Abstract: A semiconductor structure includes a semiconductor substrate; fin active regions protruded above the semiconductor substrate; and a gate stack disposed on the fin active regions; wherein the gate stack includes a high-k dielectric material layer, and various metal layers disposed on the high-k dielectric material layer. The gate stack has an uneven profile in a sectional view with a first dimension D1 at a top surface, a second dimension D2 at a bottom surface, and a third dimension D3 at a location between the top surface and the bottom surface, and wherein each of D1 and D2 is greater than D3.

Abstract: Provided is a method for preparing a tissue section, including treating a tissue specimen with a clearing agent and at least one labeling agent to obtain a cleared and labeled tissue specimen; generating a three-dimensional (3D) image of the cleared and labeled tissue specimen; performing an image slicing procedure on the 3D image to generate a plurality of two-dimensional (2D) images; identifying a target 2D image among the plurality of 2D images to obtain a distance value of D1, which indicates the distance between the target 2D image and a predetermined surface of the 3D image; preparing a hardened tissue specimen from the cleared and labeled tissue specimen; and cutting the hardened tissue specimen near a predetermined site to obtain a tissue section, wherein the distance between the predetermined site and a surface of the hardened tissue specimen corresponding to the predetermined surface of the 3D image is D1.

Abstract: A resistive random access memory (ReRAM) apparatus is provided. The ReRAM apparatus includes a plurality of memory cells, each of the memory cells comprises a transistor and a resistor; a bit line connected to a first terminal of the resistor of each of the memory cells; a local source line connected to a source electrode of the transistor of each of the memory cells; and a driving cell connected between the local source line and a global source line. A method for operating the ReRAM apparatus is also provided.

Abstract: A semiconductor structure that includes a first semiconductor fin and a second semiconductor fin disposed over a substrate and adjacent to each other, a metal gate stack disposed over the substrate, and source/drain features disposed in each of the first semiconductor fin and the second semiconductor fin to engage with the metal gate stack. The metal gate stack includes a first region disposed over the first semiconductor fin, a second region disposed over the second semiconductor fin, and a third region connecting the first region to the second region in a continuous profile, where the first region is defined by a first gate length and the second region is defined by a second gate length less than the first gate length.

Abstract: Disclosed herein are electrospun fibrous matrix and its production method. The method mainly includes the steps of, mixing a first polymer and a drug to form a first mixture, and sonicating the first mixture until a plurality of microparticles are formed with the drug encapsulated therein; and mixing the plurality of microparticles with a second polymer to form a second mixture, subjecting the second mixture to a wet electrospinning process to form the electrospun fibrous matrix. The thus-produced electrospun fibrous matrix is characterized by having a plurality of first and second fibrils woven together, in which each second fibril has a plurality of drug-encapsulated microparticles independently integrated and disposed along the longitudinal direction of the second fibril. Also disclosed herein is a method for treating a wound of a subject. The method includes applying the present electrospun fibrous matrix to the wound of the subject.

Abstract: Some implementations described herein provide an inductor device formed in a substrate of a semiconductor device including an integrated circuit device. The inductor device may use one or more conduction layers that are included in the substrate. Furthermore, the inductor device may be electrically coupled to the integrated circuit device. By forming the inductor device in the substrate of the semiconductor device, an electrical circuit including the inductor device and the integrated circuit device may be formed within a single semiconductor device.

Abstract: A package structure and method of forming the same are provided. The package structure includes a first die and a second die disposed side by side, a first encapsulant laterally encapsulating the first and second dies, a bridge die disposed over and connected to the first and second dies, and a second encapsulant. The bridge die includes a semiconductor substrate, a conductive via and an encapsulant layer. The semiconductor substrate has a through substrate via embedded therein. The conductive via is disposed over a back side of the semiconductor substrate and electrically connected to the through substrate via. The encapsulant layer is disposed over the back side of the semiconductor substrate and laterally encapsulates the conductive via. The second encapsulant is disposed over the first encapsulant and laterally encapsulates the bridge die.

Abstract: A method for fabricating a semiconductor device includes the steps of forming a metal gate on a substrate, a spacer around the metal gate, and a first interlayer dielectric (ILD) layer around the spacer, performing a plasma treatment process to transform the spacer into a first bottom portion and a first top portion, performing a cleaning process to remove the first top portion, and forming a second ILD layer on the metal gate and the first ILD layer.

Abstract: A method for fabricating a semiconductor device includes the steps of forming a metal gate on a substrate, a spacer around the metal gate, and a first interlayer dielectric (ILD) layer around the spacer, performing a plasma treatment process to transform the spacer into a first bottom portion and a first top portion, performing a cleaning process to remove the first top portion, and forming a second ILD layer on the metal gate and the first ILD layer.

Abstract: A method includes forming a first semiconductor fin protruding from a substrate and forming a gate stack over the first semiconductor fin. Forming the gate stack includes depositing a gate dielectric layer over the first semiconductor fin, depositing a first seed layer over the gate dielectric layer, depositing a second seed layer over the first seed layer, wherein the second seed layer has a different structure than the first seed layer, and depositing a conductive layer over the second seed layer, wherein the first seed layer, the second seed layer, and the conductive layer include the same conductive material. The method also includes forming source and drain regions adjacent the gate stack.

