Abstract: A p-GaN high-electron-mobility transistor, includes a substrate, a channel layer stacked on the substrate, a supply layer stacked on the channel layer, a first doped layer stacked on the supply layer, a second doped layer stacked on the first doped layer, and a third doped layer stacked on the second doped layer. A doping concentration of the first doped layer and the doping concentration of the third doped layer are lower than a doping concentration of the second doped layer. A gate is located on the third doped layer, and a source and a drain are electrically connected to the channel layer and the supply layer, respectively.

Abstract: A micro light-emitting device includes a semiconductor epitaxial structure having a bottom surface and a top surface opposite to each other, and including a first cladding layer, an active layer, and a second cladding layer disposed sequentially in such order in a direction from the bottom surface to the top surface. At least one of the first and second cladding layers has a super-lattice structure. The super-lattice structure of the first cladding layer includes first sublayers and second sublayers stacked alternately. Each first sublayer includes Alx1Ga1-x1InP, and each second sublayer includes Alx2Ga1-x2InP, where 0<x1<x2?1. The super-lattice structure of the second cladding layer including third sublayers and fourth sublayers stacked alternately. Each third sublayer includes Alz1Ga1-z1InP, and each fourth sublayer includes Alz2Ga1-z2InP, where 0<z1<z2?1.

Abstract: A system for public and private warehouses management with automated equipment includes a public warehouse having multiple floors and an outer perimeter; an automated guided vehicle operation area located in the outer perimeter of the public warehouse; a transfer station space located out of each side of the public warehouse; an automated guided vehicle space adjacent to one side of the transfer station space away from the public warehouse; a maintenance station space arranged at a predetermined location adjacent to the automated guided vehicle space; an inbound/outbound space adjacent to one side of the automated guided vehicle space away from the public warehouse; and two private warehouses connected with the inbound/outbound space. Each of the private warehouses has multiple floors corresponding to the floors of the public warehouse.

Abstract: An image calibration method applied to a wide-angle image and executed by an image calibration apparatus includes applying primary lens distortion correction for the wide-angle image to generate a corrected image, segmenting an foreground image from the corrected image to generate a background image, applying secondary distortion correction for the foreground image based on the pre-defined object to generate a calibrated foreground image, fusing the background image with the calibrated foreground image to generate a fused image, detecting at least one residual empty pixel not overlapped by the calibrated foreground image within the fused image, and utilizing a machine learning algorithm to fill the at least one residual empty pixel of the fused image by extending the background image to provide an output image. The foreground image contains feature pixels relate to a pre-defined object and the background image has empty pixels corresponding to the foreground image.

Abstract: A color correction method is applied to an image correction apparatus having an image sensor, and includes searching a color deviation area within a detection image, analyzing the detection image to estimate a correction color value of the color deviation area, and calibrating the color deviation area by the correction color value to generate a calibrated detection image without color deviation.

Abstract: An image calibration method applied to a wide-angle image and executed by an image calibration apparatus includes applying primary lens distortion correction for the wide-angle image to generate a corrected image, segmenting an foreground image from the corrected image to generate a background image, applying secondary distortion correction for the foreground image based on the pre-defined object to generate a calibrated foreground image, fusing the background image with the calibrated foreground image to generate a fused image, detecting at least one residual empty pixel not overlapped by the calibrated foreground image within the fused image, and utilizing a machine learning algorithm to fill the at least one residual empty pixel of the fused image by extending the background image to provide an output image. The foreground image contains feature pixels relate to a pre-defined object and the background image has empty pixels corresponding to the foreground image.

Abstract: A color correction method is applied to an image correction apparatus having an image sensor, and includes searching a color deviation area within a detection image, analyzing the detection image to estimate a correction color value of the color deviation area, and calibrating the color deviation area by the correction color value to generate a calibrated detection image without color deviation.

Abstract: A red light emitting diode including an epitaxial stacked layer, a first and a second electrodes and a first and a second electrode pads is provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and a light emitting layer. A main light emitting wavelength of the light emitting layer falls in a red light range. The epitaxial stacked layer has a first side adjacent to the first semiconductor layer and a second side adjacent to the second semiconductor layer. The first and the second electrodes are respectively electrically connected to the first-type and the second-type semiconductor layers, and respectively located to the first and the second sides. The first and a second electrode pads are respectively disposed on the first and the second electrodes and respectively electrically connected to the first and the second electrodes. The first and the second electrode pads are located at the first side of the epitaxial stacked layer.

Abstract: A light emitting diode (LED) including an epitaxial stacked layer, first and second reflective layers which are disposed at two sides of the epitaxial stacked layer, a current conducting layer and first and second electrodes and a manufacturing thereof are provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and an active layer. A main light emitting surface with a light transmittance >0% and ?10% is formed on one of the two reflective layers. The current conducting layer contacts the second-type semiconductor layer. The first electrode is electrically connected to the first-type semiconductor layer. The second electrode is electrically connected to the second-type semiconductor layer via the current conducting layer. A contact scope of the current conducting layer and the second-type semiconductor layer is served as a light-emitting scope overlapping the two layers, but not overlapping the two electrodes.

