Abstract: An atomic layer etching method capable of precisely etching a metal thin film at units of atomic layer from a substrate including the metal thin film, includes forming a metal layer on a substrate, and etching at least a portion of the metal layer. The etching at least a portion of the metal layer includes at least one etching cycle. The at least one etching cycle includes supplying an active gas onto the metal layer, and supplying an etching support gas after supplying the active gas. The etching support gas is expressed by the following general formula wherein each of R1, R2, R3, R4 and R5 independently includes hydrogen or a C1-C4 alkyl group, and N is nitrogen.

Abstract: A display device includes pixels, and first, second, and third gate lines and data lines connected to the pixels. At least one of the pixels includes a light emitting element, a first transistor connected between a first power source and the light emitting element for driving the light emitting element according to a voltage of a first node, a second transistor connected between the first node and a corresponding data line, and driven according to a voltage of a corresponding first gate line, a capacitor connected between the first node and a second node between the first transistor and the light emitting element, a third transistor between the second node and an initialization power line, and driven according to a voltage of a corresponding second gate line, and a fourth transistor connected between the first and second nodes, and driven according to a voltage of a corresponding third gate line.

Abstract: An atomic layer etching method capable of precisely etching a metal thin film at units of atomic layer from a substrate including the metal thin film, includes forming a metal layer on a substrate, and etching at least a portion of the metal layer. The etching at least a portion of the metal layer includes at least one etching cycle. The at least one etching cycle includes supplying an active gas onto the metal layer, and supplying an etching support gas after supplying the active gas. The etching support gas is expressed by the following general formula wherein each of R1, R2, R3, R4 and R5 independently includes hydrogen or a C1-C4 alkyl group, and N is nitrogen.

Abstract: A friction apparatus is provided. The friction apparatus includes: a first member having a first surface; and a second member having a second surface that contacts the first surface, and moving while in contact with the first member, wherein at least one of the first surface and the second surface is hardened.

Abstract: A friction apparatus is provided. The friction apparatus includes: a first member having a first surface; and a second member having a second surface that contacts the first surface, and moving while in contact with the first member, wherein at least one of the first surface and the second surface is hardened.

Abstract: The system and method of the present invention provide integrated or embedded components, for electronic (or other) products, each operable to securely store and selectively provide access to, a unique ID (UID) previously assigned to its corresponding specific product, where the UID of each product is registered with one or more particular UID registration centers over at least one communication network, and associated with one or more data records stored in a corresponding database file at the particular UID registration center, the data records being inclusive of information related to the product, the product purchase history, current ownership, etch, and wherein one or more authorized parties may subsequently advantageously utilize at least one UID (and optionally a verifier) to access, verify, edit, transfer, transmit, and/or otherwise manage at least one information item related to the one or more corresponding registered products in their UID registration center database file.

Abstract: A modulation driver for delivering an output modulation current for driving an optical source of an optical transmitter, the output modulation current comprises a first modulation current region characterised with a first temperature gradient and a second modulation current region characterised with a second temperature gradient, said first modulation current region and said second modulation region being for delivering modulation current at a first temperature range and a second temperature range, temperatures of said second temperature being higher than temperatures of said first temperature range, said second temperature gradient being larger than said first temperature gradient.