Abstract: A method for a host computer to access a target device via a remote extender. The target device is connected to the remote extender, and a target device driver corresponding to the target device is installed on the host computer. The method includes setting up a logic transmission pipe between the host computer and the remote extender with a network connection as the underlying transmission path, and handling an I/O request from the target device driver to access the target device via the logic transmission pipe. The method is used to allow the target device to be treated by the host computer as a local resource. Additionally, the disclosure provides a system for accessing the remote target device and a remote extender thereof.

Abstract: Two types of blue light blocking contact lenses are provided and are formed by curing different compositions. The first composition includes a blue light blocking component formed by mixing or reacting a first hydrophilic monomer and a yellow dye, a first colored dye component formed by mixing or reacting a second hydrophilic monomer and a first colored dye, at least one third hydrophilic monomer, a crosslinker, and an initiator. The first colored dye includes a green dye, a cyan dye, a blue dye, an orange dye, a red dye, a black dye, or combinations thereof. The second composition includes a blue light blocking component, at least one hydrophilic monomer, a crosslinker, and an initiator. The blue light blocking component is formed by mixing or reacting glycerol monomethacrylate and a yellow dye. Further, methods for preparing the above contact lenses are provided.

Abstract: A transistor includes a first semiconductor layer, a second semiconductor layer, a semiconductor nanosheet, a gate electrode and source and drain electrodes. The semiconductor nanosheet is physically connected to the first semiconductor layer and the second semiconductor layer. The gate electrode wraps around the semiconductor nanosheet. The source and drain electrodes are disposed at opposite sides of the gate electrode. The first semiconductor layer surrounds the source electrode, the second semiconductor layer surrounds the drain electrode, and the semiconductor nanosheet is disposed between the source and drain electrodes.

Abstract: A power controller is provided. The power controller has a peak current setting unit utilized for deciding a peak current value according to a divided input voltage and a current limit turn-on time value. The comparator sends a first trigger signal once a current value of a power switch of the power system reaches the peak current value. The turn-on time calculation module defines the number of current limit operations by using the count of first trigger signals received in a calculation time period and then processes a recursive calculation to calculate a turn-on time value according to the current limit turn-on time value, the number of current limit operations, and a target number of current limit operations. The timer transmits a second trigger signal when the set turn-on time value is counted. The switch control module turns off the power switch when receiving one of the first and the second trigger signal.

Abstract: A semiconductor package is provided, which includes: a dielectric layer made of a material used for fabricating built-up layer structures; a conductive trace layer formed on the dielectric layer; a semiconductor chip is mounted on and electrically connected to the conductive trace layer; and an encapsulant formed over the dielectric layer to encapsulate the semiconductor chip and the conductive trace layer. Since a strong bonding is formed between the dielectric layer and the conductive trace layer, the present invention can prevent delamination between the dielectric layer and the conductive trace layer from occurrence, thereby improving reliability and facilitating the package miniaturization by current fabrication methods.

Abstract: A power controller is provided. The power controller has a peak current setting unit utilized for deciding a peak current value according to a divided input voltage and a current limit turn-on time value. The comparator sends a first trigger signal once a current value of a power switch of the power system reaches the peak current value. The turn-on time calculation module defines the number of current limit operations by using the count of first trigger signals received in a calculation time period and then processes a recursive calculation to calculate a turn-on time value according to the current limit turn-on time value, the number of current limit operations, and a target number of current limit operations. The timer transmits a second trigger signal when the set turn-on time value is counted. The switch control module turns off the power switch when receiving one of the first and the second trigger signal.

Abstract: A semiconductor package is provided, which includes: a dielectric layer made of a material used for fabricating built-up layer structures; a conductive trace layer formed on the dielectric layer; a semiconductor chip is mounted on and electrically connected to the conductive trace layer; and an encapsulant formed over the dielectric layer to encapsulate the semiconductor chip and the conductive trace layer. Since a strong bonding is formed between the dielectric layer and the conductive trace layer, the present invention can prevent delamination between the dielectric layer and the conductive trace layer from occurrence, thereby improving reliability and facilitating the package miniaturization by current fabrication methods.