Abstract: A resonant half-bridge flyback power converter includes: a first transistor and a second transistor which form a half-bridge circuit; a transformer and a resonant capacitor connected in series and coupled to the half-bridge circuit; and a switching control circuit configured to generate a first driving signal and a second driving signal to control the first transistor and the second transistor respectively for switching the transformer to generate an output voltage. The first driving signal is configured to magnetize the transformer. The second driving signal includes at most one pulse between two consecutive pulses of the first driving signal. The switching control circuit generates a skipping cycle period when an output power is lower than a predetermined threshold. A resonant pulse of the second driving signal is skipped during the skipping cycle period. The skipping cycle period is increased in response to the decrease of the output power.

Abstract: A method for manufacturing a MOS transistor includes following. A gate stack structure and a hardmask layer on the gate stack structure are sequentially formed on a substrate. A first spacer is formed on sidewalls of the gate stack structure and the hardmask layer. A photoresist layer is formed on a sidewall of the first spacer. A top surface of the photoresist layer is higher than a top surface of the gate stack structure. The hardmask layer and a portion of the first spacer are removed to expose the top surface of the gate stack structure. A top surface of a remaining first spacer is higher than the top surface of the gate stack structure. The photoresist layer is removed. A second spacer is formed on a sidewall of the remaining first spacer. A top surface of the second spacer is higher than the top surface of the gate stack.

Abstract: A method for manufacturing a MOS transistor includes following. A gate stack structure and a hardmask layer on the gate stack structure are sequentially formed on a substrate. A first spacer is formed on sidewalls of the gate stack structure and the hardmask layer. A photoresist layer is formed on a sidewall of the first spacer. A top surface of the photoresist layer is higher than a top surface of the gate stack structure. The hardmask layer and a portion of the first spacer are removed to expose the top surface of the gate stack structure. A top surface of a remaining first spacer is higher than the top surface of the gate stack structure. The photoresist layer is removed. A second spacer is formed on a sidewall of the remaining first spacer. A top surface of the second spacer is higher than the top surface of the gate stack.

Abstract: A fingerprint enrollment method and a fingerprint enrollment apparatus are provided. A minutiae feature and a pore feature of a first fingerprint image are extracted to obtain a first template. A minutiae feature and a pore feature of a second fingerprint image are extracted to obtain a second template. A minutiae matching score between the minutiae features of the first template and the minutiae features of the second template is calculated. When the minutiae matching score is between the first threshold and a second threshold, stitching, mosaicking or synthesis of the first template and the second template are performed by utilizing a matching relation between the pore features of the first template and the pore features of the second template and utilizing the matching relation between the minutiae feature of the first template and the minutiae feature of the second template.

Abstract: A fingerprint enrollment method and a fingerprint enrollment apparatus are provided. A minutiae feature and a pore feature of a first fingerprint image are extracted to obtain a first template. A minutiae feature and a pore feature of a second fingerprint image are extracted to obtain a second template. A minutiae matching score between the minutiae features of the first template and the minutiae features of the second template is calculated. When the minutiae matching score is between the first threshold and a second threshold, stitching, mosaicking or synthesis of the first template and the second template are performed by utilizing a matching relation between the pore features of the first template and the pore features of the second template and utilizing the matching relation between the minutiae feature of the first template and the minutiae feature of the second template.