Abstract: A resonant converter including a full-bridge switch circuit, a resonant circuit, a transformer, a rectifier circuit, a current sensor and a controller is provided. The full-bridge switch circuit includes switches. The resonant circuit is electrically connected to the full-bridge switch circuit and includes a resonant inductor. The transformer includes primary and secondary windings, and the primary winding is electrically connected to the resonant circuit. The rectifier circuit is electrically connected to the secondary winding. The current sensor is electrically connected to the resonant circuit. When a current flowing through the resonant inductor passes through the current sensor, the current sensor generates a current differential signal correspondingly.

Abstract: A charging system includes a power input part, an inverter, a DC bus, at least one charging device, a first bidirectional energy storage module, a second bidirectional energy storage module and an intelligent controller. The charging device includes a DC/DC converter and a charging gun. A first bidirectional DC/DC converter of the first bidirectional energy storage module receives and converts the DC power from the inverter for charging a first battery, or converts a first storage electric energy of the first battery for the charging device. A second bidirectional DC/DC converter of the second bidirectional energy storage module receives and converts the electric energy outputted by the DC/DC converter of the charging device for charging a second battery, or converts a second storage electric energy of the second battery for the charging device. The intelligent controller controls operations of the first bidirectional DC/DC converter and the second bidirectional DC/DC converter.

Abstract: A charging system includes a power input part, an inverter, a DC bus, at least one charging device, a first bidirectional energy storage module, a second bidirectional energy storage module and an intelligent controller. The charging device includes a DC/DC converter and a charging gun. A first bidirectional DC/DC converter of the first bidirectional energy storage module receives and converts the DC power from the inverter for charging a first battery, or converts a first storage electric energy of the first battery for the charging device. A second bidirectional DC/DC converter of the second bidirectional energy storage module receives and converts the electric energy outputted by the DC/DC converter of the charging device for charging a second battery, or converts a second storage electric energy of the second battery for the charging device. The intelligent controller controls operations of the first bidirectional DC/DC converter and the second bidirectional DC/DC converter.

Abstract: A charging system includes a power input part, an inverter, a DC bus, at least one charging device, a first bidirectional energy storage module, a second bidirectional energy storage module and an intelligent controller. The charging device includes a DC/DC converter and a charging gun. A first bidirectional DC/DC converter of the first bidirectional energy storage module receives and converts the DC power from the inverter for charging a first battery, or converts a first storage electric energy of the first battery for the charging device. A second bidirectional DC/DC converter of the second bidirectional energy storage module receives and converts the electric energy outputted by the DC/DC converter of the charging device for charging a second battery, or converts a second storage electric energy of the second battery for the charging device. The intelligent controller controls operations of the first bidirectional DC/DC converter and the second bidirectional DC/DC converter.

Abstract: An ribonucleic acid (RNA) detection device is disclosed, comprising a case, a substrate, at least one display component, and a processing circuit board, wherein one plane on the substrate includes an RNA detection panel and a metal mask cover covering the RNA detection panel, and, when a specimen liquid is dropped onto the RNA detection panel through the detection hole of the case and the concave opening of the metal mask cover, the signal generated by the contact of the specimen liquid with the RNA detection panel is received via the sensor circuit board thus generating the specimen signal determination value which then transferred to the processing circuit board so that the processing circuit board determines whether the specimen liquid includes the virus based on the specimen signal determination value.

Abstract: This invention discloses a light emitting element to solve the problem of lattice mismatch and inequality of electron holes and electrons of the conventional light emitting elements. The light emitting element comprises a gallium nitride layer, a gallium nitride pyramid, an insulating layer, a first electrode and a second electrode. The gallium nitride pyramid contacts with the gallium nitride layer, with a c-axis of the gallium nitride layer opposite in direction to a c-axis of the gallium nitride pyramid, and with an M-plane of the gallium nitride layer parallel to an M-plane of the gallium nitride pyramid, with broken bonds at the mounting face of the gallium nitride layer and the larger end face of the gallium nitride pyramid welded with each other, with the gallium nitride layer and the gallium nitride pyramid being used as a p-type semiconductor and an n-type semiconductor respectively.

