Patents by Inventor Yu-Chen Su

Yu-Chen Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for introducing carbon to a semiconductor structure and structures formed thereby
    Patent number: 9525024
    Abstract: An embodiment is a method comprising diffusing carbon through a surface of a substrate, implanting carbon through the surface of the substrate, and annealing the substrate after the diffusing the carbon and implanting the carbon through the surface of the substrate. The substrate comprises a first gate, a gate spacer, an etch stop layer, and an inter-layer dielectric. The first gate is over a semiconductor substrate. The gate spacer is along a sidewall of the first gate. The etch stop layer is on a surface of the gate spacer and over a surface of the semiconductor substrate. The inter-layer dielectric is over the etch stop layer. The surface of the substrate comprises a surface of the inter-layer dielectric.
    Type: Grant
    Filed: July 21, 2015
    Date of Patent: December 20, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Chen Su, Huang-Ming Chen, Chun-Feng Nieh, Pei-Chao Su
  • Methods for Introducing Carbon to a Semiconductor Structure and Structures Formed Thereby
    Publication number: 20150325644
    Abstract: An embodiment is a method comprising diffusing carbon through a surface of a substrate, implanting carbon through the surface of the substrate, and annealing the substrate after the diffusing the carbon and implanting the carbon through the surface of the substrate. The substrate comprises a first gate, a gate spacer, an etch stop layer, and an inter-layer dielectric. The first gate is over a semiconductor substrate. The gate spacer is along a sidewall of the first gate. The etch stop layer is on a surface of the gate spacer and over a surface of the semiconductor substrate. The inter-layer dielectric is over the etch stop layer. The surface of the substrate comprises a surface of the inter-layer dielectric.
    Type: Application
    Filed: July 21, 2015
    Publication date: November 12, 2015
    Inventors: Yu-Chen Su, Huang-Ming Chen, Chun-Feng Nieh, Pei-Chao Su
  • Methods for introducing carbon to a semiconductor structure
    Patent number: 9105570
    Abstract: An embodiment is a method comprising diffusing carbon through a surface of a substrate, implanting carbon through the surface of the substrate, and annealing the substrate after the diffusing the carbon and implanting the carbon through the surface of the substrate. The substrate comprises a first gate, a gate spacer, an etch stop layer, and an inter-layer dielectric. The first gate is over a semiconductor substrate. The gate spacer is along a sidewall of the first gate. The etch stop layer is on a surface of the gate spacer and over a surface of the semiconductor substrate. The inter-layer dielectric is over the etch stop layer. The surface of the substrate comprises a surface of the inter-layer dielectric.
    Type: Grant
    Filed: July 13, 2012
    Date of Patent: August 11, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Chen Su, Huang-Ming Chen, Chun-Feng Nieh, Pei-Chao Su
  • Methods for Introducing Carbon to a Semiconductor Structure and Structures Formed Thereby
    Publication number: 20140015104
    Abstract: An embodiment is a method comprising diffusing carbon through a surface of a substrate, implanting carbon through the surface of the substrate, and annealing the substrate after the diffusing the carbon and implanting the carbon through the surface of the substrate. The substrate comprises a first gate, a gate spacer, an etch stop layer, and an inter-layer dielectric. The first gate is over a semiconductor substrate. The gate spacer is along a sidewall of the first gate. The etch stop layer is on a surface of the gate spacer and over a surface of the semiconductor substrate. The inter-layer dielectric is over the etch stop layer. The surface of the substrate comprises a surface of the inter-layer dielectric.
    Type: Application
    Filed: July 13, 2012
    Publication date: January 16, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Chen Su, Huang-Ming Chen, Chun-Feng Nieh, Pei-Chao Su