Patents by Inventor Yu Chen Chao

Yu Chen Chao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11270945
    Abstract: A semiconductor device includes a substrate, having a silicon layer on top. A device structure is disposed on the substrate. A dielectric layer is disposed on the substrate and covering over the device structure. The dielectric layer has a first air gap above the device structure. The first air gap is enclosed by a dielectric wall constituting as a part of the dielectric layer and the dielectric wall is disposed on the device structure. The dielectric layer has a second air gap, exposing a top of the device structure and adjacent to the dielectric wall.
    Type: Grant
    Filed: July 31, 2020
    Date of Patent: March 8, 2022
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chu Chun Chang, Yu Chen Chao
  • Publication number: 20210391262
    Abstract: A semiconductor device includes a substrate, having a silicon layer on top. A device structure is disposed on the substrate. A dielectric layer is disposed on the substrate and covering over the device structure. The dielectric layer has a first air gap above the device structure. The first air gap is enclosed by a dielectric wall constituting as a part of the dielectric layer and the dielectric wall is disposed on the device structure. The dielectric layer has a second air gap, exposing a top of the device structure and adjacent to the dielectric wall.
    Type: Application
    Filed: July 31, 2020
    Publication date: December 16, 2021
    Applicant: United Microelectronics Corp.
    Inventors: Chu Chun Chang, Yu Chen Chao