Patents by Inventor Yu-Chi Wang
Yu-Chi Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12046639Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: GrantFiled: February 28, 2022Date of Patent: July 23, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Patent number: 12044574Abstract: A non-contact body temperature measurement device includes a thermal imager, an anemometer and a processing unit. The thermal imager is provided to capture thermal images. The anemometer is provided to measure wind speed and output a wind speed signal. The processing unit is provided to process the thermal images according to the wind speed signal and remove the thermal image showing great variation in temperature between two consecutive frames. Consequently, an accurate body temperature can be measured through the processed thermal images.Type: GrantFiled: July 28, 2022Date of Patent: July 23, 2024Assignee: NATIONAL SUN YAT-SEN UNIVERSITYInventors: Fu-Kang Wang, Pin-Hsun Juan, Ya-Chi Su, Yu-Chieh Wang, Ju-Yin Shih
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Patent number: 12046640Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: GrantFiled: April 17, 2023Date of Patent: July 23, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Patent number: 12040219Abstract: A device includes a substrate, a first fin, a second fin, a first isolation structure, a second isolation structure, and a gate structure. The first fin extends from a p-type region of the substrate. The second fin extends from an n-type region of the substrate. The first isolation structure is over the p-type region and adjacent to the first fin. The first isolation structure has a bottom surface and opposite first and second sidewalls connected to the bottom surface, a first round corner is between the bottom surface and the first sidewall of the first isolation structure, and the first sidewall is substantially parallel to the second sidewall. The second isolation structure is over the n-type region and adjacent to the first fin. The first isolation structure is deeper than the second isolation structure. The gate structure is over the first isolation structure and covering the first fin.Type: GrantFiled: July 9, 2021Date of Patent: July 16, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsien-Chung Huang, Chiung-Wen Hsu, Mei-Ju Kuo, Yu-Ting Weng, Yu-Chi Lin, Ting-Chung Wang, Chao-Cheng Chen
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Patent number: 11955519Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: GrantFiled: April 17, 2023Date of Patent: April 9, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Patent number: 11904581Abstract: A method for preparing a bifunctional film, including: (a) drying a first polymer solution to form a film to form an anti-adhesion layer, and (b) drying a second polymer solution over the anti-adhesion layer to form a film to form an attachment layer. The first polymer solution includes a first hydrophobic solution and a first hydrophilic solution, and in the first polymer solution, the weight ratio of the solute of the first hydrophobic solution to the solute of the first hydrophilic solution is 1:0.01-1. Moreover, the second polymer solution is composed of a second hydrophilic solution.Type: GrantFiled: August 11, 2022Date of Patent: February 20, 2024Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Hsin-Hsin Shen, Yu-Chi Wang, Ming-Chia Yang, Yu-Bing Liou, Wei-Hong Chang, Yun-Han Lin, Hsin-Yi Hsu, Yun-Chung Teng, Chia-Jung Lu, Yi-Hsuan Lee, Jian-Wei Lin, Kun-Mao Kuo, Ching-Mei Chen
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Publication number: 20230268397Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: ApplicationFiled: April 17, 2023Publication date: August 24, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Publication number: 20230253457Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: ApplicationFiled: April 17, 2023Publication date: August 10, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Publication number: 20230203415Abstract: A cell and tissue sheet forming package includes a container body, a membrane, a sliding door plate and a sealing film. The sliding door plate is disposed slidably on a top of the container body to cover or expose the membrane. The sliding door plate has a hole and a passive magnetic assembly. The cell injection equipment includes a carrier, an injection mechanism and a drive mechanism. The carrier carries the package, and the drive mechanism moves the carrier and the injection mechanism to have the injection mechanism to inject a solution, through the hole, into the package. A heating element of the carrier is introduced to heat the membrane and the solution to transform the solution into a colloid sheet on the membrane. Then, the positive magnetic assembly engages magnetically the passive magnetic assembly to slide the sliding door plate to expose the colloid sheet on the membrane.Type: ApplicationFiled: December 23, 2021Publication date: June 29, 2023Inventors: HSIN-YI HSU, YANG-CHENG LIN, CHAO-HONG HSU, YU-BING LIOU, LI-HSIN LIN, HSIN-HSIN SHEN, YU-CHI WANG, CHANG-CHOU LI, CHIH-HUNG HUANG
