurality of photomask layers with a second material using atomic layer deposition, removing the plurality of photomask layers to form a masking structure comprising at least one of the first and second materials, and transferring a pattern formed by the masking structure to the substrate and removing the masking structure. The first material includes a silicon dioxide, silicon carbide, or carbon material, and the second material includes a metal oxide or metal nitride material.
    Type: Grant
    Filed: July 16, 2021
    Date of Patent: April 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ching-Yu Chang, Jung-Hau Shiu, Jen Hung Wang, Tze-Liang Lee
  • Patent number: 11948879
    Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a device, a first dielectric material disposed over the device, and an opening is formed in the first dielectric material. The semiconductor device structure further includes a conductive structure disposed in the opening, and the conductive structure includes a first sidewall. The semiconductor device structure further includes a surrounding structure disposed in the opening, and the surrounding structure surrounds the first sidewall of the conductive structure. The surrounding structure includes a first spacer layer and a second spacer layer adjacent the first spacer layer. The first spacer layer is separated from the second spacer layer by an air gap.
    Type: Grant
    Filed: July 27, 2022
    Date of Patent: April 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Lin-Yu Huang, Li-Zhen Yu, Chia-Hao Chang, Cheng-Chi Chuang, Kuan-Lun Cheng, Chih-Hao Wang
  • Patent number: 11948800
    Abstract: A device includes a pair of gate spacers on a substrate, and a gate structure on the substrate and between the gate spacers. The gate structure includes an interfacial layer, a metal oxide layer, a nitride-containing layer, a tungsten-containing layer, and a metal compound layer. The interfacial layer is over the substrate. The metal oxide layer is over the interfacial layer. The nitride-containing layer is over the metal oxide layer. The tungsten-containing layer is over the nitride-containing layer. The metal compound layer is over the tungsten-containing layer. The metal compound layer has a different material than a material of the tungsten-containing layer.
    Type: Grant
    Filed: December 14, 2022
    Date of Patent: April 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Yu Chen, Yu-Chi Lu, Chih-Pin Tsao, Shih-Hsun Chang
  • Publication number: 20240103375
    Abstract: A method of forming a patterned photoresist layer includes the following operations: (i) forming a patterned photoresist on a substrate; (ii) forming a molding layer covering the patterned photoresist; (iii) reflowing the patterned photoresist in the molding layer; and (iv) removing the molding layer from the reflowed patterned photoresist. In some embodiments, the molding layer has a glass transition temperature that is greater than or equal to the glass transition temperature of the patterned photoresist. In yet some embodiments, the molding layer has a glass transition temperature that is 3° C.-30° C. less than the glass transition temperature of the patterned photoresist.
    Type: Application
    Filed: November 29, 2023
    Publication date: March 28, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Chih HO, Ching-Yu CHANG, Chin-Hsiang LIN
  • Publication number: 20240105787
    Abstract: Embodiments of the present disclosure provide a method of forming a contact opening using selective ALE operations to remove ILD layer along an upper profile of a source/drain region, and then form a source/drain contact feature having a concave bottom profile with increased contact area.
    Type: Application
    Filed: February 1, 2023
    Publication date: March 28, 2024
    Inventors: Cheng-Wei CHANG, Shahaji B. MORE, Chi-Yu CHOU, Yueh-Ching PAI
  • Publication number: 20240107414
    Abstract: This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for switching a secondary cell to a primary cell. A user equipment (UE) monitors a first radio condition of the UE for beams of a primary cell and a second radio condition for beams of one or more secondary cells configured for the UE in carrier aggregation. The UE transmits a request to configure a candidate beam of at least one candidate secondary cell as a new primary cell in response to the first radio condition not satisfying a first threshold and the second radio condition for the at least one candidate secondary cell satisfying a second threshold. A base station determines to reconfigure at least one secondary cell as the new primary cell. The base station and the UE perform a handover of the UE to the new primary cell.
    Type: Application
    Filed: September 23, 2022
    Publication date: March 28, 2024
    Inventors: Yu-Chieh HUANG, Kuhn-Chang LIN, Jen-Chun CHANG, Wen-Hsin HSIA, Chia-Jou LU, Sheng-Chih WANG, Chenghsin LIN, Yeong Leong CHOO, Chun-Hsiang CHIU, Chihhung HSIEH, Kai-Chun CHENG, Chung Wei LIN
  • Publication number: 20240107776
    Abstract: An antiferroelectric field effect transistor (Anti-FeFET) of a memory cell includes an antiferroelectric layer instead of a ferroelectric layer. The antiferroelectric layer may operate based on a programmed state and an erased state in which the antiferroelectric layer is in a fully polarized alignment and a non-polarized alignment (or a random state of polarization), respectively. This enables the antiferroelectric layer in the FeFET to provide a sharper/larger voltage drop for an erase operation of the FeFET (e.g., in which the FeFET switches or transitions from the programmed state to the erased state) relative to a ferroelectric material layer that operates based on switching between two opposing fully polarized states.
