Patents by Inventor Yu-Chieh Liao
Yu-Chieh Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145380Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first interconnect dielectric layer arranged over a substrate. An interconnect wire extends through the first interconnect dielectric layer, and a barrier structure is arranged directly over the interconnect wire. The integrated chip further includes an etch stop layer arranged over the barrier structure and surrounds outer sidewalls of the barrier structure. A second interconnect dielectric layer is arranged over the etch stop layer, and an interconnect via extends through the second interconnect dielectric layer, the etch stop layer, and the barrier structure to contact the interconnect wire.Type: ApplicationFiled: January 5, 2024Publication date: May 2, 2024Inventors: Hsin-Chieh Yao, Chung-Ju Lee, Chih Wei Lu, Hsi-Wen Tien, Wei-Hao Liao, Yu-Teng Dai
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Publication number: 20240141922Abstract: A heat dissipation system of an electronic device including a body, a plurality of heat sources disposed in the body, and at least one centrifugal heat dissipation fan disposed in the body is provided. The centrifugal heat dissipation fan includes a housing and an impeller disposed in the housing on an axis. The housing has at least one inlet on the axis and has a plurality of outlets in different radial directions, and the plurality of outlets respectively correspond to the plurality of heat sources.Type: ApplicationFiled: January 9, 2024Publication date: May 2, 2024Applicant: Acer IncorporatedInventors: Tsung-Ting Chen, Wen-Neng Liao, Cheng-Wen Hsieh, Yu-Ming Lin, Wei-Chin Chen, Chun-Chieh Wang, Shu-Hao Kuo
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Patent number: 11972975Abstract: A method of forming a semiconductor device structure is provided. The method includes forming a masking structure with first openings over a semiconductor substrate and correspondingly forming metal layers in the first openings. The method also includes recessing the masking structure to form second openings between the metal layers and forming a sacrificial layer surrounded by a first liner in each of the second openings. In addition, after forming a second liner over the sacrificial layer in each of the second openings, the method includes removing the sacrificial layer in each of the second openings to form a plurality of air gaps therefrom.Type: GrantFiled: June 24, 2021Date of Patent: April 30, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsi-Wen Tien, Wei-Hao Liao, Yu-Teng Dai, Hsin-Chieh Yao, Chih-Wei Lu, Chung-Ju Lee, Shau-Lin Shue
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Patent number: 11953400Abstract: A pressure sensing unit is provided. The pressure sensing unit includes a membrane and a pressure sensing pad group. The membrane has a first surface and a second surface. The pressure sensing pad group includes a first pressure sensing pad, a second pressure sensing pad, and a ground pad that are spaced apart from one another. The ground pad and one among the first pressure sensing pad and the second pressure sensing pad are located at the first surface of the membrane, another one among the first pressure sensing pad and the second pressure sensing pad is located at the second surface of the membrane, and an orthographic projection of the ground pad projected onto a reference plane is located between orthographic projections of the first pressure sensing pad and the second pressure sensing pad that are projected onto the reference plane. Therefore, a signal-to-noise ratio can be increased and an erroneous detection can be prevented.Type: GrantFiled: May 2, 2023Date of Patent: April 9, 2024Assignee: PIXART IMAGING INC.Inventors: Che-Chia Hsu, Yu-Han Chen, Chi-Chieh Liao
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Publication number: 20240113071Abstract: An integrated circuit package including electrically floating metal lines and a method of forming are provided. The integrated circuit package may include integrated circuit dies, an encapsulant around the integrated circuit dies, a redistribution structure on the encapsulant, a first electrically floating metal line disposed on the redistribution structure, a first electrical component connected to the redistribution structure, and an underfill between the first electrical component and the redistribution structure. A first opening in the underfill may expose a top surface of the first electrically floating metal line.Type: ApplicationFiled: January 5, 2023Publication date: April 4, 2024Inventors: Chung-Shi Liu, Mao-Yen Chang, Yu-Chia Lai, Kuo-Lung Pan, Hao-Yi Tsai, Ching-Hua Hsieh, Hsiu-Jen Lin, Po-Yuan Teng, Cheng-Chieh Wu, Jen-Chun Liao
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Patent number: 11950491Abstract: A semiconductor mixed material comprises an electron donor, a first electron acceptor and a second electron acceptor. The first electron donor is a conjugated polymer. The energy gap of the first electron acceptor is less than 1.4 eV. At least one of the molecular stackability, ?-?*stackability, and crystallinity of the second electron acceptor is smaller than the first electron acceptor. The electron donor system is configured to be a matrix to blend the first electron acceptor and the second electron acceptor. The present invention also provides an organic electronic device including the semiconductor mixed material.Type: GrantFiled: November 17, 2020Date of Patent: April 2, 2024Assignee: RAYNERGY TEK INCORPORATIONInventors: Yi-Ming Chang, Chuang-Yi Liao, Wei-Long Li, Yu-Tang Hsiao, Chun-Chieh Lee, Chia-Hua Li, Huei-Shuan Tan
