Patents by Inventor Yu-Chi Wang
Yu-Chi Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12224212Abstract: A semiconductor structure has a frontside and a backside. The semiconductor structure includes an isolation structure at the backside; one or more transistors at the frontside, wherein the one or more transistors have source/drain epitaxial features; two metal plugs through the isolation structure and contacting two of the source/drain electrodes from the backside; and a dielectric liner filling a space between the two metal plugs, wherein the dielectric liner partially or fully surrounds an air gap between the two metal plugs.Type: GrantFiled: May 25, 2023Date of Patent: February 11, 2025Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Yuan Chen, Huan-Chieh Su, Cheng-Chi Chuang, Yu-Ming Lin, Chih-Hao Wang
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Patent number: 12224339Abstract: An HEMT includes an aluminum gallium nitride layer. A gallium nitride layer is disposed below the aluminum gallium nitride layer. A zinc oxide layer is disposed under the gallium nitride layer. A source electrode and a drain electrode are disposed on the aluminum gallium nitride layer. A gate electrode is disposed on the aluminum gallium nitride layer and between the drain electrode and the source electrode.Type: GrantFiled: May 2, 2022Date of Patent: February 11, 2025Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Publication number: 20250046623Abstract: The application relates to a method for manufacturing an electronic device, and in particular, to a method for manufacturing an electronic device with a carrier substrate. The method includes: providing a carrier substrate; forming a first base layer on the carrier substrate; forming a working unit on the first base layer, performing a detection step on the working unit to identify whether a defect is present, wherein the detection step includes automated optical inspection (AOI), electrical detection, or a combination thereof; and repairing the electronic device.Type: ApplicationFiled: October 18, 2024Publication date: February 6, 2025Inventors: Yeong-E CHEN, Cheng-En CHENG, Yu-Ting LIU, Cheng-Chi WANG
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Publication number: 20250047948Abstract: Interaction is created between users and streamers even when the users give gifts to the streamers outside live-streams. Provided is a terminal of a user, which includes: one or more processors; and memory storing one or more computer programs configured to be executed by the one or more processors. The one or more computer programs include instructions for: receiving, from the user, an instruction to use a gift for a streamer while the user is not participating in a live-stream of the streamer; and causing an output unit to output an effect corresponding to the use of the gift by the user while the streamer is live-streaming.Type: ApplicationFiled: October 21, 2024Publication date: February 6, 2025Inventors: Yu-Shan YANG, Yung-Chi HSU, Sheng-Kai HSU, Ching-Jan WANG, Yun-An LIN
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Publication number: 20250041227Abstract: Provided herein are heterocyclic derivative compounds and tablet pharmaceutical compositions comprising said compounds that are useful for the treatment of retinal binding protein (RBP4) related diseases, such as macular degeneration and the like.Type: ApplicationFiled: November 22, 2022Publication date: February 6, 2025Inventors: Irene Cheng-Chi WANG, Tom Yu-Hsin WANG
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Publication number: 20240421253Abstract: An optoelectronic semiconductor device includes a substrate, a first type semiconductor structure located on the substrate, a second type semiconductor structure located on the first type semiconductor structure, an active structure located between the first type semiconductor structure and the second type semiconductor structure, a plurality of contact portions disposed between the first type semiconductor structure and the substrate, and a first conductive oxide layer, a second conductive oxide layer, a first insulating layer and a second insulating layer. The plurality of contact portions is separated from each other, and one of them includes a semiconductor and has a side wall. The first conductive oxide layer contacts the contact portion, and the second conductive oxide layer contacts the first conductive oxide layer. The first insulating layer contacts the side wall. The second insulating layer is disposed between the first insulating layer and the second conductive oxide layer.Type: ApplicationFiled: August 26, 2024Publication date: December 19, 2024Inventors: Chung-Hao WANG, Yu-Chi WANG, Yi-Ming CHEN, Yi-Yang CHIU, Chun-Yu LIN
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Publication number: 20240405054Abstract: A monolithic array chip comprises a first semiconductor layer; a common electrode located on the first semiconductor layer; a first light-emitting unit with a first electrode located on the first semiconductor layer; a second light-emitting unit with a second electrode located on the first semiconductor layer; a third light-emitting unit with a third electrode located on the first semiconductor layer, wherein the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit are separated from each other by a trench.Type: ApplicationFiled: May 30, 2024Publication date: December 5, 2024Inventors: Min-Hsun HSIEH, Chih-Ming WANG, Jan-Way CHIEN, Hui-Ching FENG, Yu-Chi WANG, Hsia-Ching CHENG
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Patent number: 12144595Abstract: The present invention provides a wearable device for monitoring blood-pressure.Type: GrantFiled: August 10, 2020Date of Patent: November 19, 2024Assignee: Cardio Ring Technologies, Inc.Inventors: Kuang-Fu Chang, Yu-Chi Wang, Leng-Chun Chen, Jun-Ming Chen, Wen-Pin Shih