Abstract: This invention discloses a light emitting element to solve the problem of lattice mismatch and inequality of electron holes and electrons of the conventional light emitting elements. The light emitting element comprises a gallium nitride layer, a gallium nitride pyramid, an insulating layer, a first electrode and a second electrode. The gallium nitride pyramid contacts with the gallium nitride layer, with a c-axis of the gallium nitride layer opposite in direction to a c-axis of the gallium nitride pyramid, and with an M-plane of the gallium nitride layer parallel to an M-plane of the gallium nitride pyramid, with broken bonds at the mounting face of the gallium nitride layer and the larger end face of the gallium nitride pyramid welded with each other, with the gallium nitride layer and the gallium nitride pyramid being used as a p-type semiconductor and an n-type semiconductor respectively.

Abstract: A method for manufacturing a light emitting element is disclosed. A larger end face of a gallium nitride pyramid contacts with a mounting face of a gallium nitride layer disposed on a substrate, with c-axes of the gallium nitride layer and the gallium nitride pyramid coaxial to each other, and with M-planes of the gallium nitride layer and the gallium nitride pyramid parallel to each other. Broken bonds at contact faces of the gallium nitride pyramid and of the gallium nitride layer weld with each other after heating and cooling. A portion of an insulating layer coated on the gallium nitride pyramid and is removed to form an electrically conductive portion on which a first electrode is disposed. A portion of the insulating layer coated on the gallium nitride layer is removed to form another electrically conductive portion on which a second electrode is disposed.

Abstract: A light emitting element and its manufacturing method are disclosed. A larger end face of a gallium nitride pyramid contacts with a mounting face of a gallium nitride layer disposed on a substrate, with c-axes of the gallium nitride layer and the gallium nitride pyramid coaxial to each other, and with M-planes of the gallium nitride layer and the gallium nitride pyramid parallel to each other. Broken bonds at contact faces of the gallium nitride pyramid and of the gallium nitride layer weld with each other after heating and cooling. A portion of an insulating layer coated on the gallium nitride pyramid and is removed to form an electrically conductive portion on which a first electrode is disposed. A portion of the insulating layer coated on the gallium nitride layer is removed to form another electrically conductive portion on which a second electrode is disposed.

Abstract: An epitaxy structure of a light emitting element includes a gallium nitride substrate, an N-type gallium nitride layer, a quantum well unit, and a P-type gallium nitride layer. The gallium nitride substrate includes a gallium nitride buffer layer, a gallium nitride hexagonal prism, and a gallium nitride hexagonal pyramid. The gallium nitride hexagonal prism extends from the gallium nitride buffer layer along an axis. The gallium nitride hexagonal pyramid extends from the gallium nitride hexagonal prism along the axis and gradually expands to form a hexagonal frustum. The N-type gallium nitride layer is located on the gallium nitride hexagonal pyramid. The quantum well unit includes an indium gallium nitride layer located on the N-type gallium nitride layer and a gallium nitride layer located on the indium gallium nitride layer. The P-type gallium nitride layer is located on the gallium nitride layer.

Abstract: An epitaxy structure of a light emitting element includes a gallium nitride substrate, an N-type gallium nitride layer, a quantum well unit, and a P-type gallium nitride layer. The gallium nitride substrate includes a gallium nitride buffer layer, a gallium nitride hexagonal prism, and a gallium nitride hexagonal pyramid. The gallium nitride hexagonal prism extends from the gallium nitride buffer layer along an axis. The gallium nitride hexagonal pyramid extends from the gallium nitride hexagonal prism along the axis and gradually expands to form a hexagonal frustum. The N-type gallium nitride layer is located on the gallium nitride hexagonal pyramid. The quantum well unit includes an indium gallium nitride layer located on the N-type gallium nitride layer and a gallium nitride layer located on the indium gallium nitride layer. The P-type gallium nitride layer is located on the gallium nitride layer.

Abstract: An III-nitride quantum well structure includes a GaN base, an InGaN layer and an InGaN covering layer. The GaN base includes a GaN buffering layer, a GaN post extending from the GaN buffering layer, and a GaN pyramid gradually expanding from the GaN post to form a mounting surface. The InGaN layer includes first and second coupling faces. The first coupling face is coupled with the mounting surface. The GaN covering layer includes first and second coupling faces. The first coupling face of the GaN covering layer is coupled with the second coupling face of the InGaN layer.

