Abstract: A method of manufacturing a metal oxide semiconductor thin film transistor includes forming a gate; forming a first gate insulating layer in contact with the gate under a hydrogen content greater than 100 ppm and an oxygen content greater than 2800 ppm; forming a second gate insulating layer in contact with the first gate insulating layer under a hydrogen content lower than or equal to 100 ppm and an oxygen content lower than or equal to 2800 ppm; forming a metal oxide semiconductor layer in contact with the second gate insulating layer, in which the second gate insulating layer is between the first gate insulating layer and the metal oxide semiconductor layer; and forming a source and a drain in contact with the metal oxide semiconductor layer.

Abstract: A metal oxide semiconductor thin film transistor includes a source, a drain, a metal oxide semiconductor layer, a gate, a first gate insulating layer and a second gate insulating layer. The metal oxide semiconductor layer is in contact with a portion of the source and a portion of the drain. The first gate insulating layer is interposed between the metal oxide semiconductor layer and the gate and in contact with the gate. The second gate insulating layer is interposed between the metal oxide semiconductor layer and the gate and in contact with the metal oxide semiconductor layer.

Abstract: A package structure of light-emitting device comprises a substrate. Two lines are formed on the substrate. An insulating layer is formed between two lines. A plurality of light-emitting sources are formed on the substrate for generating the light. Each light-emitting source has a positive electrode and a negative electrode. A plurality of leading wires are respectively connected to two lines from the positive electrode and the negative electrode of the light-emitting source to form an electrical connection.