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Patent number: 12074252Abstract: An optoelectronic semiconductor device includes a substrate, a first type semiconductor structure, a second type semiconductor structure, an active structure and a contact structure. The first type semiconductor structure is located on the substrate and has a first protrusion part with a first thickness and a platform part with a second thickness. The second type semiconductor structure is located on the first type semiconductor structure. The active structure is between the first type semiconductor structure and the second type semiconductor structure. The contact structure is disposed between the first type semiconductor structure and the substrate. The second thickness of the platform part is in a range of 0.01 ?m to 1 ?m.Type: GrantFiled: September 19, 2022Date of Patent: August 27, 2024Assignee: EPISTAR CORPORATIONInventors: Chung-Hao Wang, Yu-Chi Wang, Yi-Ming Chen, Yi-Yang Chiu, Chun-Yu Lin
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Patent number: 12046639Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: GrantFiled: February 28, 2022Date of Patent: July 23, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Patent number: 12046640Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: GrantFiled: April 17, 2023Date of Patent: July 23, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Patent number: 11955519Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: GrantFiled: April 17, 2023Date of Patent: April 9, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Patent number: 11904581Abstract: A method for preparing a bifunctional film, including: (a) drying a first polymer solution to form a film to form an anti-adhesion layer, and (b) drying a second polymer solution over the anti-adhesion layer to form a film to form an attachment layer. The first polymer solution includes a first hydrophobic solution and a first hydrophilic solution, and in the first polymer solution, the weight ratio of the solute of the first hydrophobic solution to the solute of the first hydrophilic solution is 1:0.01-1. Moreover, the second polymer solution is composed of a second hydrophilic solution.Type: GrantFiled: August 11, 2022Date of Patent: February 20, 2024Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Hsin-Hsin Shen, Yu-Chi Wang, Ming-Chia Yang, Yu-Bing Liou, Wei-Hong Chang, Yun-Han Lin, Hsin-Yi Hsu, Yun-Chung Teng, Chia-Jung Lu, Yi-Hsuan Lee, Jian-Wei Lin, Kun-Mao Kuo, Ching-Mei Chen
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Publication number: 20230268397Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: ApplicationFiled: April 17, 2023Publication date: August 24, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Publication number: 20230253457Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: ApplicationFiled: April 17, 2023Publication date: August 10, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Publication number: 20230203415Abstract: A cell and tissue sheet forming package includes a container body, a membrane, a sliding door plate and a sealing film. The sliding door plate is disposed slidably on a top of the container body to cover or expose the membrane. The sliding door plate has a hole and a passive magnetic assembly. The cell injection equipment includes a carrier, an injection mechanism and a drive mechanism. The carrier carries the package, and the drive mechanism moves the carrier and the injection mechanism to have the injection mechanism to inject a solution, through the hole, into the package. A heating element of the carrier is introduced to heat the membrane and the solution to transform the solution into a colloid sheet on the membrane. Then, the positive magnetic assembly engages magnetically the passive magnetic assembly to slide the sliding door plate to expose the colloid sheet on the membrane.Type: ApplicationFiled: December 23, 2021Publication date: June 29, 2023Inventors: HSIN-YI HSU, YANG-CHENG LIN, CHAO-HONG HSU, YU-BING LIOU, LI-HSIN LIN, HSIN-HSIN SHEN, YU-CHI WANG, CHANG-CHOU LI, CHIH-HUNG HUANG
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Patent number: 11664426Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: GrantFiled: March 3, 2022Date of Patent: May 30, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Patent number: 11563088Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.Type: GrantFiled: December 10, 2019Date of Patent: January 24, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Publication number: 20230014825Abstract: An optoelectronic semiconductor device includes a substrate, a first type semiconductor structure, a second type semiconductor structure, an active structure and a contact structure. The first type semiconductor structure is located on the substrate and has a first protrusion part with a first thickness and a platform part with a second thickness. The second type semiconductor structure is located on the first type semiconductor structure. The active structure is between the first type semiconductor structure and the second type semiconductor structure. The contact structure is disposed between the first type semiconductor structure and the substrate. The second thickness of the platform part is in a range of 0.01 ?m to 1 ?m.Type: ApplicationFiled: September 19, 2022Publication date: January 19, 2023Inventors: Chung-Hao WANG, Yu-Chi WANG, Yi-Ming CHEN, Yi-Yang CHIU, Chun-Yu LIN
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Publication number: 20220388293Abstract: A method for preparing a bifunctional film, including: (a) drying a first polymer solution to form a film to form an anti-adhesion layer, and (b) drying a second polymer solution over the anti-adhesion layer to form a film to form an attachment layer. The first polymer solution includes a first hydrophobic solution and a first hydrophilic solution, and in the first polymer solution, the weight ratio of the solute of the first hydrophobic solution to the solute of the first hydrophilic solution is 1:0.01-1. Moreover, the second polymer solution is composed of a second hydrophilic solution.Type: ApplicationFiled: August 11, 2022Publication date: December 8, 2022Applicant: Industrial Technology Research InstituteInventors: Hsin-Hsin SHEN, Yu-Chi WANG, Ming-Chia YANG, Yu-Bing LIOU, Wei-Hong CHANG, Yun-Han LIN, Hsin-Yi HSU, Yun-Chung TENG, Chia-Jung LU, Yi-Hsuan LEE, Jian-Wei LIN, Kun-Mao KUO, Ching-Mei CHEN