Abstract: The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.

Abstract: Two types of blue light blocking contact lenses are provided and are formed by curing different compositions. The first composition includes a blue light blocking component formed by mixing or reacting a first hydrophilic monomer and a yellow dye, a first colored dye component formed by mixing or reacting a second hydrophilic monomer and a first colored dye, at least one third hydrophilic monomer, a crosslinker, and an initiator. The first colored dye includes a green dye, a cyan dye, a blue dye, an orange dye, a red dye, a black dye, or combinations thereof. The second composition includes a blue light blocking component, at least one hydrophilic monomer, a crosslinker, and an initiator. The blue light blocking component is formed by mixing or reacting glycerol monomethacrylate and a yellow dye. Further, methods for preparing the above contact lenses are provided.

Abstract: A semiconductor device structure is provided. The semiconductor device has a first dielectric wall between an n-type source/drain region and a p-type source/drain region to physically and electrically isolate the n-type source/drain region and the p-type source/drain region from each other. A second dielectric wall is formed between a first channel region connected to the n-type source/drain region and a second channel region connected to the p-type source/drain region. A contact is formed to physically and electrically connect the n-type source/drain region with the p-type source/drain region, wherein the contact extends over the first dielectric wall. The first electric wall has a gradually decreasing width W5 towards a tip of the dielectric wall from a top contact position between the first dielectric wall and either the n-type source/drain region or the p-type source/drain region.

Abstract: A rotary seat including a base includes an outer surface, and a composite material layer attached to at least a part of the outer surface. The base also includes a recess for accommodating a turntable and including a first opening on the outer surface. The material of the composite material layer includes fibers and a resin. Therefore, the rotary seat may be more lightweight. A rotary table is also provided and includes the rotary seat, a driving device which drives the rotary seat to rotate, and a turntable which is rotatably disposed in the recess of the base.

Abstract: The present invention introduces a new hybrid thermal energy harvesting device that combines electrochemistry and semiconductors to achieve simultaneous high saturation thermo-voltage and high current density. This innovation demonstrates the synergistic effect of integrating semiconductors, commonly used in solid-state thermoelectrics for high current density, with ion-conducting polymer electrolytes, known for their high thermo-voltage. The device ensures constant high-power output from continuous or periodic heat sources. It directly converts heat into electricity for immediate use or stores electricity derived from low-grade temperature differentials and temperature ranges for later discharge. It exhibits characteristics resembling both photovoltaics and capacitors simultaneously.

Abstract: An electronic device is provided. The electronic device includes a substrate, a first gate circuit, a second gate circuit, a signal line, and a shielding layer. The substrate includes a display area and a peripheral area. The first gate circuit is disposed in the peripheral area. The second gate circuit is disposed in the peripheral area. The signal line is coupled between the first gate circuit and the second gate circuit. The signal line includes a specific line segment, and the specific line segment overlaps the display area. The shielding layer is disposed in the display area. The shielding layer overlaps the specific line segment.

Abstract: A heat capacitor with simple structure, easy to manufacture and high thermoelectric conversion efficiency is provided. The heat capacitor includes: a pair of electrodes, at least one said electrode being a carbonaceous electrode; and a thermoelectric electrolyte disposed between the pair of electrodes, wherein the distance between the pair of electrodes is at most 1 mm.

Abstract: A heat capacitor with simple structure, easy to manufacture and high thermoelectric conversion efficiency is provided. The heat capacitor includes: a pair of electrodes, at least one said electrode being a carbonaceous electrode; and a thermoelectric electrolyte disposed between the pair of electrodes, wherein the distance between the pair of electrodes is at most 1 mm.

Abstract: An electronic device is provided. The electronic device includes a substrate, a first gate circuit, a second gate circuit, a signal line, and a shielding layer. The substrate includes a display area and a peripheral area. The first gate circuit is disposed in the peripheral area. The second gate circuit is disposed in the peripheral area. The signal line is coupled between the first gate circuit and the second gate circuit. The signal line includes a specific line segment, and the specific line segment overlaps the display area. The shielding layer is disposed in the display area. The shielding layer overlaps the specific line segment.

Abstract: A method for preparing a multi-substituted acrylic acid compound includes steps as follow. A reaction solution is provided, wherein the reaction solution includes an organometallic reagent, a nickel-containing metal catalyst, a catalyst ligand, a first solvent, and the organometallic reagent is a Grignard reagent or a Gilman reagent. An addition step is conducted, wherein an alkyne compound is mixed with the reaction solution so as to undergo an addition reaction, thus an intermediate solution is obtained. A substitution step is conducted, wherein a carbon dioxide is introduced into the intermediate solution so as to obtain the multi-substituted acrylic acid compound.

Abstract: A touch display device including a touch display panel and a data line driving circuit is provided. The touch display panel includes a plurality of pixels and a first shift register unit. The first shift register unit provides a first shifted signal to a first portion of the pixels. A first transistor receives a clock signal, is coupled to an output node, and outputs the first shifted signal. A second transistor receives a first trigger signal, is coupled to the first transistor. A third transistor is coupled to the second transistor, receives a first operation voltage and a second trigger signal. A fourth transistor is coupled to the first source, receives a second operation voltage and the second trigger signal. A capacitor is coupled between the first transistor and stacked by a first metal layer, a second metal layer, and a third metal layer.

Abstract: A touch display device including a touch display panel and a data line driving circuit is provided. The touch display panel includes a plurality of pixels and a first shift register unit. The first shift register unit provides a first shifted signal to a first portion of the pixels. A first transistor receives a clock signal, is coupled to an output node, and outputs the first shifted signal. A second transistor receives a first trigger signal, is coupled to the first transistor. A third transistor is coupled to the second transistor, receives a first operation voltage and a second trigger signal. A fourth transistor is coupled to the first source, receives a second operation voltage and the second trigger signal. A capacitor is coupled between the first transistor and stacked by a first metal layer, a second metal layer, and a third metal layer.