Abstract: An electronic device and a forming method thereof are provided. The electronic device includes a substrate, a metal layer, a first insulating layer, a first conductive layer, a second insulating layer, and a second conductive layer. The metal layer is disposed on the substrate and includes a sensing line and a drain electrode. The first insulating layer is disposed on the metal layer. The first conductive layer is disposed on the first insulating layer and includes a touch electrode. The second insulating layer is disposed on the first conductive layer. The second conductive layer is disposed on the second insulating layer and includes a conductive pattern. The conductive pattern is electrically connected to the sensing line and the touch electrode.

Abstract: A heterojunction bipolar transistor includes a substrate, a semiconductor unit, an electrode unit and a dielectric layer. The semiconductor unit includes a collector layer, a base layer and an emitter layer sequentially formed on the substrate in such order. The electrode unit includes a collector electrode, a base electrode, and an emitter electrode respectively disposed on the collector layer, the base layer and the emitter layer. The dielectric layer covers and cooperates with the emitter layer to define an opening extending therethrough and terminating at the base layer to expose a contact region. The base electrode is disposed on the contact region, extends through the opening, and partially covers the dielectric layer.

Abstract: A semiconductor device includes a substrate, at least one heterojunction bipolar transistor including a semiconductor unit and an electrode unit, an insulation unit, and a heat dissipation unit. The insulation unit covers the substrate and the heterojunction bipolar transistor such that a collector electrode, a base electrode and an emitter electrode of the electrode unit are electrically isolated from one another. The insulation unit is formed with an opening to expose an electrode wire of the emitter electrode. The heat dissipation unit covers the electrode wire and is made of an electrically conductive and heat dissipating material, and has a thickness that is not less than 3 ?m.

Abstract: A heterojunction bipolar transistor includes a substrate, a semiconductor unit, an electrode unit and a dielectric layer. The semiconductor unit includes a collector layer, a base layer and an emitter layer sequentially formed on the substrate in such order. The electrode unit includes a collector electrode, a base electrode, and an emitter electrode respectively disposed on the collector layer, the base layer and the emitter layer. The dielectric layer covers and cooperates with the emitter layer to define an opening extending therethrough and terminating at the base layer to expose a contact region. The base electrode is disposed on the contact region, extends through the opening, and partially covers the dielectric layer.

Abstract: A low-cost and high-compatibility optical pickup including a light source, one set of optical sensors, and a controller. The light source illuminates a string assembled on an instrument. The set of optical sensors corresponding to the light source is provided to sense the shading of the string. The controller supplies the sensed data from the set of optical sensors to a system host for recognition of the melody played on the string. Considering the other strings assembled on the instrument, the optical pickup includes other sets of optical sensors to sense the shading of the other strings which are also illuminated by the light source. The controller also supplies the sensed data of the other sets of optical sensors to the system host for recognition of the melody played on the other strings.