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Patent number: 11946483Abstract: A fan is provided herein, including a housing, a hub, and a plurality of blades. The housing includes a top case and a bottom case. The hub is rotatably disposed between the top case and the bottom case in an axial direction. The blades extend from the hub in a radial direction, located between the top case and the bottom case. Each of the blades has a proximal end and a distal end. The proximal end is connected to the hub. The distal end is opposite from the proximal end, located at the other side of the blade, having at least one recessed portion. Each of the recessed portions form a passage for air.Type: GrantFiled: May 17, 2023Date of Patent: April 2, 2024Assignee: ACER INCORPORATEDInventors: Jau-Han Ke, Tsung-Ting Chen, Chun-Chieh Wang, Yu-Ming Lin, Cheng-Wen Hsieh, Wen-Neng Liao
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Patent number: 11942364Abstract: In some embodiments, the present disclosure relates to a method of forming an interconnect. The method includes forming an etch stop layer (ESL) over a lower conductive structure and forming one or more dielectric layers over the ESL. A first patterning process is performed on the one or more dielectric layers to form interconnect opening and a second patterning process is performed on the one or more dielectric layers to increase a depth of the interconnect opening and expose an upper surface of the ESL. A protective layer is selectively formed on sidewalls of the one or more dielectric layers forming the interconnect opening. A third patterning process is performed to remove portions of the ESL that are uncovered by the one or more dielectric layers and the protective layer and to expose the lower conductive structure. A conductive material is formed within the interconnect opening.Type: GrantFiled: July 20, 2022Date of Patent: March 26, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsi-Wen Tien, Chung-Ju Lee, Chih Wei Lu, Hsin-Chieh Yao, Yu-Teng Dai, Wei-Hao Liao
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Publication number: 20240088022Abstract: Some embodiments relate to an integrated chip including a plurality of conductive structures over a substrate. A first dielectric layer is disposed laterally between the conductive structures. A spacer structure is disposed between the first dielectric layer and the plurality of conductive structures. An etch stop layer overlies the plurality of conductive structures. The etch stop layer is disposed on upper surfaces of the spacer structure and the first dielectric layer.Type: ApplicationFiled: November 17, 2023Publication date: March 14, 2024Inventors: Yu-Teng Dai, Chung-Ju Lee, Chih Wei Lu, Hsin-Chieh Yao, Hsi-Wen Tien, Wei-Hao Liao
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Patent number: 11923293Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first interconnect dielectric layer arranged over a substrate. An interconnect wire extends through the first interconnect dielectric layer, and a barrier structure is arranged directly over the interconnect wire. The integrated chip further includes an etch stop layer arranged over the barrier structure and surrounds outer sidewalls of the barrier structure. A second interconnect dielectric layer is arranged over the etch stop layer, and an interconnect via extends through the second interconnect dielectric layer, the etch stop layer, and the barrier structure to contact the interconnect wire.Type: GrantFiled: July 8, 2021Date of Patent: March 5, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsin-Chieh Yao, Chung-Ju Lee, Chih Wei Lu, Hsi-Wen Tien, Wei-Hao Liao, Yu-Teng Dai
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Patent number: 11913472Abstract: A centrifugal heat dissipation fan including a housing and an impeller disposed in the housing on an axis is provided. The housing has at least one inlet on the axis and has a plurality of outlets in different radial directions. A heat dissipation system of an electronic device is also provided.Type: GrantFiled: April 6, 2021Date of Patent: February 27, 2024Assignee: Acer IncorporatedInventors: Tsung-Ting Chen, Wen-Neng Liao, Cheng-Wen Hsieh, Yu-Ming Lin, Wei-Chin Chen, Chun-Chieh Wang, Shu-Hao Kuo
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Publication number: 20230282312Abstract: A construction method of ribosomal RNA database is provided, including the following steps: selecting a source of nucleic acid sequence database; performing normalization and homogenization on species classification rules; using AI technology for normalized classification and correction; selecting the kingdom to which the sequence species belongs; filtering out redundant sequences and sequences with inconsistent lengths; setting a threshold for unknown bases other than A, T, C or G, and excluding unknown bases that exceed the threshold; and excluding sequences with insufficient classification information.Type: ApplicationFiled: May 20, 2022Publication date: September 7, 2023Applicants: Acer Incorporated, Acer Medical Inc., Chang Gung Memorial Hospital, Keelung, National Health Research InstitutesInventors: Yun-Hsuan Chan, I-Wen Wu, Chieh Hua Lin, Yin-Hsong Hsu, Chi-Hsiao Yeh, Yu-Chieh Liao, Tsung-Hsien Tsai
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Publication number: 20230275018Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a first interconnect layer over a substrate, the first interconnect layer including a first conductive feature and a second conductive feature, forming a patterned mask on the first interconnect layer, one or more openings in the patterned mask overlaying the second conductive feature, recessing the second conductive feature through the one or more openings in the patterned mask, and forming a second interconnect layer over the first interconnect layer. The second interconnect layer includes a first via in contact with the first conductive feature and a second via in contact with the second conductive feature.Type: ApplicationFiled: June 4, 2022Publication date: August 31, 2023Inventors: Chia-Tien Wu, Wei-Chen Chu, Yu-Chieh Liao, Hsin-Ping Chen
