Abstract: A semiconductor device is provided. The semiconductor device includes a first doped region and a second doped region of a first conductive type and a third doped region of a second conductive type located in a substrate. The second doped region is located at a side of the first doped region. A top-view pattern of the second doped region has at least one recess portion. The third doped region is located between the first doped region and the second doped region. A top-view pattern of the third doped region has at least one protruded portion corresponding to the at least one recess portion.

Abstract: A semiconductor device is provided. The semiconductor device includes a first doped region and a second doped region of a first conductive type and a third doped region of a second conductive type located in a substrate. The second doped region is located at a side of the first doped region. A top-view pattern of the second doped region has at least one recess portion. The third doped region is located between the first doped region and the second doped region. A top-view pattern of the third doped region has at least one protruded portion corresponding to the at least one recess portion.

Abstract: A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and formed in the substrate, a drift region formed in the high-voltage well, a drain region formed in the high-voltage well and spaced apart from the drift region, and a buried region having the first conductivity type formed in the high-voltage well between the drift region and the drain region.

Abstract: A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and disposed in the substrate, a high-voltage doped region having the first conductivity type and disposed in the high-voltage well, a drain region disposed in the high-voltage well and spaced apart from the high-voltage doped region, a source region disposed in the high-voltage doped region, a first gate structure disposed above a first side portion of the high-voltage doped region between the source region and the drain region, and a second gate structure disposed above a second and opposite side portion of the high-voltage doped region.

Abstract: A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and disposed in the substrate, a high-voltage doped region having the first conductivity type and disposed in the high-voltage well, a drain region disposed in the high-voltage well and spaced apart from the high-voltage doped region, a source region disposed in the high-voltage doped region, a first gate structure disposed above a first side portion of the high-voltage doped region between the source region and the drain region, and a second gate structure disposed above a second and opposite side portion of the high-voltage doped region.

Abstract: A plug connector suitable for connecting with a socket connector including a first internal screw thread is provided. The plug connector includes an internal casing having an inside space, a set of terminals disposed in said inside space, a sleeve tube and an external casing. The sleeve tube is fixed to said internal casing and includes an external hook. The external casing is movably covered to said internal casing and includes a first external screw thread, an internal hook and a concaved slot caving in the inner surface of the external casing facing to said internal casing. The internal hook forms one of walls of said concaved slot. The external hook is movably disposed in said concaved slot. When said socket connector screws to said plug connector, said external casing is pulled toward said socket connector, and said internal hook of said external casing contact said external hook of said sleeve tube.

Abstract: A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and formed in the substrate, a drift region formed in the high-voltage well, a drain region formed in the high-voltage well and spaced apart from the drift region, and a buried region having the first conductivity type formed in the high-voltage well between the drift region and the drain region.

Abstract: A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and formed in the substrate, a source well having the first conductivity type and formed in the high-voltage well, a source region formed in the source well, an isolation layer formed above the high-voltage well and spaced apart from the source well, a gate layer formed above the substrate and continuously extending from above an edge portion of the source well to an edge portion of the isolation layer, and a metal layer formed above the substrate and the isolation layer. The metal layer includes a first metal portion overlapping an edge portion of the gate layer and a side portion of the isolation layer, a second metal portion overlapping and conductively contacting the gate layer, and a third metal portion overlapping and conductively contacting the source region.

Abstract: A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and formed in the substrate, a source well having the first conductivity type and formed in the high-voltage well, a source region formed in the source well, an isolation layer formed above the high-voltage well and spaced apart from the source well, a gate layer formed above the substrate and continuously extending from above an edge portion of the source well to an edge portion of the isolation layer, and a metal layer formed above the substrate and the isolation layer. The metal layer includes a first metal portion overlapping an edge portion of the gate layer and a side portion of the isolation layer, a second metal portion overlapping and conductively contacting the gate layer, and a third metal portion overlapping and conductively contacting the source region.

