Abstract: In a method of manufacturing a semiconductor device, a fin structure, in which first semiconductor layers and second semiconductor layers are alternately stacked, is formed. A sacrificial gate structure is formed over the fin structure. The first semiconductor layers, the second semiconductor layer and an upper portion of the fin structure at a source/drain region of the fin structure, which is not covered by the sacrificial gate structure, are etched. A dielectric layer is formed over the etched upper portion of the fin structure. A source/drain epitaxial layer is formed. The source/drain epitaxial layer is connected to ends of the second semiconductor wires, and a bottom of the source/drain epitaxial layer is separated from the fin structure by the dielectric layer.

Abstract: The present disclosure provides an electronic device including a redistribution layer, a plurality of passive components, and an electronic component. The redistribution layer includes a first insulating layer, a second insulating layer, and a plurality of traces electrically connected to each other through a first opening of the first insulating layer and a second opening of the second insulating layer, wherein the first insulating layer has a first side away from the second insulating layer, and the second insulating layer has a second side away from the first insulating layer. The passive components are disposed on the first side. The electronic component is disposed on the second side. The plurality of passive components are electrically connected to the electronic component through the plurality of traces.

Abstract: This invention discloses a manufacturing method and a device for an air blown chip heat dissipation. This heat dissipation device includes an air stream produce device, a plurality of heat sink fins, a heat dissipation slip and a heat pipe. The heat dissipation slip is often used in conducting the heat from a chip. The heat dissipation slip can be made of a special thermal conduction material, including the metal and a bracket structure of carbon element which have high thermal conductivity so as to improve the heat conduction efficiency. The corresponding manufacturing method for this thermal conduction material can be made with chemical vapor deposition, physical vapor deposition, electroplating or the other materials preparation method. The bracket structure of carbon element can coat on the metal surface and also can be mixed into the metal.