Patents by Inventor Yu-Chi Wang

Yu-Chi Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12224212
    Abstract: A semiconductor structure has a frontside and a backside. The semiconductor structure includes an isolation structure at the backside; one or more transistors at the frontside, wherein the one or more transistors have source/drain epitaxial features; two metal plugs through the isolation structure and contacting two of the source/drain electrodes from the backside; and a dielectric liner filling a space between the two metal plugs, wherein the dielectric liner partially or fully surrounds an air gap between the two metal plugs.
    Type: Grant
    Filed: May 25, 2023
    Date of Patent: February 11, 2025
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Yuan Chen, Huan-Chieh Su, Cheng-Chi Chuang, Yu-Ming Lin, Chih-Hao Wang
  • Patent number: 12224339
    Abstract: An HEMT includes an aluminum gallium nitride layer. A gallium nitride layer is disposed below the aluminum gallium nitride layer. A zinc oxide layer is disposed under the gallium nitride layer. A source electrode and a drain electrode are disposed on the aluminum gallium nitride layer. A gate electrode is disposed on the aluminum gallium nitride layer and between the drain electrode and the source electrode.
    Type: Grant
    Filed: May 2, 2022
    Date of Patent: February 11, 2025
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
  • Publication number: 20250046623
    Abstract: The application relates to a method for manufacturing an electronic device, and in particular, to a method for manufacturing an electronic device with a carrier substrate. The method includes: providing a carrier substrate; forming a first base layer on the carrier substrate; forming a working unit on the first base layer, performing a detection step on the working unit to identify whether a defect is present, wherein the detection step includes automated optical inspection (AOI), electrical detection, or a combination thereof; and repairing the electronic device.
    Type: Application
    Filed: October 18, 2024
    Publication date: February 6, 2025
    Inventors: Yeong-E CHEN, Cheng-En CHENG, Yu-Ting LIU, Cheng-Chi WANG
  • Publication number: 20250047948
    Abstract: Interaction is created between users and streamers even when the users give gifts to the streamers outside live-streams. Provided is a terminal of a user, which includes: one or more processors; and memory storing one or more computer programs configured to be executed by the one or more processors. The one or more computer programs include instructions for: receiving, from the user, an instruction to use a gift for a streamer while the user is not participating in a live-stream of the streamer; and causing an output unit to output an effect corresponding to the use of the gift by the user while the streamer is live-streaming.
    Type: Application
    Filed: October 21, 2024
    Publication date: February 6, 2025
    Inventors: Yu-Shan YANG, Yung-Chi HSU, Sheng-Kai HSU, Ching-Jan WANG, Yun-An LIN
  • Publication number: 20250041227
    Abstract: Provided herein are heterocyclic derivative compounds and tablet pharmaceutical compositions comprising said compounds that are useful for the treatment of retinal binding protein (RBP4) related diseases, such as macular degeneration and the like.
    Type: Application
    Filed: November 22, 2022
    Publication date: February 6, 2025
    Inventors: Irene Cheng-Chi WANG, Tom Yu-Hsin WANG
  • Publication number: 20240421253
    Abstract: An optoelectronic semiconductor device includes a substrate, a first type semiconductor structure located on the substrate, a second type semiconductor structure located on the first type semiconductor structure, an active structure located between the first type semiconductor structure and the second type semiconductor structure, a plurality of contact portions disposed between the first type semiconductor structure and the substrate, and a first conductive oxide layer, a second conductive oxide layer, a first insulating layer and a second insulating layer. The plurality of contact portions is separated from each other, and one of them includes a semiconductor and has a side wall. The first conductive oxide layer contacts the contact portion, and the second conductive oxide layer contacts the first conductive oxide layer. The first insulating layer contacts the side wall. The second insulating layer is disposed between the first insulating layer and the second conductive oxide layer.
    Type: Application
    Filed: August 26, 2024
    Publication date: December 19, 2024
    Inventors: Chung-Hao WANG, Yu-Chi WANG, Yi-Ming CHEN, Yi-Yang CHIU, Chun-Yu LIN
  • Publication number: 20240405054
    Abstract: A monolithic array chip comprises a first semiconductor layer; a common electrode located on the first semiconductor layer; a first light-emitting unit with a first electrode located on the first semiconductor layer; a second light-emitting unit with a second electrode located on the first semiconductor layer; a third light-emitting unit with a third electrode located on the first semiconductor layer, wherein the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit are separated from each other by a trench.
    Type: Application
    Filed: May 30, 2024
    Publication date: December 5, 2024
    Inventors: Min-Hsun HSIEH, Chih-Ming WANG, Jan-Way CHIEN, Hui-Ching FENG, Yu-Chi WANG, Hsia-Ching CHENG
  • Patent number: 12144595
    Abstract: The present invention provides a wearable device for monitoring blood-pressure.
    Type: Grant
    Filed: August 10, 2020
    Date of Patent: November 19, 2024
    Assignee: Cardio Ring Technologies, Inc.
    Inventors: Kuang-Fu Chang, Yu-Chi Wang, Leng-Chun Chen, Jun-Ming Chen, Wen-Pin Shih
  • Patent number: 12074252
    Abstract: An optoelectronic semiconductor device includes a substrate, a first type semiconductor structure, a second type semiconductor structure, an active structure and a contact structure. The first type semiconductor structure is located on the substrate and has a first protrusion part with a first thickness and a platform part with a second thickness. The second type semiconductor structure is located on the first type semiconductor structure. The active structure is between the first type semiconductor structure and the second type semiconductor structure. The contact structure is disposed between the first type semiconductor structure and the substrate. The second thickness of the platform part is in a range of 0.01 ?m to 1 ?m.