Abstract: An III-nitride quantum well structure includes a GaN base, an InGaN layer and an InGaN covering layer. The GaN base includes a GaN buffering layer, a GaN post extending from the GaN buffering layer, and a GaN pyramid gradually expanding from the GaN post to form a mounting surface. The InGaN layer includes first and second coupling faces. The first coupling face is coupled with the mounting surface. The GaN covering layer includes first and second coupling faces. The first coupling face of the GaN covering layer is coupled with the second coupling face of the InGaN layer.

Abstract: An III-nitride quantum well structure includes a GaN base, an InGaN layer and an InGaN covering layer. The GaN base includes a GaN buffering layer, a GaN post extending from the GaN buffering layer, and a GaN pyramid gradually expanding from the GaN post to form a mounting surface. The InGaN layer includes first and second coupling faces. The first coupling face is coupled with the mounting surface. The GaN covering layer includes first and second coupling faces. The first coupling face of the GaN covering layer is coupled with the second coupling face of the InGaN layer. A method for manufacturing the III-nitride quantum well structure and a light-emitting unit having a plurality of III-nitride quantum well structures are also proposed.

Abstract: A homo-material heterophased quantum well includes a first structural layer, a second structural layer and a third structural layer. The second structural layer is sandwiched between the first and third structural layers. The first structural layer, second structural layer and third structural layer are formed by growing atoms of a single material in a single growth direction. The energy gap of the second structural layer is smaller than that of the first and third structural layers.

Abstract: A manufacturing method for three-dimensional GaN epitaxial structure comprises a disposing step, in which a substrate of LiAlO2 and a source metal of Ga are disposed inside an vacuum chamber. An exposing step is importing N ions in plasma state and generated by a nitrogen source into the chamber. A heating step is heating up the source metal to generate Ga vapor. A growing step is forming a three-dimensional GaN epitaxial structure with hexagonal micropyramid or hexagonal rod having a broadened disk-like surface on the substrate by reaction between the Ga vapor and the plasma state of N ions.

Abstract: An III-nitride quantum well structure includes a GaN base, an InGaN layer and an InGaN covering layer. The GaN base includes a GaN buffering layer, a GaN post extending from the GaN buffering layer, and a GaN pyramid gradually expanding from the GaN post to form a mounting surface. The InGaN layer includes first and second coupling faces. The first coupling face is coupled with the mounting surface. The GaN covering layer includes first and second coupling faces. The first coupling face of the GaN covering layer is coupled with the second coupling face of the InGaN layer. A method for manufacturing the III-nitride quantum well structure and a light-emitting unit having a plurality of III-nitride quantum well structures are also proposed.

Abstract: An electronic device includes an audio jack, a power supply unit, a determining circuit, and an executing circuit. The audio jack may be arranged for transmitting an audio input signal, and the electronic device may be configured to connect with an audio accessory via the audio jack. When the audio accessory may be connected to the electronic device, the power supply unit provides a first voltage to the audio jack and a second voltage. The determining circuit determines whether to trigger an interrupt request according to the second voltage and a third voltage, wherein the third voltage may be coupled to the audio jack and may be generated according to the first voltage. The executing circuit may be coupled to the determining circuit, for determining whether to execute a corresponding function according to the third voltage when the interrupt request may be received.

Abstract: A homo-material heterophased quantum well includes a first structural layer, a second structural layer and a third structural layer. The second structural layer is sandwiched between the first and third structural layers. The first structural layer, second structural layer and third structural layer are formed by growing atoms of a single material in a single growth direction. The energy gap of the second structural layer is smaller than that of the first and third structural layers.

Abstract: An electronic device includes an audio jack, a power supply unit, a determining circuit, and an executing circuit. The audio jack may be arranged for transmitting an audio input signal, and the electronic device may be configured to connect with an audio accessory via the audio jack. When the audio accessory may be connected to the electronic device, the power supply unit provides a first voltage to the audio jack and a second voltage. The determining circuit determines whether to trigger an interrupt request according to the second voltage and a third voltage, wherein the third voltage may be coupled to the audio jack and may be generated according to the first voltage. The executing circuit may be coupled to the determining circuit, for determining whether to execute a corresponding function according to the third voltage when the interrupt request may be received.