    Type: Application
    Filed: January 5, 2023
    Publication date: March 28, 2024
    Inventors: Chun-Chieh LU, Chih-Yu CHANG, Yu-Chuan SHIH, Huai-Ying HUANG, Yu-Ming LIN
  • Publication number: 20240102980
    Abstract: Gas detection devices comprise a dehydration unit a concentration unit, and a temperature control unit for controlling a temperature. The gas detection device includes a sampling mode in which sample gas flows into and out of the dehydration unit through a first port and a second port, respectively, wherein the volatile organic compounds in the sample gas are concentrated in the concentration unit. The temperature control unit may be configured such that the temperature of the sample gas after flowing out from the dehydration unit and before flowing into the concentration unit is not greater than a first preset temperature. Generation of condensed substances in the sample gas can be effectively avoided in a simple manner after the sample gas flows into the concentration unit, thereby further preventing ice blockage. Methods for detecting volatile organic compounds in a sample gas are also disclosed.
    Type: Application
    Filed: September 22, 2023
    Publication date: March 28, 2024
    Applicant: Thermo Fisher (Shanghai) Instrument Co., Ltd.
    Inventors: Te Yu HUNG, Chien Kuo CHANG, Colin ZOU, Rong Hua CHEN, Jun FANG
  • Patent number: 11939432
    Abstract: Synthetic amino acid-modified polymers and methods of making the same and using the same are disclosed. The synthetic amino acid-modified polymers possess distinct thermosensitive, improved water-erosion resistant, and enhanced mechanical properties, and are suitable of reducing or preventing formation of postoperative tissue adhesions. Additionally, the amino acid-modified polymers can also be used as a vector to deliver pharmaceutically active agents.
    Type: Grant
    Filed: April 23, 2021
    Date of Patent: March 26, 2024
    Assignee: PROVIEW-MBD BIOTECH CO., LTD.
    Inventors: Yu-Chia Chang, Yunn-Kuen Chang, Wen-Yen Huang, Ging-Ho Hsiue, Hsieh-Chih Tsai, Shuian-Yin Lin, Nai-Sheng Hsu, Tzu-Yu Lin
  • Patent number: 11939431
    Abstract: The present invention relates to a composition comprising an amino acid-modified polymer, a carboxypolysaccharide, and may further include a metal ion for anti-adhesion and vector application. More specifically, the invention relates to a thermosensitive composition having enhanced mechanical and improved water-erosion resistant properties for efficiently preventing tissue adhesions and can serve as a vector with bio-compatible, bio-degradable/absorbable, and in-vivo sustainable properties.
    Type: Grant
    Filed: April 23, 2021
    Date of Patent: March 26, 2024
    Assignee: PROVIEW-MBD BIOTECH CO., LTD.
    Inventors: Yu-Chia Chang, Yunn-Kuen Chang, Wen-Yen Huang, Ging-Ho Hsiue, Hsieh-Chih Tsai, Shuian-Yin Lin, Nai-Sheng Hsu, Tzu-Yu Lin
  • Patent number: 11942441
    Abstract: A semiconductor device includes a through-silicon via (TSV) in a TSV zone in a substrate and the TSV extends through the substrate; an ESD cell proximal to a first end of the TSV and in contact with the TSV zone, the ESD cell including a set of diodes electrically connected in parallel to each other; an antenna pad electrically connected to a second end of the TSV; and an antenna electrically connected to the antenna pad and extending in a first direction, the first direction is parallel to a major axis of the TSV. The semiconductor device includes a conductive pillar extending parallel to the TSV at a same side of the substrate as the antenna pad, wherein a first end of the conductive pillar electrically connects to the antenna pad, and a second end of the conductive pillar electrically connects to the set of diodes of the ESD cell.