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Patent number: 11664426Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: GrantFiled: March 3, 2022Date of Patent: May 30, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Patent number: 11563088Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: GrantFiled: December 10, 2019Date of Patent: January 24, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Publication number: 20230014825Abstract: An optoelectronic semiconductor device includes a substrate, a first type semiconductor structure, a second type semiconductor structure, an active structure and a contact structure. The first type semiconductor structure is located on the substrate and has a first protrusion part with a first thickness and a platform part with a second thickness. The second type semiconductor structure is located on the first type semiconductor structure. The active structure is between the first type semiconductor structure and the second type semiconductor structure. The contact structure is disposed between the first type semiconductor structure and the substrate. The second thickness of the platform part is in a range of 0.01 ?m to 1 ?m.Type: ApplicationFiled: September 19, 2022Publication date: January 19, 2023Inventors: Chung-Hao WANG, Yu-Chi WANG, Yi-Ming CHEN, Yi-Yang CHIU, Chun-Yu LIN
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Publication number: 20220388293Abstract: A method for preparing a bifunctional film, including: (a) drying a first polymer solution to form a film to form an anti-adhesion layer, and (b) drying a second polymer solution over the anti-adhesion layer to form a film to form an attachment layer. The first polymer solution includes a first hydrophobic solution and a first hydrophilic solution, and in the first polymer solution, the weight ratio of the solute of the first hydrophobic solution to the solute of the first hydrophilic solution is 1:0.01-1. Moreover, the second polymer solution is composed of a second hydrophilic solution.Type: ApplicationFiled: August 11, 2022Publication date: December 8, 2022Applicant: Industrial Technology Research InstituteInventors: Hsin-Hsin SHEN, Yu-Chi WANG, Ming-Chia YANG, Yu-Bing LIOU, Wei-Hong CHANG, Yun-Han LIN, Hsin-Yi HSU, Yun-Chung TENG, Chia-Jung LU, Yi-Hsuan LEE, Jian-Wei LIN, Kun-Mao KUO, Ching-Mei CHEN
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Patent number: 11508818Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: GrantFiled: October 21, 2021Date of Patent: November 22, 2022Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Publication number: 20220320292Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: ApplicationFiled: February 28, 2022Publication date: October 6, 2022Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Patent number: 11458715Abstract: A method for preparing a bifunctional film, including: (a) drying a first polymer solution to form a film to form an anti-adhesion layer; and (b) drying a second polymer solution over the anti-adhesion layer to form a film to form an attachment layer. The first polymer solution includes a first hydrophobic solution and a first hydrophilic solution, and in the first polymer solution, the weight ratio of the solute of the first hydrophobic solution to the solute of the first hydrophilic solution is 1:0.01-1. Moreover, the second polymer solution consists of a second hydrophilic solution.Type: GrantFiled: November 6, 2019Date of Patent: October 4, 2022Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Hsin-Hsin Shen, Yu-Chi Wang, Ming-Chia Yang, Yu-Bing Liou, Wei-Hong Chang, Yun-Han Lin, Hsin-Yi Hsu, Yun-Chung Teng, Chia-Jung Lu, Yi-Hsuan Lee, Jian-Wei Lin, Kun-Mao Kuo, Ching-Mei Chen
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Publication number: 20220310794Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: ApplicationFiled: March 3, 2022Publication date: September 29, 2022Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Patent number: 11450787Abstract: An optoelectronic semiconductor device includes a semiconductor stack, an electrode, and a plurality of contact portions. The semiconductor stack includes a first type semiconductor structure, an active structure on the first type semiconductor structure, and a second type semiconductor structure on the active structure. The first type semiconductor structure includes a first protrusion part, a second protrusion part and a platform part between the first protrusion part and the second protrusion part. The semiconductor stack includes a thickness. The electrode on the second type semiconductor structure includes a region corresponding to the first protrusion. The contact portions are located at the second protrusion part without being at the first protrusion part. The contact portions are attached to the first type semiconductor structure.Type: GrantFiled: August 7, 2020Date of Patent: September 20, 2022Assignee: EPISTAR CORPORATIONInventors: Chung-Hao Wang, Yu-Chi Wang, Yi-Ming Chen, Yi-Yang Chiu, Chun-Yu Lin
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Publication number: 20220262942Abstract: An HEMT includes an aluminum gallium nitride layer. A gallium nitride layer is disposed below the aluminum gallium nitride layer. A zinc oxide layer is disposed under the gallium nitride layer. A source electrode and a drain electrode are disposed on the aluminum gallium nitride layer. A gate electrode is disposed on the aluminum gallium nitride layer and between the drain electrode and the source electrode.Type: ApplicationFiled: May 2, 2022Publication date: August 18, 2022Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Patent number: 11355626Abstract: An HEMT includes an aluminum gallium nitride layer. A gallium nitride layer is disposed below the aluminum gallium nitride layer. A zinc oxide layer is disposed under the gallium nitride layer. A source electrode and a drain electrode are disposed on the aluminum gallium nitride layer. A gate electrode is disposed on the aluminum gallium nitride layer and between the drain electrode and the source electrode.Type: GrantFiled: September 18, 2019Date of Patent: June 7, 2022Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang