Abstract: A method for manufacturing a semiconductor structure includes disposing a wafer in a processing chamber, in which the wafer is laterally surrounded by a focus ring. A plasma is formed in the processing chamber to process the wafer. A thickness of the focus ring is detected. A plasma direction of the plasma over a peripheral region of the wafer is adjusted according to the thickness of the focus ring.

Abstract: A method of forming a semiconductor device includes providing a first isolation feature in a substrate, where the first isolation feature defines and isolates a cathode region of a Schottky barrier diode (SBD) from an anode region of the SBD. In some embodiments, the method further includes forming a patterned resist protective oxide (RPO) layer over the first isolation feature. Thereafter, the method further includes forming a first metal contact that extends through the patterned RPO layer and extends into the first isolation feature.

Abstract: A container sealing device includes a platform slidable and movable in and out of a casing and having an opening for receiving a container to be sealed. A lever and a support device are slidably attached to the platform, and movable up and down relative to the platform, to support the container. The platform includes a peripheral bulge having a peripheral channel to form an inner peripheral wall which may support an outer flange of the container, and an outer peripheral wall having an orifice for supplying a food preserving agent to the container, and an aperture for vacuuming the container. The support device may be adjusted relative to the lever, to support containers of different heights or depths.