    Type: Grant
    Filed: September 21, 2021
    Date of Patent: March 26, 2024
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., TSMC CHINA COMPANY, LIMITED
    Inventors: HoChe Yu, Fong-Yuan Chang, XinYong Wang, Chih-Liang Chen, Tzu-Heng Chang
  • Patent number: 11938272
    Abstract: The present invention discloses a respiratory mask to connect a user and a breathing tube for receiving a first gas and releasing a second gas, so as to provide an user's respiratory system to exchange gas. It comprises a main part, an air chamber exchange part, an insert and a clamping part. The main part provides a first, second, and third openings that are communicated each other. The first opening connects to the breathing tube to receive the first gas from the breathing tube. The air chamber exchange part provides an exhaust assembly to relieve pressure according to an internal air pressure of the air chamber exchange part. The insert connects to the user's nose so as to direct the first gas to the user or direct the second gas from the user to the air chamber exchange part. The clamping part connects to the user's mouth.
    Type: Grant
    Filed: January 29, 2020
    Date of Patent: March 26, 2024
    Assignee: MACKAY MEMORIAL HOSPITAL
    Inventors: Wen-Han Chang, Shih-Yi Lee, Ren-Jei Chung, Ching-Yu Kuo
  • Patent number: 11942322
    Abstract: In a method of manufacturing a semiconductor device, a metallic photoresist layer is formed over a target layer to be patterned, the metallic photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern. The metallic photo resist layer is an alloy layer of two or more metal elements, and the selective exposure changes a phase of the alloy layer.
    Type: Grant
    Filed: April 9, 2021
    Date of Patent: March 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: An-Ren Zi, Chun-Chih Ho, Yahru Cheng, Ching-Yu Chang
  • Publication number: 20240090564
    Abstract: Features relating to a vaporizer body are provided. The vaporizer body may include an outer shell that includes an inner region defined by an outer shell sidewall. A support structure is configured to fit within the inner region of the outer shell. The support structure includes a storage region defined by a top support structure, a bottom support structure, a bottom cap, and a gasket. An integrated board assembly is configured to fit within the storage region of the support structure. The integrated board assembly may include a printed circuit board assembly formed of multiple layers that form a rigid structure and that include an inner, flexible layer. A first antenna is integrated at a proximal end of the flexible layer, and a second antenna is integrated at a distal end of the flexible layer.
    Type: Application
    Filed: April 24, 2023
    Publication date: March 21, 2024
    Inventors: Joshua Fu, Christopher Loental, Marko Markovic, Alexander Weiss, Alexander Ringrose, David Carlberg, Robyn Nariyoshi, Devin Spratt, Nicholas J. Hatton, Yen Jen Chang, Chen Yu Li, Barry Tseng, Prince Wang, Thomas Germann, Andreas Schaefer
  • Publication number: 20240096928
    Abstract: A semiconductor structure and manufacturing method thereof are provided. The semiconductor structure includes a substrate and a metallization structure over the substrate. The metallization structure includes a MIM structure, a first contact and a second contact. The MIM structure includes a bottom electrode layer, a dielectric layer on the bottom electrode layer, a ferroelectric layer on the dielectric layer, and a top electrode layer on the ferroelectric layer. The ferroelectric layer is substantially made of lead zirconate titanate (PZT), BaTiO3 (BTO), or barium strontium titanate (BST), and a thickness of the ferroelectric layer is greater than a thickness of the dielectric layer.
    Type: Application
    Filed: November 24, 2023
    Publication date: March 21, 2024
    Inventors: SAI-HOOI YEONG, CHIH-YU CHANG, CHUN-YEN PENG, CHI ON CHUI
  • Publication number: 20240093024
    Abstract: A polymer is formed by capping a copolymer-graft-polylactone with an alcohol, wherein the copolymer is copolymerized from an anhydride monomer with a double bond, a monomer with a double bond, and an initiator. The polymer can be mixed with an organic solvent and pigment powder to form a dispersion. The dispersion can be mixed with a binder to form a paint.
    Type: Application
    Filed: November 23, 2022
    Publication date: March 21, 2024
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Cha-Wen CHANG, Jen-Yu CHEN, Wan-Jung TENG, Wen-Pin CHUANG, Ruo-Han YU
  • Publication number: 20240096623
    Abstract: A method of manufacturing a semiconductor device includes forming a first layer comprising an organic material over a substrate. A second layer is formed over the first layer, wherein the second layer includes a silicon-containing material and one or more selected from the group consisting of a photoacid generator, an actinic radiation absorbing additive including an iodine substituent, and a silicon-containing monomer having iodine or phenol group substituents. A photosensitive layer is formed over the second layer, and the photosensitive layer is patterned.
    Type: Application
    Filed: March 17, 2023
    Publication date: March 21, 2024
    Inventors: Chieh-Hsin HSIEH, Wei-Han LAI, Ching-Yu CHANG