Abstract: A fin-based transistor and method for making same. In some embodiments, the transistor includes a first fin and a second fin formed on a substrate, the first and second fins being laterally spaced from each other, wherein an upper portion of the first fin is doped with a first type of dopant and an upper portion of the second fin is doped with a second type of dopant different from the first type of dopant; a protection layer formed over the first and second fins, wherein the protection layer comprises a dielectric material selected from a group comprising: silicon nitride, silicon oxynitride, and a combination thereof; and source and drain features formed in respective side portions of the first and second fins.

Abstract: A fin-based transistor and method for making same. In some embodiments, the transistor includes a first fin and a second fin formed on a substrate, the first and second fins being laterally spaced from each other, wherein an upper portion of the first fin is doped with a first type of dopant and an upper portion of the second fin is doped with a second type of dopant different from the first type of dopant; a protection layer formed over the first and second fins, wherein the protection layer comprises a dielectric material selected from a group comprising: silicon nitride, silicon oxynitride, and a combination thereof; and source and drain features formed in respective side portions of the first and second fins.

Abstract: A method for forming a fin-based transistor includes forming a fin on a substrate; overlaying at least an upper portion of the fin by an oxide layer and a protection layer, wherein the protection layer is formed above the oxide layer; and doping at least the upper portion of the fin by using an ion implantation process, wherein the protection layer protects against damage to at least the upper portion of the fin and the oxide layer during the ion implantation process.

Abstract: A method for forming a fin-based transistor includes forming a fin on a substrate; overlaying at least an upper portion of the fin by an oxide layer and a protection layer, wherein the protection layer is formed above the oxide layer; and doping at least the upper portion of the fin by using an ion implantation process, wherein the protection layer protects against damage to at least the upper portion of the fin and the oxide layer during the ion implantation process.