Abstract: A control circuit for adjusting leading edge blanking time is disclosed. The control circuit is applied to a power converting system. The control circuit adjusts a leading edge blanking time according to a feedback signal relative to a load connected to the output terminal of the power converting system. An over-current protection mechanism of the power converting system is disabled within the leading edge blanking time.

Abstract: A power conversion system and over-load protection device thereof includes a first detection circuit, a charging/discharging circuit, and a second detection circuit. The discharging/charging circuit charges based on a feedback signal relative to output of the power conversion system. A switching-disabling control signal is produced based on the charge of the discharging/charging circuit, to disable the power conversion system.

Abstract: A method for self bonding epitaxy includes forming a passivation layer on a substrate surface of a semiconductor lighting element; etching to form recesses and protrusive portions with the passivation layer located thereon; starting forming epitaxy on the bottom surface of the recesses; filling the recesses with an Epi layer; then covering the protrusive portions and starting self bonding upwards the epitaxy to finish the Epi layer structure. Such a self bonding epitaxy growing technique can prevent cavity generation caused by parameter errors of the epitaxy and reduce defect density, and improve the quality of the Epi layer and increase internal quantum efficiency.

Abstract: A power converting circuit with an open load protection function is electrically connected to a power supply providing a first voltage level, and outputs a second voltage level to drive a load. The power converting circuit includes a DC/DC converter and a rectifying element disposed between an output node and an input node of the DC/DC converter that forms a discharging loop with the DC/DC converter. The DC/DC converter receives the power, converts the first voltage level into the second voltage level and outputs the second voltage level to the load. The rectifying element is utilized to release a surge voltage produced by the DC/DC converter in an open load condition.

Abstract: In a method of forming a crystalline GaN-based material, a first nucleation layer is formed on a substrate at a first temperature, followed with forming a second nucleation layer at a second temperature different from the first temperature. The first and second nucleation layers are composed of AlxInyGa(1-x-y)N. Subsequently, a layer of a crystalline GaN-based compound is epitaxy grown on the second nucleation layer.

Abstract: A light-emitting device comprising a light-emitting unit including a plurality of first connecting pads, a base substrate including a plurality of second connecting pads, and a plurality of conductive bumps that connect the first connecting pads of the light-emitting unit to the second connecting pads of the base substrate. In the manufacturing process, a reflow process is performed to bond the conductive bumps to the first and second connecting pads. The light-emitting unit is configured to emit a first light radiation upon the application of an electric current flow, and the base substrate is configured to emit a second light radiation when stimulated by the first light radiation.

Abstract: A light-emitting device comprises a light-emitting unit including a plurality of first connecting pads, a base substrate including a plurality of second connecting pads, and a plurality of conductive bumps that connect the first connecting pads of the light-emitting unit to the second connecting pads of the base substrate. In the manufacturing process, a reflow process is performed to bond the conductive bumps to the first and second connecting pads. The light-emitting unit is configured to emit a first light radiation upon the application of an electric current flow, and the base substrate is configured to emit a second light radiation when stimulated by the first light radiation.

Abstract: A light-emitting device comprises a multi-layer structure including one or more active layer configured to irradiate light in response to the application of an electric signal, a transparent passivation layer laid over an outmost surface of the multi-layer stack, a reflector layer laid over the passivation layer, and a plurality of electrode pads coupled with the multi-layer structure. In a manufacture process of the light-emitting device, the reflector layer and the passivation layer are patterned to form at least one opening exposing an area of the multi-layer structure. One electrode pad is formed through the opening of the reflector layer and the passivation layer to connect with the multi-layer structure.

Abstract: The present invention discloses a method for fabricating a light-emitting device, wherein a thermosonic bonding process is utilized to join the contacts on a substrate with bond pads on the light-emitting element. Thereby, the deterioration of the substrate can be reduced, and the yield can also be promoted. Further, in the present invention, it is unnecessary to redesign the element specially, and thus, the cost can be lowered.

