Patents by Inventor Yu-Chih Yang
Yu-Chih Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240090230Abstract: A memory array and an operation method of the memory array are provided. The memory array includes first and second ferroelectric memory devices formed along a gate electrode, a channel layer and a ferroelectric layer between the gate electrode and the channel layer. The ferroelectric memory devices include: a common source/drain electrode and two respective source/drain electrodes, separately in contact with a side of the channel layer opposite to the ferroelectric layer, wherein the common source/drain electrode is disposed between the respective source/drain electrodes; and first and second auxiliary gates, capacitively coupled to the channel layer, wherein the first auxiliary gate is located between the common source/drain electrode and one of the respective source/drain electrodes, and the second auxiliary gate is located between the common source/drain electrode and the other respective source/drain electrode.Type: ApplicationFiled: January 9, 2023Publication date: March 14, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wen-Ling Lu, Chen-Jun Wu, Ya-Yun Cheng, Sheng-Chih Lai, Yi-Ching Liu, Yu-Ming Lin, Feng-Cheng Yang, Chung-Te Lin
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Patent number: 10391163Abstract: A vaccine composition is disclosed. The vaccine composition comprises: (a) a therapeutically effective amount of an influenza virus-like particle (VLP) comprising: (i) influenza M1, influenza M2, influenza hemagglutinin (HA), and influenza neuraminidase (NA) proteins; (b) Foot-and-mouth disease virus (FMDV) capsid protein VP3, recombinant FMDV VP3 (rVP3), VP3 peptide, or SUMO VP3; and (c) alum. Also disclosed is use of a vaccine composition according to the invention in the manufacture of a medicament for inducing an immunogenic response in a subject in need thereof.Type: GrantFiled: September 9, 2016Date of Patent: August 27, 2019Assignee: Academia SinicaInventors: Shu-Mei Liang, Pei-Wen Hsiao, Ming-Chu Cheng, Yu-Chih Yang
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Publication number: 20180243402Abstract: A vaccine composition is disclosed. The vaccine composition comprises: (a) a therapeutically effective amount of an influenza virus-like particle (VLP) comprising: (i) influenza M1, influenza M2, influenza hemagglutinin (HA), and influenza neuraminidase (NA) proteins; (b) Foot-and-mouth disease virus (FMDV) capsid protein VP3, recombinant FMDV VP3 (rVP3), VP3 peptide, or SUMO VP3; and (c) alum. Also disclosed is use of a vaccine composition according to the invention in the manufacture of a medicament for inducing an immunogenic response in a subject in need thereof.Type: ApplicationFiled: September 9, 2016Publication date: August 30, 2018Inventors: Shu-Mei LIANG, Pei-Wen HSIAO, Ming-Chu CHENG, Yu-Chih YANG
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Publication number: 20160056351Abstract: Disclosed is a light-emitting device. The light-emitting device comprises a light-emitting stack comprising an active layer; a substrate above the active layer, the substrate comprising a first surface and a second surface which is opposite to the first surface and is closer to the active layer than the first surface, wherein the substrate comprises a recess which is circumscribed by a part of the first surface; and a first electrode in the recess. A method for forming the light-emitting device is also disclosed.Type: ApplicationFiled: August 22, 2014Publication date: February 25, 2016Inventors: Yu Chih YANG, Wu Tsung LO
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Patent number: 9269862Abstract: A light-emitting device includes: a Distributed Bragg reflector comprising alternate first semiconductor layers and second semiconductor layers, wherein each first semiconductor layer comprises a low-refractive-index part having a depth; and a light-emitting semiconductor stack associated with the Distributed Bragg reflector; wherein the depths of the low-refractive-index parts of the first semiconductor layers are gradually changed in a direction toward the light-emitting semiconductor stack.Type: GrantFiled: November 29, 2013Date of Patent: February 23, 2016Assignee: EPISTAR CORPORATIONInventors: Wu-Tsung Lo, Yu-Chih Yang, Chien-Ming Wu, Kai-Yi Hong