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Patent number: 11640924Abstract: The present disclosure provides a method of forming an integrated circuit structure. The method includes depositing a first metal layer on a semiconductor substrate; forming a hard mask on the first metal layer; patterning the first metal layer to form first metal features using the hard mask as an etch mask; depositing a dielectric layer of a first dielectric material on the first metal features and in gaps among the first metal features; performing a chemical mechanical polishing (CMP) process to both the dielectric layer and the hard mask; removing the hard mask, thereby having portions of the dielectric layer extruded above the metal features; forming an inter-layer dielectric (ILD) layer of the second dielectric material different from the first dielectric material; and patterning the ILD layer to form openings that expose the first metal features and are constrained to be self-aligned with the first metal features by the extruded portions of the first dielectric layer.Type: GrantFiled: May 7, 2021Date of Patent: May 2, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tai-I Yang, Yu-Chieh Liao, Chia-Tien Wu, Hsin-Ping Chen, Hai-Ching Chen, Shau-Lin Shue
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Publication number: 20230067527Abstract: A semiconductor structure includes a substrate, a dielectric layer, a first conductive feature and a second conductive feature. The substrate includes a semiconductor device. The dielectric layer is disposed on the substrate. The first conductive feature is formed in the first dielectric layer. The second conductive feature penetrates the first conductive feature and the dielectric layer, and is electrically connected to the first conductive feature and the semiconductor device.Type: ApplicationFiled: August 30, 2021Publication date: March 2, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wei-Chen CHU, Chia-Tien WU, Chia-Wei SU, Yu-Chieh LIAO, Chia-Chen LEE, Hsin-Ping CHEN, Shau-Lin SHUE
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Publication number: 20220238676Abstract: A device includes a nanostructure, a gate dielectric layer, a gate electrode, and a gate contact. The nanostructure is over a substrate. The gate dielectric layer laterally surrounds the nanostructure. The gate electrode laterally surrounds the gate dielectric layer. The gate electrode has a bottom surface and a top surface both higher than a bottom end of the nanostructure. The gate electrode has a horizontal dimension decreasing from the bottom surface to the top surface. The gate contact is electrically coupled to the gate electrode.Type: ApplicationFiled: April 11, 2022Publication date: July 28, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yung-Chih WANG, Yu-Chieh LIAO, Tai-I YANG, Hsin-Ping CHEN
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Patent number: 11302792Abstract: A device includes a nanowire, a gate dielectric layer, a gate electrode, a gate pickup metal layer, and a gate contact. The nanowire extends in a direction perpendicular to a top surface of a substrate. The gate dielectric layer laterally surrounds the nanowire. The gate electrode laterally surrounds the gate dielectric layer. The gate pickup metal layer is in contact with a bottom surface of the gate electrode and extends laterally past opposite sidewalls of the gate electrode. The gate contact is in contact with the gate pickup metal layer.Type: GrantFiled: August 29, 2020Date of Patent: April 12, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yung-Chih Wang, Yu-Chieh Liao, Tai-I Yang, Hsin-Ping Chen
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Patent number: 11257673Abstract: A method for patterning a metal layer includes depositing a hard mask layer on a metal layer, depositing a first patterned layer on the hard mask layer, forming a first set of sidewall spacers on sidewalls of features of the first patterned layer, forming a second set of sidewall spacers on sidewalls of the first set of sidewall spacers, removing the first set of sidewall spacers, and performing a reactive ion etching process to pattern portions of the metal layer exposed through the first patterned layer and the second set of sidewall spacers.Type: GrantFiled: August 19, 2019Date of Patent: February 22, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yu-Chieh Liao, Cheng-Chi Chuang, Chia-Tien Wu, Tai-I Yang, Hsin-Ping Chen
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Publication number: 20210375760Abstract: A method comprises forming a first conductive line and a second conductive line in a first dielectric layer over a substrate, each having a planar top surface, applying an etch-back process to the first dielectric layer until a dielectric portion between the first conductive line and the second conductive line has been removed, and the first conductive line and the second conductive line have respective cross sectional shapes including a rounded surface and two rounded corners and depositing a second dielectric layer over the substrate, while leaving a first air gap between the first conductive line and the second conductive line.Type: ApplicationFiled: August 16, 2021Publication date: December 2, 2021Inventors: Hsiang-Lun Kao, Hsiang-Wei Liu, Tai-I Yang, Jian-Hua Chen, Yu-Chieh Liao, Yung-Chih Wang, Tien-Lu Lin
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Patent number: D1018441Type: GrantFiled: September 23, 2020Date of Patent: March 19, 2024Assignee: Cheng Shin Rubber Industrial Co., Ltd.Inventors: Yu Chieh Chen, Yu Shiuan Lin, Chia Hao Chang, Ku Wei Liao, Yi Ru Chen