Patents by Inventor Yu-Chun Huo

Yu-Chun Huo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE
    Publication number: 20230402426
    Abstract: A manufacturing method of a semiconductor structure including the following steps is provided. A first substrate is provided. A first dielectric structure is formed on the first substrate. At least one first cavity is formed in the first dielectric structure. A first stress adjustment layer is formed in the first cavity. The first stress adjustment layer covers the first dielectric structure. A second substrate is provided. A second dielectric structure is formed on the second substrate. At least one second cavity is formed in the second dielectric structure. A second stress adjustment layer is formed in the second cavity. The second stress adjustment layer covers the second dielectric structure. The first stress adjustment layer and the second stress adjustment layer are bonded.
    Type: Application
    Filed: July 27, 2022
    Publication date: December 14, 2023
    Applicant: Powerchip Semiconductor Manufacturing Corporation
    Inventors: Shih-Ping Lee, Shih-Hsorng Shen, Chih-Wei Su, Yu-Chun Huo