Abstract: A thin film transistor includes a substrate, a semiconductor layer, a gate insulating layer, a gate, a source and a drain. The semiconductor layer is located above the substrate. The gate insulating layer is located above the semiconductor layer. The gate is located above the gate insulating layer and overlapping with the semiconductor layer. The gate includes a first portion, a second portion and a third portion. The first portion is extending along the surface of the gate insulating layer and directly in contact with the gate insulating layer. The second portion is separated from the gate insulating layer. Taking the surface of the gate insulating layer as a reference, the top surface of the second portion is higher than the top surface of the first portion. The third portion connects the first portion to the second portion. The source and the drain are electrically connected to the semiconductor layer.

Abstract: Provided is a display panel, including a substrate, multiple pixel circuits, an insulating layer, multiple first electrodes, a first isolation structure, and a second isolation structure. The pixel circuits are located on the substrate. The insulating layer is located on the pixel circuits and has multiple through holes. The first electrodes are located on the insulating layer and are respectively electrically connected to the pixel circuits through the through holes. The first isolation structure is located on the insulating layer and overlaps the through holes. The second isolation structure includes multiple separating parts and multiple cover parts. The separating parts and the first isolation structure at least partially overlap, and the cover parts respectively overlap the through holes and the first isolation structure.

Abstract: A thin film transistor includes a substrate, a semiconductor layer, a gate insulating layer, a gate, a source and a drain. The semiconductor layer is located above the substrate. The gate insulating layer is located above the semiconductor layer. The gate is located above the gate insulating layer and overlapping with the semiconductor layer. The gate includes a first portion, a second portion and a third portion. The first portion is extending along the surface of the gate insulating layer and directly in contact with the gate insulating layer. The second portion is separated from the gate insulating layer. Taking the surface of the gate insulating layer as a reference, the top surface of the second portion is higher than the top surface of the first portion. The third portion connects the first portion to the second portion. The source and the drain are electrically connected to the semiconductor layer.

Abstract: A thin film transistor includes a substrate, a semiconductor layer, a gate insulating layer, a gate, a source and a drain. The semiconductor layer is located above the substrate. The gate insulating layer is located above the semiconductor layer. The gate is located above the gate insulating layer and overlapping with the semiconductor layer. The gate includes a first portion, a second portion and a third portion. The first portion is extending along the surface of the gate insulating layer and directly in contact with the gate insulating layer. The second portion is separated from the gate insulating layer. Taking the surface of the gate insulating layer as a reference, the top surface of the second portion is higher than the top surface of the first portion. The third portion connects the first portion to the second portion. The source and the drain are electrically connected to the semiconductor layer.

Abstract: Provided is a display panel, including a substrate, multiple pixel circuits, an insulating layer, multiple first electrodes, a first isolation structure, and a second isolation structure. The pixel circuits are located on the substrate. The insulating layer is located on the pixel circuits and has multiple through holes. The first electrodes are located on the insulating layer and are respectively electrically connected to the pixel circuits through the through holes. The first isolation structure is located on the insulating layer and overlaps the through holes. The second isolation structure includes multiple separating parts and multiple cover parts. The separating parts and the first isolation structure at least partially overlap, and the cover parts respectively overlap the through holes and the first isolation structure.