Abstract: A device includes gate spacers over a substrate, and a gate structure between the gate spacers. The gate structure includes an interfacial layer over the substrate, a metal oxide layer over the interfacial layer, a metal oxide layer over the interfacial layer, a first metal nitride layer over the metal oxide layer, a second metal nitride over the first metal nitride layer, and a tungsten-containing material interposing the first metal nitride layer and the second metal nitride layer.

Abstract: A measuring method and system for body-shaped data are provided. The measuring method comprises: performing a feature extraction on an apparel image to obtain a plurality of apparel feature points by a feature positioning module; performing a contour extraction on the apparel image to obtain an apparel boundary by an image segmentation module; calculating at least one shift value of the apparel feature points relative to the apparel boundary based on the apparel feature points and the apparel boundary by a processing module; correcting at least one of the apparel feature points according to the at least one shift value by the processing module, and projecting the corrected at least one of the apparel feature points to a three-dimensional model and obtaining at least one body-shaped data according to the apparel feature points on the three-dimensional model by the processing module.

Abstract: A device includes a pair of gate spacers on a substrate, and a gate structure on the substrate and between the gate spacers. The gate structure includes an interfacial layer, a metal oxide layer, a nitride-containing layer, a tungsten-containing layer, and a metal compound layer. The interfacial layer is over the substrate. The metal oxide layer is over the interfacial layer. The nitride-containing layer is over the metal oxide layer. The tungsten-containing layer is over the nitride-containing layer. The metal compound layer is over the tungsten-containing layer. The metal compound layer has a different material than a material of the tungsten-containing layer.

Abstract: A method includes removing a dummy gate to form a gate trench. A gate dielectric layer is deposited over a bottom and sidewalls of the gate trench. A first work function metal layer is deposited over the gate dielectric layer. A dummy layer is deposited over the first work function metal layer. An impurity is introduced into the dummy layer and the first work function metal layer after the dummy layer is deposited. The dummy layer is removed after the impurity is introduced into the dummy layer and the first work function metal layer. The gate trench is filled with a conductive material after the dummy layer is removed.

Abstract: A device includes a pair of gate spacers on a substrate, and a gate structure on the substrate and between the gate spacers. The gate structure includes an interfacial layer, a metal oxide layer, a nitride-containing layer, a tungsten-containing layer, and a metal compound layer. The interfacial layer is over the substrate. The metal oxide layer is over the interfacial layer. The nitride-containing layer is over the metal oxide layer. The tungsten-containing layer is over the nitride-containing layer. The metal compound layer is over the tungsten-containing layer. The metal compound layer has a different material than a material of the tungsten-containing layer.

Abstract: A method for generating goods modeling data comprises obtaining a platform image associated with a platform, a plurality of first goods images and a plurality of second goods images, wherein the first goods images and the second goods images correspond to different viewing angles respectively, and an image synthesis processing is performed according to the platform image and at least one of the first goods images and the second goods images to generate a synthesized image. The synthesized image includes a plurality of adjacent or partially overlapping image areas which correspond to at least many of the viewing angles. The image areas include a first and a second image areas. The first image area includes one of the first goods images or one of the second goods images. The second image area includes one of the first goods images or one of the second goods images.

Abstract: A method for generating goods modeling data comprises obtaining a platform image associated with a platform, a plurality of first goods images and a plurality of second goods images, wherein the first goods images and the second goods images correspond to different viewing angles respectively, and an image synthesis processing is performed according to the platform image and at least one of the first goods images and the second goods images to generate a synthesized image. The synthesized image includes a plurality of adjacent or partially overlapping image areas which correspond to at least many of the viewing angles. The image areas include a first and a second image areas. The first image area includes one of the first goods images or one of the second goods images. The second image area includes one of the first goods images or one of the second goods images.

Abstract: A method includes removing a dummy gate to form a gate trench. A gate dielectric layer is deposited over a bottom and sidewalls of the gate trench. A first work function metal layer is deposited over the gate dielectric layer. A dummy layer is deposited over the first work function metal layer. An impurity is introduced into the dummy layer and the first work function metal layer after the dummy layer is deposited. The dummy layer is removed after the impurity is introduced into the dummy layer and the first work function metal layer. The gate trench is filled with a conductive material after the dummy layer is removed.

Abstract: A method includes removing a dummy gate to form a gate trench. A gate dielectric layer is deposited over a bottom and sidewalls of the gate trench. A first work function metal layer is deposited over the gate dielectric layer. A dummy layer is deposited over the first work function metal layer. An impurity is introduced into the dummy layer and the first work function metal layer after the dummy layer is deposited. The dummy layer is removed after the impurity is introduced into the dummy layer and the first work function metal layer. The gate trench is filled with a conductive material after the dummy layer is removed.

Abstract: A method includes removing a dummy gate to form a gate trench. A gate dielectric layer is deposited over a bottom and sidewalls of the gate trench. A first work function metal layer is deposited over the gate dielectric layer. A dummy layer is deposited over the first work function metal layer. An impurity is introduced into the dummy layer and the first work function metal layer after the dummy layer is deposited. The dummy layer is removed after the impurity is introduced into the dummy layer and the first work function metal layer. The gate trench is filled with a conductive material after the dummy layer is removed.

Abstract: A method is provided. The method includes the following operations. A dielectric layer is deposited over a substrate. Then, a first work function metal layer is deposited over the dielectric layer. Next, a dummy layer is deposited over the first work function metal layer. Afterwards, an impurity is introduced into the first work function metal layer. Then, the dummy layer is etched. Next, a second work function metal layer is deposited over the first work function metal layer.

Abstract: A method is provided. The method includes the following operations. A dielectric layer is deposited over a substrate. Then, a first work function metal layer is deposited over the dielectric layer. Next, a dummy layer is deposited over the first work function metal layer. Afterwards, an impurity is introduced into the first work function metal layer. Then, the dummy layer is etched. Next, a second work function metal layer is deposited over the first work function metal layer.

Abstract: A handover method, system and user equipment are provided. The handover method includes establishing a voice call between a caller device and a callee device in a first network; detecting first-link performance between the caller device and the first network and detecting second-link performance between the caller device and a second network; detecting third-link performance between the callee device and the second network; and determining whether to turn over from the first network to the second network and start a standby call between the caller device and the callee device which has been established in the second network, according to the first-link performance, the second-link performance and the third-link performance, wherein the first network and the second network are respectively a circuit-switched network and a packet-switched network or respectively a packet-switched network and a circuit-switched network.

Abstract: The hinge is made with a metal injection molding process from an alloy having at least: from 4 to 32 wt % Mn, from 16 to 37 wt % Cr, and from Fe that fills up the rest of the percentage.

Abstract: The hinge in accordance with the present invention is made with a metal injection molding process from an alloy having at least: from 4 to 32 wt % Mn, from 16 to 37 wt % Cr and Fe that fills up the rest percentage.