Abstract: An electrical connector includes a connecting casing, a terminal assembly and a receiving member, in favor to attaching on a cable. Each rear end of a plurality of terminals of the terminal assembly protrude to a terminal carrier of the terminal assembly in furtherance to penetrate through the receiving member up till the terminals being exposed out of a rear-side socket of the connecting casing.

Abstract: The disclosure provides a curable silicone resin composition, including 10 to 50 parts by weight of linear polysiloxane (A); 10 to 40 parts by weight of a first silicone resin (B1); 10 to 40 parts by weight of a second silicone resin (B2); and 15 to 25 parts by weight of a Si—H containing polysiloxane (C) having a general formula given as HR42SiO(SiR32O)nSiR42H, and a platinum group metal catalyst (D). The weight ratio of linear (A)/(the first silicone resin (B1)+the second silicone resin (B2)) is in the range of 0.1 to 2.0. The weight ratio of the first silicone resin (B1)/the second silicone resin (B2) is in the range of 0.2 to 4.0.

Abstract: The electrical connector comprises the shielding component provided with a hollow chamber. The principle housing installed in said hollow chamber, including a main body and a tongue protruded from said main body in a longitudinal direction, wherein said tongue is more closer to said opening, and a vacant portion provided by the bottom of said main body, a plurality of first compressed terminals been insert-molded to an upper surface of said main body. A plurality of second compressed terminals been insert-molded to said main body and received by said recessions. A supplementary housing disposed in part of said vacant portion nearby the location of said tongue. A plurality of liberative terminals been retained on said supplementary housing.

Abstract: The disclosure provides a curable silicone resin composition, including 10 to 50 parts by weight of linear polysiloxane (A); 10 to 40 parts by weight of a first silicone resin (B1); 10 to 40 parts by weight of a second silicone resin (B2); and 15 to 25 parts by weight of a Si—H containing polysiloxane (C) having a general formula given as HR42SiO(SiR32O)nSiR42H, and a platinum group metal catalyst (D). The weight ratio of linear (A)/(the first silicone resin (B1)+the second silicone resin (B2)) is in the range of 0.1 to 2.0. The weight ratio of the first silicone resin (B1)/the second silicone resin (B2) is in the range of 0.2 to 4.0.

Abstract: A plug connector suitable for connecting with a socket connector including a first internal screw thread is provided. The plug connector includes an internal casing having an inside space, a set of terminals disposed in said inside space, a sleeve tube and an external casing. The sleeve tube is fixed to said internal casing and includes an external hook. The external casing is movably covered to said internal casing and includes a first external screw thread, an internal hook and a concaved slot caving in the inner surface of the external casing facing to said internal casing. The internal hook forms one of walls of said concaved slot. The external hook is movably disposed in said concaved slot. When said socket connector screws to said plug connector, said external casing is pulled toward said socket connector, and said internal hook of said external casing contact said external hook of said sleeve tube.

Abstract: A plug connector includes an insulative body, a housing and a plurality of terminals, and electrically connects to an electrical cable in a manner of insulation-displacement. The insulative body defines a top piece having an external thread of a first screw portion in one end, and defines a plurality of inserting grooves disposed with the terminals. The housing defines an interior space communicating with the inserting grooves, and defines an inner thread of a second screw portion in one end. The interior space accommodates a holding block remaining an electrical conductor of the electrical cable bent out. The housing connects the insulative body with the inner thread to the external thread.

Abstract: A plug connector includes an insulative body, a housing and a plurality of terminals, and electrically connects to an electrical cable in a manner of insulation-displacement. The insulative body defines a top piece having an external thread of a first screw portion in one end, and defines a plurality of inserting grooves disposed with the terminals. The housing defines an interior space communicating with the inserting grooves, and defines an inner thread of a second screw portion in one end. The interior space accommodates a holding block remaining an electrical conductor of the electrical cable bent out. The housing connects the insulative body with the inner thread to the external thread.