Abstract: Techniques are provided herein for forming multi-tier memory structures with graded characteristics across different tiers. A given memory structure includes memory cells, with a given memory cell having an access device and a storage device. The access device may include, for example, a thin film transistor (TFT) structure, and the storage device may include a capacitor. Certain geometric or material parameters of the memory structures can be altered in a graded fashion across any number of tiers to compensate for process effects that occur when fabricating a given tier, which also affect any lower tiers. This may be done to more closely match the performance of the memory arrays across each of the tiers.

Abstract: An integrated circuit (IC) includes a transistor, and a first layer including electrically conductive material. In an example, the first layer is conductively coupled to the transistor. The IC further includes a second layer including electrically conductive material above the first layer. The IC further includes one or more intervening layers between the first and second layers. In an example, the one or more intervening layers include at least a third layer, wherein the third layer includes (i) a first metal, (ii) oxygen, and (iii) one or both of a second metal or an oxide thereof within the third layer. In an example, the first layer, the second layer, and the one or more intervening layers form a metal-insulator-metal (MIM) capacitor. In an example, the MIM capacitor and the transistor, in combination, form a memory cell of a dynamic random access memory (DRAM) array.