Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate, a first conductive line, a first conductive via, a second conductive line, and a first barrier layer. The first conductive line is disposed on the substrate. The first conductive via is disposed on the first conductive line. The second conductive line is disposed on the first conductive line. The first barrier layer is disposed between the first conductive via and the second conductive line.

Abstract: A method for fabricating an integrated circuit device is provided. The method includes depositing a first dielectric layer; depositing a second dielectric layer over the first dielectric layer; etching a trench opening in the second dielectric layer, wherein the trench opening exposes a first sidewall of the second dielectric layer and a second sidewall of the second dielectric layer, the first sidewall of the second dielectric layer extends substantially along a first direction, and the second sidewall of the second dielectric layer extends substantially along a second direction different from the first direction in a top view; forming a via etch stop layer on the first sidewall of the second dielectric layer, wherein the second sidewall of the second dielectric layer is free from coverage by the via etch stop layer; forming a conductive line in the trench opening; and forming a conductive via over the conductive line.

Abstract: The present disclosure relates to an integrated chip. The integrated chip comprises a dielectric layer over a substrate. A first metal feature is over the dielectric layer. A second metal feature is over the dielectric layer and is laterally adjacent to the first metal feature. A first dielectric liner segment extends laterally between the first metal feature and the second metal feature along an upper surface of the dielectric layer. The first dielectric liner segment extends continuously from along the upper surface of the dielectric layer, to along a sidewall of the first metal feature that faces the second metal feature, and to along a sidewall of the second metal feature that faces the first metal feature. A first cavity is laterally between sidewalls of the first dielectric liner segment and is above an upper surface of the first dielectric liner segment.

Abstract: A method includes: forming a bottom electrode over a substrate; depositing a first seed layer over the bottom electrode, the first seed layer having an amorphous crystal phase; performing a first surface treatment on the first seed layer, wherein after the first surface treatment the first seed layer includes at least one of a tetragonal crystal phase and an orthorhombic crystal phase; depositing a dielectric layer over the bottom electrode adjacent to the first seed layer; depositing an upper layer over the dielectric layer; and performing a thermal operation on the dielectric layer to thereby convert the dielectric layer into a ferroelectric layer.

Abstract: In one embodiment, a method of forming metal interconnects uses a direct metal etch approach to form and fill the metal gap. The method may include directly etching a metal layer to form metal patterns. The metal patterns may be spaced apart from one another by recesses. A dielectric spacer may be formed extending along the sidewalls of each of the recesses. The recesses may be filled with a conductive material to form a second set of metal patterns. By directly etching the metal film, the technique allows for reduced line width roughness. The disclosed structure may have the advantages of increased reliability, better RC performance and reduced parasitic capacitance.

Abstract: Impurities in a liquefied solid fuel utilized in a droplet generator of an extreme ultraviolet photolithography system are removed from vessels containing the liquefied solid fuel. Removal of the impurities increases the stability and predictability of droplet formation which positively impacts wafer yield and droplet generator lifetime.

Abstract: A semiconductor structure includes a substrate, an isolation structure disposed in the substrate, and a hybrid structure disposed over the isolation structure. The hybrid structure is substantially conformal with respect to a profile of the isolation structure. The hybrid structure includes an oxide component, a nitride component surrounding the oxide component, and a first polysilicon component alongside the nitride component. The nitride component includes a first upper surface closed to the first polysilicon component, and a second upper surface distal to the first polysilicon component. The second upper surface is lower than the first upper surface.

Abstract: A device includes a multi-layer stack, a channel layer, a ferroelectric layer and buffer layers. The multi-layer stack is disposed on a substrate and includes a plurality of conductive layers and a plurality of dielectric layers stacked alternately. The channel layer penetrates through the plurality of conductive layers and the plurality of dielectric layers. The ferroelectric layer is disposed between the channel layer and each of the plurality of conductive layers and the plurality of dielectric layers. The buffer layers include a metal oxide, and one of the buffer layers is disposed between the ferroelectric layer and each of the plurality of dielectric layers.

Abstract: A novel quantum dot capable of near infrared emissions at wavelengths of 750-1100 is made by forming solid solutions of metal sulfide, metal selenide or metal sulfide selenide by incorporating a suitable amount of an additional metallic element or elements to provide an emission wavelength in the range of 750 nm to 1100 nm. The quantum dots may be enabled for bioconjugation and may be used in a method for tissue imaging and analyte detection.

Abstract: The present invention relates to a continuous reactor a method for manufacturing nanoparticles. The reactor of the present invention includes: a plurality of first inputs for individually inputting a plurality of reagents; a first mixing part connected to the first inputs to mix the reagents; N number of first reaction units, each comprising a plurality of first diverging channels and a first converging channel to form a channel having the first diverging channels and the first converging channels alternately connected to one another in series for N times of diverging-converging actions, wherein N?1, and the first diverging channels of a 1st one of the first reaction units are connected to the first mixing part; and a first output connected to the first converging channel of an Nth one of the first reaction units, so as to output a product of nanoparticles.

Abstract: A novel quantum dot capable of near infrared emissions at wavelengths of 750-1100 is made by forming solid solutions of metal sulfide, metal selenide or metal sulfide selenide by incorporating a suitable amount of an additional metallic element or elements to provide an emission wavelength in the range of 750 nm to 1100 nm. The quantum dots may be enabled for bioconjugation and may be used in a method for tissue imaging and analyte detection.

Abstract: A novel quantum dot capable of near infrared emissions at wavelengths of 750-1100 is made by forming solid solutions of metal sulfide, metal selenide or metal sulfide selenide by incorporating a suitable amount of an additional metallic element or elements to provide an emission wavelength in the range of 750 nm to 1100 nm. The quantum dots may be enabled for bioconjugation and may be used in a method for tissue imaging and analyte detection.

Abstract: The present invention relates to a continuous reactor a method for manufacturing nanoparticles. The reactor of the present invention includes: a plurality of first inputs for individually inputting a plurality of reagents; a first mixing part connected to the first inputs to mix the reagents; N number of first reaction units, each comprising a plurality of first diverging channels and a first converging channel to form a channel having the first diverging channels and the first converging channels alternately connected to one another in series for N times of diverging-converging actions, wherein N?1, and the first diverging channels of a 1st one of the first reaction units are connected to the first mixing part; and a first output connected to the first converging channel of an Nth one of the first reaction units, so as to output a product of nanoparticles.

Abstract: A novel quantum dot capable of near infrared emissions at wavelengths of 750-1100 is made by forming solid solutions of metal sulfide, metal selenide or metal sulfide selenide by incorporating a suitable amount of an additional metallic element or elements to provide an emission wavelength in the range of 750 nm to 1100 nm. The quantum dots may be enabled for bioconjugation and may be used in a method for tissue imaging and analyte detection.

Abstract: The present invention relates to a high-concentration nanoscale silver colloidal solution and the preparing process thereof. The colloidal solution of the present invention comprises a high content of silver particles, i.e. approximately 1.5 wt %. The mean size of the nanoscale silver is less than 10 nm. In the preparing process, silver salt, ionic chelating agent, stabilizing agent, reducing agent, solvent and reaction accelerator are homogeneously mixed together. The increase of reaction temperature by external heat source accelerates completed reaction. By using the specified reaction accelerator and chelating agent and under the operating condition of the present invention, high-density silver colloidal solution is obtained while inhibiting particle aggregation. Therefore, the resulting nanoscale silver colloidal solution contains very small-sized particles and the stability thereof is satisfactory.