Abstract: A light emitting diode chip including an epitaxy stacked layer, first and second electrodes and a first reflective layer is provided. The epitaxy stacked layer includes first-type and second-type semiconductor layers and a light-emitting layer. The first and second electrodes are respectively electrically connected to the first-type and second-type semiconductor layers. An orthogonal projection of the light-emitting layer on the first-type semiconductor layer is misaligned with an orthogonal projection of the first electrode on the first-type semiconductor layer. The first reflective layer is disposed on the epitaxy stacked layer, the first and second electrodes. An orthogonal projection of the first reflective layer on the second-type semiconductor layer is misaligned with an orthogonal projection of the second electrode on the second-type semiconductor layer. Furthermore, a light emitting diode device is also provided.

Abstract: A power device and an operating method thereof are provided. The power device comprises a communication interface and a control circuit. The control circuit is configured to connect a network through the communication interface, and to execute a web server program to provide a web-based user interface. The web-based user interface is configured to provide a plurality of web pages, and the web pages are configured to present a plurality of different related information of the power device. The web-based user interface is further configured to provide a virtual button. When the control circuit determines that the virtual button is clicked once, the control circuit collects the related information from different addresses corresponding to the related information in a memory space, and packages the collected related information as a single file, so as to perform a follow-up process on this single file.

Abstract: A power device and an operating method thereof are provided. The power device comprises a communication interface and a control circuit. The control circuit is configured to connect a network through the communication interface, and to execute a web server program to provide a web-based user interface. The web-based user interface is configured to provide a plurality of web pages, and the web pages are configured to present a plurality of different related information of the power device. The web-based user interface is further configured to provide a virtual button. When the control circuit determines that the virtual button is clicked once, the control circuit collects the related information from different addresses corresponding to the related information in a memory space, and packages the collected related information as a single file, so as to perform a follow-up process on this single file.

Abstract: A red light emitting diode including an epitaxial stacked layer, a first and a second electrodes and a first and a second electrode pads is provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and a light emitting layer. A main light emitting wavelength of the light emitting layer falls in a red light range. The epitaxial stacked layer has a first side adjacent to the first semiconductor layer and a second side adjacent to the second semiconductor layer. The first and the second electrodes are respectively electrically connected to the first-type and the second-type semiconductor layers, and respectively located to the first and the second sides. The first and a second electrode pads are respectively disposed on the first and the second electrodes and respectively electrically connected to the first and the second electrodes. The first and the second electrode pads are located at the first side of the epitaxial stacked layer.

Abstract: A light emitting diode and manufacturing method thereof are provided. The light emitting diode includes a first-type semiconductor layer, a light emitting layer, a second-type semiconductor layer, a first metal layer, a first current conducting layer, a first bonding layer and a second current conducting layer. The light emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer. The first metal layer is located on and electrically connected to the first-type semiconductor layer. The first metal layer is located between the first current conducting layer and the first-type semiconductor layer. The first current conducting layer is located between the first bonding layer and the first metal layer. The first current conducting layer is connected to the first-type semiconductor layer by the first current conducting layer and the first metal layer. The first bonding layer has through holes overlapped with the first metal layer.

Abstract: A light emitting diode (LED) including an epitaxial stacked layer, first and second reflective layers which are disposed at two sides of the epitaxial stacked layer, a current conducting layer and first and second electrodes and a manufacturing thereof are provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and an active layer. A main light emitting surface with a light transmittance >0% and ?10% is formed on one of the two reflective layers. The current conducting layer contacts the second-type semiconductor layer. The first electrode is electrically connected to the first-type semiconductor layer. The second electrode is electrically connected to the second-type semiconductor layer via the current conducting layer. A contact scope of the current conducting layer and the second-type semiconductor layer is served as a light-emitting scope overlapping the two layers, but not overlapping the two electrodes.

Abstract: A power output control module for power distribution is installed inside a power distributor that is connected to an AC power source and multiple electronic devices to control the AC power outputted to the electronic devices. The power output control module continuously detects whether the AC power inputted is normal. When the AC power source is disconnected by accident, a latch relay is controlled to switch to be open, so that the AC power source and the electronic devices are disconnected. This prevents the instantaneous surge current from damaging the electronic devices when the AC power source resumes its normal output and also increases the safety and reliability of electronic devices.

Abstract: A light emitting diode chip including an epitaxy stacked layer, first and second electrodes and a first reflective layer is provided. The epitaxy stacked layer includes first-type and second-type semiconductor layers and a light-emitting layer. The first and second electrodes are respectively electrically connected to the first-type and second-type semiconductor layers. An orthogonal projection of the light-emitting layer on the first-type semiconductor layer is misaligned with an orthogonal projection of the first electrode on the first-type semiconductor layer. The first reflective layer is disposed on the epitaxy stacked layer, the first and second electrodes. An orthogonal projection of the first reflective layer on the second-type semiconductor layer is misaligned with an orthogonal projection of the second electrode on the second-type semiconductor layer. Furthermore, a light emitting diode device is also provided.

Abstract: A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.

Abstract: A power distribution unit comprising at least two conductors, a plurality of outlets, a plurality of indicator lights, an AC-DC conversion circuit, and a control circuit is provided. Each outlet is electrically coupled to two of the conductors. Each indicator light corresponds to one of the outlets. The input of the AC-DC conversion circuit is electrically coupled to two of the conductors. The control circuit is electrically coupled to the indicator lights and the output of the AC-DC conversion circuit. The control circuit is configured for sequentially driving the indicator lights, and is configured for controlling, according to the group information of each grouped outlet, a corresponding indicator light to display a corresponding color of a group to which the grouped outlet belongs.

Abstract: A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.