Abstract: A chemical mechanical polishing pad conditioner includes a bottom substrate, an intermediate substrate and a diamond film. The intermediate substrate is arranged on the bottom substrate; the intermediate substrate includes a hollow portion and an annular portion surrounding the hollow portion; the annular portion includes a plurality of first polishing areas arranged at intervals along an annular area and a plurality of second polishing areas arranged among the first polishing areas; and the first polishing areas extend along a radial direction on the intermediate substrate. The diamond film is arranged on the intermediate substrate, and the diamond film overlays the first polishing areas and the second polishing areas. The diamond film is provided with a plurality of first surfaces and a plurality of second surfaces, and first polishing tips protruding from the first surfaces and second polishing tips protruding from the second surface are formed on the diamond film.

Abstract: The present invention provides a CMP abrasive pad conditioner, comprising a bottom substrate; an intermediate layer located on the bottom substrate, the intermediate layer including a hollow portion and an annular portion surrounding the hollow portion, the annular portion being provided with a plurality of bumps; and a diamond film located on the intermediate layer, and forming a plurality of abrasive projections corresponding to the bumps of the intermediate layer; in this case, a top surface of the abrasive projections is formed with a patterned configuration and the top surface is provided with a center line average roughness (Ra) between 2 and 20.

Abstract: The present invention provides a CMP abrasive pad conditioner, comprising a bottom substrate; an intermediate layer located on the bottom substrate, the intermediate layer including a hollow portion and an annular portion surrounding the hollow portion, the annular portion being provided with a plurality of bumps; and a diamond film located on the intermediate layer, and forming a plurality of abrasive projections corresponding to the bumps of the intermediate layer; in this case, a top surface of the abrasive projections is formed with a patterned configuration and the top surface is provided with a center line average roughness (Ra) between 2 and 20.