Abstract: A semiconductor device includes a gate structure on a substrate, in which the gate structure includes a main branch extending along a first direction on the substrate and a sub-branch extending along a second direction adjacent to the main branch. The semiconductor device also includes a first doped region overlapping the main branch and the sub-branch according to a top view and a second doped region overlapping the first doped region.

Abstract: A method of manufacturing a carrying substrate is provided. At least one circuit component is disposed on a first circuit structure. An encapsulation layer is formed on the first circuit structure and encapsulates the circuit component. A second circuit structure is formed on the encapsulation layer and electrically connected to the circuit component. The circuit component is embedded in the encapsulation layer via an existing packaging process. Therefore, the routing area is increased, and a package substrate requiring a large size has a high yield and low manufacturing cost.

Abstract: An additive manufacturing apparatus includes a main system and a cleaning transportation system separated from the main system. The main system includes an additive manufacturing module. The additive manufacturing module includes an additive manufacturing chamber. The additive manufacturing chamber includes a powder discharging openings and a vibration unit. The powder discharging openings are formed at a lower portion of the additive manufacturing chamber, and the powders in the additive manufacturing chamber are discharged down via gravitation. The vibrational unit is for vibrating the powders so as to accelerate downward powder discharging via vibration of the vibrational unit. The present application solves the conventional problems of excessive consumed energy, large required installation and operational space, inconvenience of powder removing and swirled raised powder haze in the environment.

Abstract: The curved flow channel with built-in lattice structure provided by the present application is configured with the lattice structure disposed at the outer inside wall of the curved section away from a center of curvature of the curved section. Through geometry and distribution design of the lattice structure, flow rate and flow direction of fluid impacting the lattice structure can be altered, which achieves the purpose of flow rate redistribution in the curved flow channel and produces a downstream flow field with uniform distribution.

Abstract: The curved flow channel with built-in lattice structure provided by the present application is configured with the lattice structure disposed at the outer inside wall of the curved section away from a center of curvature of the curved section. Through geometry and distribution design of the lattice structure, flow rate and flow direction of fluid impacting the lattice structure can be altered, which achieves the purpose of flow rate redistribution in the curved flow channel and produces a downstream flow field with uniform distribution.

Abstract: The present application discloses an additive manufacturing chamber, an additive manufacturing module and an additive manufacturing apparatus therewith. Powder discharging openings are formed at a lower portion of the additive manufacturing chamber, and the powders in the additive manufacturing chamber are discharged down via gravitation. The present application further includes a vibrational unit for vibrating the powders so as to accelerate downward powder discharging via vibration of the vibrational unit. The additive manufacturing apparatus can include a main system and a cleaning transportation system separated from the main system. The present application solves the conventional problems of excessive consumed energy, large required installation and operational space, inconvenience of powder removing and swirled raised powder haze in the environment.