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Patent number: 9136186Abstract: Disclosed is an apparatus and method for yield enhancement of making a semiconductor device. The apparatus for yield enhancement of making a semiconductor device comprises: a semiconductor device comprising an epitaxial layer in which a defect is included, and a photo-resistor on the epitaxial layer and covering the defect; an image recognition system to detect and identify a location of the defect; and an exposing module comprising a first light source to expose a part of the photo-resistor substantially corresponding to the detected defect identified by the image recognition system.Type: GrantFiled: January 15, 2013Date of Patent: September 15, 2015Assignee: EPISTAR CORPORATIONInventors: Yu-Chih Yang, Wu-Tsung Lo
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Patent number: 9123634Abstract: Disclosed is a method for yield enhancement of making a semiconductor device. The method for yield enhancement of making a semiconductor device comprises the steps of: providing the semiconductor device comprising an epitaxial layer including a defect; forming a dielectric layer on the epitaxial layer; detecting and identifying a location of the defect; and etching the dielectric layer and leaving a part of the dielectric layer to cover an area substantially corresponding to the detected defect. The semiconductor device made by the method is also disclosed.Type: GrantFiled: January 10, 2014Date of Patent: September 1, 2015Assignee: EPISTAR CORPORATIONInventors: Yi Hung Lin, Yu Chih Yang, Wu Tsung Lo
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Publication number: 20150155433Abstract: A light-emitting device includes: a Distributed Bragg reflector comprising alternate first semiconductor layers and second semiconductor layers, wherein each first semiconductor layer comprises a low-refractive-index part having a depth; and a light-emitting semiconductor stack associated with the Distributed Bragg reflector; wherein the depths of the low-refractive-index parts of the first semiconductor layers are gradually changed in a direction toward the light-emitting semiconductor stack.Type: ApplicationFiled: November 29, 2013Publication date: June 4, 2015Applicant: EPISTAR CORPORATIONInventors: Wu-Tsung Lo, Yu-Chih Yang, Chien-Ming Wu, Kai-Yi Hong
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Patent number: 8889436Abstract: A method for manufacturing optoelectronic devices comprising the steps of: providing a common growth substrate; forming a light-emitting epitaxy structure on the common growth substrate; forming a stripping layer on the light-emitting epitaxy structure; forming a solar cell epitaxy structure on the stripping layer; forming an adhesive layer on the solar cell epitaxy structure; proving a solar cell permanent substrate on the adhesive layer; and removing the stripping layer to form a light-emitting device and a solar cell device separately.Type: GrantFiled: April 25, 2012Date of Patent: November 18, 2014Assignee: Epistar CorporationInventors: Wu-Tsung Lo, Yu-Chih Yang, Rong-Ren Lee
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Patent number: 8884157Abstract: A method for manufacturing an optoelectronic device includes steps of: providing an optoelectronic structure; forming a first metal contact layer having a pattern on the upper surface of the optoelectronic structure; forming a dielectric layer on the first metal contact layer and the optoelectronic structure; removing the dielectric layer on the first metal contact layer; and forming an electrode structure on the first metal contact layer.Type: GrantFiled: May 11, 2012Date of Patent: November 11, 2014Assignee: Epistar CorporationInventors: Yi-Hung Lin, Yu-Chih Yang, Wu-Tsung Lo
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Publication number: 20140196782Abstract: Disclosed is a method for yield enhancement of making a semiconductor device. The method for yield enhancement of making a semiconductor device comprises the steps of: providing the semiconductor device comprising an epitaxial layer including a defect; forming a dielectric layer on the epitaxial layer; detecting and identifying a location of the defect; and etching the dielectric layer and leaving a part of the dielectric layer to cover an area substantially corresponding to the detected defect. The semiconductor device made by the method is also disclosed.Type: ApplicationFiled: January 10, 2014Publication date: July 17, 2014Applicant: EPISTAR CORPORATIONInventors: Yi Hung LIN, Yu Chih YANG, Wu Tsung LO