    Type: Grant
    Filed: September 19, 2022
    Date of Patent: August 27, 2024
    Assignee: EPISTAR CORPORATION
    Inventors: Chung-Hao Wang, Yu-Chi Wang, Yi-Ming Chen, Yi-Yang Chiu, Chun-Yu Lin
  • Patent number: 12046639
    Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.
    Type: Grant
    Filed: February 28, 2022
    Date of Patent: July 23, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
  • Patent number: 12046640
    Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.
    Type: Grant
    Filed: April 17, 2023
    Date of Patent: July 23, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
  • Patent number: 11955519
    Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.
    Type: Grant
    Filed: April 17, 2023
    Date of Patent: April 9, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
  • Patent number: 11904581
    Abstract: A method for preparing a bifunctional film, including: (a) drying a first polymer solution to form a film to form an anti-adhesion layer, and (b) drying a second polymer solution over the anti-adhesion layer to form a film to form an attachment layer. The first polymer solution includes a first hydrophobic solution and a first hydrophilic solution, and in the first polymer solution, the weight ratio of the solute of the first hydrophobic solution to the solute of the first hydrophilic solution is 1:0.01-1. Moreover, the second polymer solution is composed of a second hydrophilic solution.
    Type: Grant
    Filed: August 11, 2022
    Date of Patent: February 20, 2024
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Hsin-Hsin Shen, Yu-Chi Wang, Ming-Chia Yang, Yu-Bing Liou, Wei-Hong Chang, Yun-Han Lin, Hsin-Yi Hsu, Yun-Chung Teng, Chia-Jung Lu, Yi-Hsuan Lee, Jian-Wei Lin, Kun-Mao Kuo, Ching-Mei Chen
  • Publication number: 20230268397
    Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.
    Type: Application
    Filed: April 17, 2023
    Publication date: August 24, 2023
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
  • Publication number: 20230253457
    Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.
    Type: Application
    Filed: April 17, 2023
    Publication date: August 10, 2023
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
  • Publication number: 20230203415
    Abstract: A cell and tissue sheet forming package includes a container body, a membrane, a sliding door plate and a sealing film. The sliding door plate is disposed slidably on a top of the container body to cover or expose the membrane. The sliding door plate has a hole and a passive magnetic assembly. The cell injection equipment includes a carrier, an injection mechanism and a drive mechanism. The carrier carries the package, and the drive mechanism moves the carrier and the injection mechanism to have the injection mechanism to inject a solution, through the hole, into the package. A heating element of the carrier is introduced to heat the membrane and the solution to transform the solution into a colloid sheet on the membrane. Then, the positive magnetic assembly engages magnetically the passive magnetic assembly to slide the sliding door plate to expose the colloid sheet on the membrane.
    Type: Application
    Filed: December 23, 2021
    Publication date: June 29, 2023
    Inventors: HSIN-YI HSU, YANG-CHENG LIN, CHAO-HONG HSU, YU-BING LIOU, LI-HSIN LIN, HSIN-HSIN SHEN, YU-CHI WANG, CHANG-CHOU LI, CHIH-HUNG HUANG
  • Patent number: 11664426
    Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.
    Type: Grant
    Filed: March 3, 2022
    Date of Patent: May 30, 2023
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
  • Patent number: 11563088
    Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.
    Type: Grant
    Filed: December 10, 2019
    Date of Patent: January 24, 2023
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
  • Publication number: 20230014825
    Abstract: An optoelectronic semiconductor device includes a substrate, a first type semiconductor structure, a second type semiconductor structure, an active structure and a contact structure. The first type semiconductor structure is located on the substrate and has a first protrusion part with a first thickness and a platform part with a second thickness. The second type semiconductor structure is located on the first type semiconductor structure. The active structure is between the first type semiconductor structure and the second type semiconductor structure. The contact structure is disposed between the first type semiconductor structure and the substrate. The second thickness of the platform part is in a range of 0.01 ?m to 1 ?m.
    Type: Application
    Filed: September 19, 2022
    Publication date: January 19, 2023
    Inventors: Chung-Hao WANG, Yu-Chi WANG, Yi-Ming CHEN, Yi-Yang CHIU, Chun-Yu LIN
  • Publication number: 20220388293
    Abstract: A method for preparing a bifunctional film, including: (a) drying a first polymer solution to form a film to form an anti-adhesion layer, and (b) drying a second polymer solution over the anti-adhesion layer to form a film to form an attachment layer. The first polymer solution includes a first hydrophobic solution and a first hydrophilic solution, and in the first polymer solution, the weight ratio of the solute of the first hydrophobic solution to the solute of the first hydrophilic solution is 1:0.01-1. Moreover, the second polymer solution is composed of a second hydrophilic solution.
    Type: Application
    Filed: August 11, 2022
    Publication date: December 8, 2022
    Applicant: Industrial Technology Research Institute
    Inventors: Hsin-Hsin SHEN, Yu-Chi WANG, Ming-Chia YANG, Yu-Bing LIOU, Wei-Hong CHANG, Yun-Han LIN, Hsin-Yi HSU, Yun-Chung TENG, Chia-Jung LU, Yi-Hsuan LEE, Jian-Wei LIN, Kun-Mao KUO, Ching-Mei CHEN