Abstract: A semiconductor structure that includes a first semiconductor fin and a second semiconductor fin disposed over a substrate and adjacent to each other, a metal gate stack disposed over the substrate, and source/drain features disposed in each of the first semiconductor fin and the second semiconductor fin to engage with the metal gate stack. The metal gate stack includes a first region disposed over the first semiconductor fin, a second region disposed over the second semiconductor fin, and a third region connecting the first region to the second region in a continuous profile, where the first region is defined by a first gate length and the second region is defined by a second gate length less than the first gate length.

Abstract: A memory array and an operation method of the memory array are provided. The memory array includes first and second ferroelectric memory devices formed along a gate electrode, a channel layer and a ferroelectric layer between the gate electrode and the channel layer. The ferroelectric memory devices include: a common source/drain electrode and two respective source/drain electrodes, separately in contact with a side of the channel layer opposite to the ferroelectric layer, wherein the common source/drain electrode is disposed between the respective source/drain electrodes; and first and second auxiliary gates, capacitively coupled to the channel layer, wherein the first auxiliary gate is located between the common source/drain electrode and one of the respective source/drain electrodes, and the second auxiliary gate is located between the common source/drain electrode and the other respective source/drain electrode.

Abstract: A method for fabricating a semiconductor device includes the steps of forming a metal gate on a substrate, a spacer around the metal gate, and a first interlayer dielectric (ILD) layer around the spacer, performing a plasma treatment process to transform the spacer into a first bottom portion and a first top portion, performing a cleaning process to remove the first top portion, and forming a second ILD layer on the metal gate and the first ILD layer.

Abstract: An ultra-wideband antenna device is disposed on a casing of an electronic device. The ultra-wideband antenna device includes radio frequency terminals, a first antenna module, a second antenna module, and a switch module. The radio frequency terminals, the first antenna module and the switch module are located in the casing. The first antenna module is located on a metal frame of the casing, and the first antenna module includes a first antenna. The second antenna module includes a second antenna, a third antenna, and a fourth antenna. The switch module is connected between the radio frequency terminals and the first antenna module. When the switch module turns on one of the radio frequency terminals and the first antenna for distance measurement, the switch module selectively turns on at least one of the second antenna, the third antenna, or the fourth antenna.

Abstract: An ultra-wideband antenna device includes a radiation metal body, a first slotted hole, a second slotted hole, a third slotted hole, a fourth slotted hole, a ground point, and a feeding source. The radiation metal body includes a first side edge and a second side edge opposite to each other and a third side edge and a fourth side edge opposite to each other, the first slotted hole extends inward from the first side edge, the second slotted hole extends inward from the second side edge, the third slotted hole extends inward from the third side edge, and the fourth slotted hole extends inward from the fourth side edge. The ground point is located at a middle position of the radiation metal body, and the feeding source is located on the radiation metal body and away from the middle position.

Abstract: Disclosed in the present invention is a system for forming a product package by online forming, filling and sealing, the system comprising: a sterilization apparatus, a forming apparatus, a conveyor belt, a filling apparatus and a first closing apparatus. Also disclosed is a method for forming a product package by online forming, filling and sealing. The method of the present invention integrates production and filling of large-volume packages, greatly shortening the supply chain and increasing production efficiency.

Abstract: Disclosed in the present invention is a system for forming a product package by online forming, filling and sealing, the system comprising: a sterilization apparatus, a forming apparatus, a conveyor belt, a filling apparatus and a first closing apparatus. Also disclosed is a method for forming a product package by online forming, filling and sealing. The method of the present invention integrates production and filling of large-volume packages, greatly shortening the supply chain and increasing production efficiency.

Abstract: A display panel includes a first substrate, first gate lines, first data lines, second data lines, third data lines, fourth data lines, first sub-pixels, second sub-pixels and first shielding electrodes. The first substrate has a plurality of first sub-pixel regions and second sub-pixel regions. The first gate lines extend along a first direction. The first data lines, the second data lines, the third data lines and the fourth data lines extend along a second direction and are sequentially arranged in the first direction. The first sub-pixel is electrically connected to one of the first data line and the second data line. The second sub-pixel is electrically connected to one of the third data line and the fourth data line. The first shielding electrodes extend along the second direction and are disposed in a common boundary between the first sub-pixel region and the second sub-pixel region adjacent to each other.

Abstract: A pixel structure including a first electrode layer, a second electrode layer and a liquid crystal layer is provided. The first electrode layer includes a plurality of first electrodes and a plurality of second electrodes, wherein the first electrodes are used for receiving a first driving voltage, and the second electrodes are used for receiving a second driving voltage. The second electrode layer includes a plurality of third electrodes and a plurality of fourth electrodes, wherein the third electrodes are used for receiving a third driving voltage and the fourth electrodes are used for receiving a fourth driving voltage. The liquid crystal layer is disposed between the first electrode layer and the second electrode layer. The first electrodes and the second electrodes are alternately disposed along a first direction parallel to the liquid crystal layer, and the third electrodes and the fourth electrodes are alternately disposed along the first direction.

Abstract: A pixel array includes pixel units. A gate of a sharing switch device is electrically connected to a signal line. A source of the sharing switch device is electrically connected to an active device and a sub-pixel electrode. A terminal of a first capacitance Cpp is electrically connected to the source of the sharing switch device and the sub-pixel electrode. Another terminal of the first capacitance Cpp is electrically connected to a main pixel electrode of the next pixel unit. A terminal of a second capacitance Ccc is electrically connected to a drain of the sharing switch device. Another terminal of the second capacitance Ccc is electrically connected to the main pixel electrode of the next pixel unit. 5%?(Ccc/Cpp)?25%.