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Publication number: 20140199784Abstract: Disclosed is an apparatus and method for yield enhancement of making a semiconductor device. The apparatus for yield enhancement of making a semiconductor device comprises: a semiconductor device comprising an epitaxial layer in which a defect is included, and a photo-resistor on the epitaxial layer and covering the defect; an image recognition system to detect and identify a location of the defect; and an exposing module comprising a first light source to expose a part of the photo-resistor substantially corresponding to the detected defect identified by the image recognition system.Type: ApplicationFiled: January 15, 2013Publication date: July 17, 2014Applicant: EPISTAR CORPORATIONInventors: Yu-Chih Yang, Wu-Tsung Lo
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Publication number: 20130298972Abstract: A method for manufacturing an optoelectronic device includes steps of: providing an optoelectronic structure; forming a first contact layer having a pattern on the upper surface of the optoelectronic structure; forming a dielectric layer on the first contact layer and the optoelectronic structure; removing the dielectric layer on the first contact layer; and forming an electrode structure on the first contact layer.Type: ApplicationFiled: May 11, 2012Publication date: November 14, 2013Applicant: EPISTAR CORPORATIONInventors: Yi-Hung Lin, Yu-Chih Yang, Wu-Tsung Lo
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Publication number: 20130286634Abstract: A method for manufacturing optoelectronic devices comprising the steps of: providing a common growth substrate; forming a light-emitting epitaxy structure on the common growth substrate; forming a stripping layer on the light-emitting epitaxy structure; forming a solar cell epitaxy structure on the stripping layer; forming an adhesive layer on the solar cell epitaxy structure; proving a solar cell permanent substrate on the adhesive layer; and removing the stripping layer to form a light-emitting device and a solar cell device separately.Type: ApplicationFiled: April 25, 2012Publication date: October 31, 2013Applicant: EPISTAR CORPORATIONInventors: Wu-Tsung LO, Yu-Chih Yang, Rong-Ren Lee
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Patent number: 7888162Abstract: This application discloses a method of manufacturing a photoelectronic device comprising steps of providing a semiconductor stack layer, forming at least one metal adhesive on the semiconductor stack layer by a printing technology, forming an electrode by heating the metal adhesive to remove the solvent in the metal adhesive, wherein an ohmic contact is formed between the electrode and the semiconductor stack layer.Type: GrantFiled: July 29, 2009Date of Patent: February 15, 2011Assignee: Epistar CorporationInventors: Yu-Ling Chin, Li-Pin Jou, Yu-Chih Yang, Yu-Cheng Yang, Wei-Shou Chen, Cheng-Ta Kuo
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Publication number: 20110005595Abstract: The application illustrates a solar cell module, included a base device, a solar cell on the base device, and a concentrator on the solar cell. The concentrator directly contacts with the solar cell and concentrates the light to the solar cell for opto-electric transformation.Type: ApplicationFiled: July 13, 2010Publication date: January 13, 2011Inventors: Yu-Chih YANG, Wu-Tsung Lo
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Publication number: 20100258171Abstract: A solar photovoltaic device is provided and includes a solar cell body, a window layer on the solar cell body, and a current collection layer on the window layer. The current collection layer includes a patterned structure, and a portion of the window layer is exposed by the patterned structure.Type: ApplicationFiled: April 9, 2010Publication date: October 14, 2010Inventors: Yung-Szu Su, Tsung-Hsien Liu, Wu-Tsung Lo, Shih-Chang Lee, Yu-Chih Yang
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Publication number: 20100029035Abstract: This application discloses a method of manufacturing a photoelectronic device comprising steps of providing a semiconductor stack layer, forming at least one metal adhesive on the semiconductor stack layer by a printing technology, forming an electrode by heating the metal adhesive to remove the solvent in the metal adhesive, wherein an ohmic contact is formed between the electrode and the semiconductor stack layer.Type: ApplicationFiled: July 29, 2009Publication date: February 4, 2010Inventors: Yu-Ling Chin, Li-Pin Jou, Yu-Chih Yang, Yu-Cheng Yang, Wei-Shou Chen, Cheng-Ta Kuo