Patents by Inventor Yu-Chuan PENG

Yu-Chuan PENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solid state storage device and write control method with different write modes therof
    Patent number: 11899976
    Abstract: A solid state storage device includes a control circuit, a volatile memory and a non-volatile memory. The non-volatile memory is divided into a first area and a second area. After the host issues a write command and a write data, the control circuit monitors a data amount of the write data continuously stored into the non-volatile memory. Before the data amount of the write data continuously stored into the non-volatile memory reaches a predetermined amount, the write data is stored into plural buffering blocks of the first area in a first write mode. After the data amount of the write data continuously stored into the non-volatile memory reaches the predetermined amount, the write data is stored into plural storing blocks of the second area in a second write mode.
    Type: Grant
    Filed: February 23, 2022
    Date of Patent: February 13, 2024
    Assignee: SOLID STATE STORAGE TECHNOLOGY CORPORATION
    Inventors: Liang-You Lin, Yu-Chuan Peng, Ya-Ping Pan, Po-Yen Chen
  • SOLID STATE STORAGE DEVICE AND WRITE CONTROL METHOD THEREOF
    Publication number: 20230195384
    Abstract: A solid state storage device includes a control circuit, a volatile memory and a non-volatile memory. The non-volatile memory is divided into a first area and a second area. After the host issues a write command and a write data, the control circuit monitors a data amount of the write data continuously stored into the non-volatile memory. Before the data amount of the write data continuously stored into the non-volatile memory reaches a predetermined amount, the write data is stored into plural buffering blocks of the first area in a first write mode. After the data amount of the write data continuously stored into the non-volatile memory reaches the predetermined amount, the write data is stored into plural storing blocks of the second area in a second write mode.
    Type: Application
    Filed: February 23, 2022
    Publication date: June 22, 2023
    Inventors: Liang-You LIN, Yu-Chuan PENG, Ya-Ping PAN, Po-Yen CHEN