Patents by Inventor Yu-Chien Sung

Yu-Chien Sung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method for fabricating the same
    Patent number: 10644131
    Abstract: A method for fabricating a semiconductor device is disclosed. A fin is formed on a substrate. The fin protrudes from a trench isolation layer on a substrate. The fin comprises a source region, a drain region and a channel region therebetween. A dummy gate strides across the fin and surrounding the channel region. An upper portion of the fin is removed so as to form a hollow channel underneath the dummy gate. A replacement channel layer is in-situ epitaxially grown in the hollow channel.
    Type: Grant
    Filed: July 3, 2019
    Date of Patent: May 5, 2020
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Yen-Hsing Chen, Chun-Yu Chen, Chung-Ting Huang, Zih-Hsuan Huang, Yu-Chien Sung
  • SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20190326414
    Abstract: A method for fabricating a semiconductor device is disclosed. A fin is formed on a substrate. The fin protrudes from a trench isolation layer on a substrate. The fin comprises a source region, a drain region and a channel region therebetween. A dummy gate strides across the fin and surrounding the channel region. An upper portion of the fin is removed so as to form a hollow channel underneath the dummy gate. A replacement channel layer is in-situ epitaxially grown in the hollow channel.
    Type: Application
    Filed: July 3, 2019
    Publication date: October 24, 2019
    Inventors: Yen-Hsing Chen, Chun-Yu Chen, Chung-Ting Huang, Zih-Hsuan Huang, Yu-Chien Sung
  • Semiconductor device and method for fabricating the same
    Patent number: 10388756
    Abstract: A method for fabricating a semiconductor device is disclosed. A fin is formed on a substrate. The fin protrudes from a trench isolation layer on a substrate. The fin comprises a source region, a drain region and a channel region therebetween. A dummy gate strides across the fin and surrounding the channel region. An upper portion of the fin is removed so as to form a hollow channel underneath the dummy gate. A replacement channel layer is in-situ epitaxially grown in the hollow channel.
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: August 20, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Yen-Hsing Chen, Chun-Yu Chen, Chung-Ting Huang, Zih-Hsuan Huang, Yu-Chien Sung
  • SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20190221655
    Abstract: A method for fabricating a semiconductor device is disclosed. A fin is formed on a substrate. The fin protrudes from a trench isolation layer on a substrate. The fin comprises a source region, a drain region and a channel region therebetween. A dummy gate strides across the fin and surrounding the channel region. An upper portion of the fin is removed so as to form a hollow channel underneath the dummy gate. A replacement channel layer is in-situ epitaxially grown in the hollow channel.
    Type: Application
    Filed: January 12, 2018
    Publication date: July 18, 2019
    Inventors: Yen-Hsing Chen, Chun-Yu Chen, Chung-Ting Huang, Zih-Hsuan Huang, Yu-Chien Sung