Abstract: A light-emitting device comprises a multi-layer structure including one or more active layer configured to irradiate light in response to the application of an electric signal, a transparent passivation layer laid over an outmost surface of the multi-layer stack, a reflector layer laid over the passivation layer, and a plurality of electrode pads coupled with the multi-layer structure. In a manufacture process of the light-emitting device, the reflector layer and the passivation layer are patterned to form at least one opening exposing an area of the multi-layer structure.

Abstract: In a method of forming a crystalline GaN-based material, a first nucleation layer is formed on a substrate at a first temperature, followed with forming a second nucleation layer at a second temperature different from the first temperature. The first and second nucleation layers are composed of AlxInyGa(1-x-y)N. Subsequently, a layer of a crystalline GaN-based compound is epitaxy grown on the second nucleation layer.

Abstract: A light-emitting device includes a multi-layer structure configured to emit a first light radiation, and a cap layer covering a surface area of the multi-layer structure while leaving exposed electrode areas defined thereon, wherein the cap layer is made of a material capable of emitting at least one second light radiation when stimulated by the first light radiation. The cap layer, being made of a material blend incorporating a passivation material and a luminescent material compound, is coated on the multi-layer structure.

Abstract: A light-emitting device comprising a light-emitting unit including a plurality of first connecting pads, a base substrate including a plurality of second connecting pads, and a plurality of conductive bumps that connect the first connecting pads of the light-emitting unit to the second connecting pads of the base substrate. In the manufacturing process, a reflow process is performed to bond the conductive bumps to the first and second connecting pads. The light-emitting unit is configured to emit a first light radiation upon the application of an electric current flow, and the base substrate is configured to emit a second light radiation when stimulated by the first light radiation.

Abstract: A storage box for storing a wafer is provided. The wafer storage box includes a main body having a receiving portion having a bottom surface, a plurality of protruding portions formed on the bottom surface for strengthening the main body, a plurality of anti-shock members disposed on the bottom surface, and a cover connected to the main body.

Abstract: A light-emitting device comprises a multi-layer structure including one or more active layer configured to irradiate light in response to the application of an electric signal, a transparent passivation layer laid over an outmost surface of the multi-layer stack, a reflector layer laid over the passivation layer, and a plurality of electrode pads coupled with the multi-layer structure. In a manufacture process of the light-emitting device, the reflector layer and the passivation layer are patterned to form at least one opening exposing an area of the multi-layer structure.

Abstract: A light-emitting device includes a multi-layer structure configured to emit a first light radiation, and a cap layer covering a surface area of the multi-layer structure while leaving exposed electrode areas defined thereon, wherein the cap layer is made of a material capable of emitting at least one second light radiation when stimulated by the first light radiation. The cap layer, being made of a material blend incorporating a passivation material and a luminescent material compound, is coated on the multi-layer structure.

Abstract: A light-emitting device comprises a light-emitting unit including a plurality of first connecting pads, a base substrate including a plurality of second connecting pads, and a plurality of conductive bumps that connect the first connecting pads of the light-emitting unit to the second connecting pads of the base substrate. In the manufacturing process, a reflow process is performed to bond the conductive bumps to the first and second connecting pads. The light-emitting unit is configured to emit a first light radiation upon the application of an electric current flow, and the base substrate is configured to emit a second light radiation when stimulated by the first light radiation.

Abstract: The present invention discloses a method for treating magnesium alloys by chemical conversion. This method can improve corrosion resistance and paint adhesion of magnesium alloys, and produces an admirable appearance. Additionally, the method of the present invention is more environmentally friendly than conventional processes, because non-chromate chemicals are used in acid pickling and chemical conversion. Furthermore, the method of the present invention can be widely applied to the magnesium alloys manufactured by casting and rolling.

Abstract: The present invention discloses a method for treating magnesium alloys by chemical conversion. This method can improve corrosion resistance and paint adhesion of magnesium alloys, and produces an admirable appearance. Additionally, the method of the present invention is more environmentally friendly than conventional processes, because non-chromate chemicals are used in acid pickling and chemical conversion. Furthermore, the method of the present invention can be widely applied to the magnesium alloys manufactured by casting and rolling.