Abstract: A device structure can be formed by forming a layer stack comprising a continuous bottom electrode material layer, a continuous dielectric layer, and a continuous dielectric metal oxide layer; increasing an oxygen-to-metal ratio in a top surface portion of the continuous dielectric metal oxide layer by incorporating oxygen atoms into the top surface portion of the continuous dielectric metal oxide layer; depositing a continuous semiconductor layer over the continuous dielectric metal oxide layer; and patterning the continuous semiconductor layer and the layer stack to form a patterned layer stack including a bottom electrode, a dielectric layer, a dielectric metal oxide layer, and a semiconductor layer.

Abstract: The present disclosure relates a ferroelectric field-effect transistor (FeFET) device. The FeFET device includes a ferroelectric structure having a first side and a second side. A gate structure is disposed along the first side of the ferroelectric structure, and an oxide semiconductor is disposed along the second side of the ferroelectric structure. The oxide semiconductor has a first semiconductor type. A source region and a drain region are disposed on the oxide semiconductor. The gate structure is laterally between the source region and the drain region. A polarization enhancement structure is arranged on the oxide semiconductor between the source region and the drain region. The polarization enhancement structure includes a semiconductor material or an oxide semiconductor material having a second semiconductor type that is different than the first semiconductor type.

Abstract: A field-effect transistor (FET), selectively switchable between first and second states, includes: source and drain regions and a channel region disposed therebetween; a gate arranged to selectively receive a bias voltage which switches the FET between the first and second states; a memory structure between the gate and the channel region, structure including a first portion which is anti-ferroelectric and a second portion which is ferroelectric, both portions being polarized in a first direction when the FET is in the first state; and a depolarization dielectric layer disposed proximate to the memory structure. When the FET is set to the first state, the depolarization dielectric layer destabilizes a polarization of the second portion of the memory structure while maintaining a polarization of the first portion.

Abstract: A semiconductor memory structure includes a gate structure, a ferroelectric layer over the gate structure, a channel layer over the ferroelectric layer, an intervening structure between the ferroelectric layer and the channel layer, and a source structure and a drain structure separated from each other over the channel layer. A thickness of the intervening structure is less than a thickness of the channel layer and less than a thickness of the ferroelectric layer. The channel layer and the intervening structure include different materials.

Abstract: An antiferroelectric field effect transistor (Anti-FeFET) of a memory cell includes an antiferroelectric layer instead of a ferroelectric layer. The antiferroelectric layer may operate based on a programmed state and an erased state in which the antiferroelectric layer is in a fully polarized alignment and a non-polarized alignment (or a random state of polarization), respectively. This enables the antiferroelectric layer in the FeFET to provide a sharper/larger voltage drop for an erase operation of the FeFET (e.g., in which the FeFET switches or transitions from the programmed state to the erased state) relative to a ferroelectric material layer that operates based on switching between two opposing fully polarized states.

Abstract: Provided are a ferroelectric memory device and a method of forming the same. The ferroelectric memory device includes: a gate electrode; a ferroelectric layer, disposed on the gate electrode; a channel layer, disposed on the ferroelectric layer; a pair of source/drain (S/D) electrodes, disposed on the channel layer; a first insertion layer, disposed between the gate electrode and the ferroelectric layer; and a second insertion layer, disposed between the ferroelectric layer and the channel layer, wherein the second insertion layer has a thickness less than a thickness of the first insertion layer.

Abstract: A semiconductor device includes a first electrode layer, a ferroelectric layer, a first alignment layer and a second electrode layer. A material of the first alignment layer includes rare-earth metal oxide. The ferroelectric layer and the first alignment layer are disposed between the first electrode layer and the second electrode layer, and the first alignment layer is disposed between the ferroelectric layer and the first electrode layer.

Abstract: An operating circuit including a system circuit and a power control circuit is provided. The system circuit operates according to the voltage of the node. The power control circuit includes a first connection port, a second connection port, a first always-on switch, a second always-on switch, a first current limiter, and a second current limiter. The first connection port is configured to receive first power provided by a first external device. The second connection port is configured to receive second power provided by a second external device. The first always-on switch is coupled to the first connection port to transmit the first power. The second always-on switch is coupled to the second connection port to transmit the second power. The first current limiter is coupled between the first always-on switch and the node. The second current limiter is coupled between the second always-on switch and the node.

Abstract: The invention is a biochemical sensing device, including a photodiode capable of sensing the light generated by the reaction made by a specific compound, a specific enzyme, and a luminol as well as converting the optical signal into a current signal. Also, there is a current/voltage converting circuit capable of converting the current signal into an analog voltage signal. In turn, the analog voltage signal can be converted into a digital voltage signal through an analog/digital converter. Finally, by using an electronic device, the digital voltage signal can be received and analyzed, and through the analysis, the amount of the specific compound can be measured. The device of the invention can provide a simple real-time medical assay that can be performed in massive amount. For this reason, the drawbacks of a conventional spectrum analysis instrument of being bulky and expensive can be improved.