Abstract: A method is provided for rebuilding a flash translation layer table of a solid state drive. The superblock includes plural superpages. Each of the plural superpages includes plural physical pages. The method includes steps of confirming if the flash translation layer table is lost or not after the solid state drive is powered on; if the flash translation layer table is lost, starting a superblock scanning method for determining a status of the superblock; and rebuilding the flash translation table according to the status of the superblock. The superblock scanning method includes steps of reading contents of a first physical page and a last physical page of a last superpage in the superblock, and determining a status of the superblock according to the contents of the first physical page and the last physical page.

Abstract: A data programming method for a solid state drive is provided. The solid state drive has a flash memory with plural blocks. If a garbage collection is determined to be performed, a first open block is selected from the plural blocks of the flash memory for storing a moved valid data corresponding to the garbage collection. Then, the moved valid data corresponding to the garbage collection is programmed into the first open block. A second open block is selected from the plural blocks of the flash memory for storing a write data from a host.

Abstract: A superblock scanning method is provided for scanning a superblock of a solid state drive. The superblock includes plural superpages. Each of the plural superpages includes plural physical pages. The superblock scanning method includes steps of reading contents of a first physical page and a last physical page of a last superpage in the superblock, and determining a status of the superblock according to the contents of the first physical page and the last physical page.

Abstract: A flash translation layer table rebuilding method for a solid state drive is provided. The solid state drive includes a non-volatile memory and a buffering circuit. Firstly, a flash translation layer table is loaded from the non-volatile memory to the buffering circuit. In case that an abnormal shutdown event occurs, plural blocks of the non-volatile memory to be read are determined according to a specified block programming serial number of the flash translation layer table. Then, a read sequence of reading the plural blocks is determined according to a block programming serial number or an auxiliary serial number corresponding to the block. The contents of the blocks are read according to the read sequence. A mapping relationship between plural physical allocation addresses and plural logical block addresses of the flash translation layer table is updated.

Abstract: A flash translation layer table rebuilding method for a solid state drive is provided. The solid state drive includes a non-volatile memory and a buffering circuit. Firstly, a flash translation layer table is loaded from the non-volatile memory to the buffering circuit. In case that an abnormal shutdown event occurs, plural blocks of the non-volatile memory to be read are determined according to a specified block programming serial number of the flash translation layer table. Then, a read sequence of reading the plural blocks is determined according to a block programming serial number or an auxiliary serial number corresponding to the block. The contents of the blocks are read according to the read sequence. A mapping relationship between plural physical allocation addresses and plural logical block addresses of the flash translation layer table is updated.

Abstract: A data programming method for a solid state drive is provided. The solid state drive has a flash memory with plural blocks. If a garbage collection is determined to be performed, a first open block is selected from the plural blocks of the flash memory for storing a moved valid data corresponding to the garbage collection. Then, the moved valid data corresponding to the garbage collection is programmed into the first open block. A second open block is selected from the plural blocks of the flash memory for storing a write data from a host.