Abstract: An intraocular pressure inspection device includes an intraocular pressure detection unit, a high-precision positioning system and a wide-area positioning system, wherein according to the position of the intraocular pressure detection unit, a set of high-precision coordinates output by the high-precision positioning system and a set of wide-area coordinates output by the wide-area positioning system are integrated in appropriate weights to obtain a set of more precise integrated coordinate. The above-mentioned intraocular pressure inspection device can prevent the intraocular pressure detection unit from failing to operate once it is not in the working area of the high-precision positioning system.

Abstract: An artificial bone plate unit and an assembleable artificial bone plate are provided. The artificial bone plate unit includes a plate body, multiple connecting pins, connecting holes, drug cavities, and drug-releasing openings. The plate body has two main surfaces and a peripheral surface connected between the two main surfaces. The connecting pins and the connecting holes are formed on the plate body and arranged along the peripheral surface on the plate body. The connecting holes correspond in shape to the connecting pins. The drug cavities are formed in the artificial bone plate unit and are connected to the drug-releasing openings. The artificial bone plate units are connected using the connecting pins and the connecting holes to form the assembleable artificial bone plate. The assembleable artificial bone plate can be bent into the shape of a defect area of the skull, which saves material and time.

Abstract: A dual mode charge control method includes steps of: detecting an input voltage of the resonance tank, a resonance current of the resonance tank, an output current of the load, and an output voltage of the load; performing a single-band charge control when determining a light-load condition or a no-load condition of the load according to the output current; compensating the output voltage to generate an upper threshold voltage in the single-band charge control, and acquiring a resonance voltage by calculating the resonance current by a resettable integrator; comparing the resonance voltage and the upper threshold voltage to generate a first control signal; generating a second control signal complementary to the first control signal by a pulse-width modulation duplicator; providing the first control signal and the second control signal to respectively control a first power switch and a second power switch of the resonance circuit.

Abstract: A microfluidic detection unit comprises at least one fluid injection section, a fluid storage section and a detection section. Each fluid injection section defines a fluid outlet; the fluid storage section is in gas communication with the atmosphere and defines a fluid inlet; the detection section defines a first end in communication with the fluid outlet and a second end in communication with the fluid inlet. A height difference is defined between the fluid outlet and the fluid inlet along the direction of gravity. When a first fluid is injected from the at least one fluid injection section, the first fluid is driven by gravity to pass through the detection section and accumulate to form a droplet at the fluid inlet, such that a state of fluid pressure equilibrium of the first fluid is established.

Abstract: A package structure includes a first RDL, an adhesive layer and a first electronic component. Upper bumps and conductive pads are provided on a first upper surface and a first lower surface of the first RDL, respectively. The adhesive layer is located on the first upper surface of the first RDL and surrounds the upper bumps. The first electronic component is mounted on the adhesive layer and includes conductors which are visible from an active surface of the first electronic component and joined to the upper bumps, the active surface of the first electronic component faces toward the first upper surface of the first RDL. Two adhesive surfaces of the adhesive layer are adhered to the first upper surface of the first RDL and the active surface of the first electronic component, respectively.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes an insulation layer. A bottom electrode via is disposed in the insulation layer. The bottom electrode via includes a conductive portion and a capping layer over the conductive portion. A barrier layer surrounds the bottom electrode via. A magnetic tunneling junction (MTJ) is disposed over the bottom electrode via.

Abstract: A method includes forming a first sealing layer at a first edge region of a first wafer; and bonding the first wafer to a second wafer to form a wafer stack. At a time after the bonding, the first sealing layer is between the first edge region of the first wafer and a second edge region of the second wafer, with the first edge region and the second edge region comprising bevels. An edge trimming process is then performed on the wafer stack. After the edge trimming process, the second edge region of the second wafer is at least partially removed, and a portion of the first sealing layer is left as a part of the wafer stack. An interconnect structure is formed as a part of the second wafer. The interconnect structure includes redistribution lines electrically connected to integrated circuit devices in the second wafer.

Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

Abstract: Provided is a high ruggedness heterojunction bipolar transistor (HBT), including a collector layer. The collector layer includes a InGaP layer or a wide bandgap layer. The bandgap of the InGaP layer is greater than 1.86 eV.

Abstract: A semiconductor device includes a first contact layer, a second contact layer, an active layer, a photonic crystal layer, a passivation layer, a first electrode and a second electrode. The first contact layer has a first surface and a second surface opposite to each other. Microstructures are located on the second surface. The second contact layer is located below the first surface. The active layer is located between the first contact layer and the second contact layer. The photonic crystal layer is located between the active layer and the second contact layer. The passivation layer is located on the second contact layer. The first electrode is located on the passivation layer and is electrically connected the first surface of the first contact layer. The second electrode is located on the passivation layer and is electrically connected to the second contact layer.

Abstract: A heterojunction bipolar transistor structure is provided, including a substrate and a multi-layer structure formed on the substrate. The multi-layer structure includes a current clamping layer, and the current clamping layer can be disposed in a collector layer, disposed in a sub-collector layer, or interposed between a collector layer and a sub-collector layer. An electron affinity of the current clamping layer is less than an electron affinity of an epitaxial layer formed on the current clamping layer.

Abstract: A wafer container includes a frame, a door and at least a pair of shelves. The frame has opposite sidewalls. The pair of the shelves are respectively disposed and aligned on the opposite sidewalls of the frame. Various methods and devices are provided for holding at least one wafer to the shelves during transport.

Abstract: The present invention is a semiconductor device having a defect blocking region. The semiconductor device includes a substrate, a defect source region, a semiconductor layer and a defect blocking region. The defect source region is on the substrate, wherein the defect source region is a metamorphic buffer layer or a buffer layer, the semiconductor layer over the defect source region, wherein a lattice constant of the semiconductor layer is different from a lattice constant of the substrate. The defect blocking region is disposed on the substrate and below the semiconductor layer, wherein the defect blocking region includes a superlattice structure, wherein at least one of two adjacent layers of the superlattice structure has strain relative to the semiconductor layer, or a lattice constant of the superlattice structure is close to or equal to the lattice constant of the semiconductor layer.

Abstract: A microfluidic detection unit comprises at least one fluid injection section, a fluid storage section and a detection section. Each fluid injection section defines a fluid outlet; the fluid storage section is in gas communication with the atmosphere and defines a fluid inlet; the detection section defines a first end in communication with the fluid outlet and a second end in communication with the fluid inlet. A height difference is defined between the fluid outlet and the fluid inlet along the direction of gravity. When a first fluid is injected from the at least one fluid injection section, the first fluid is driven by gravity to pass through the detection section and accumulate to form a droplet at the fluid inlet, such that a state of fluid pressure equilibrium of the first fluid is established.

Abstract: An atomizing nozzle structure comprises a first body, a second body and a cover combined in order serially to form a combination, wherein a chamber is formed in an inner axial direction of the combination; and a rotor, an anti-leakage assembly and a filtering assembly mounted in the chamber in order. The filtering assembly is a combination of a core and a filter. The core has an embedding portion and a closing portion on two ends, respectively. A hollow portion connects the embedding portion to the closing portion. An air passage is formed in an axial inner portion of the embedding portion. Grooves are formed on a circumferential side surface of the closing portion. The filter is mounted in the hollow portion. The embedding portion is inserted into one end of the second body. Thus, the filtering assembly is combined with the second body by way of insertion, so that the filtering assembly can be stably positioned to facilitate the disassembly for replacement or cleaning.

Abstract: An apparatus for positioning a heat sink includes a base plate, two support assemblies and a mounting assembly. The base plate placed on a circuit board has an opening. The two support assemblies are disposed on two opposing sides of the opening respectively, and exposed partly to the opening for supporting a heat sink thereon. The mounting assembly includes a frame and a positioning member. The frame contacts the support assembly, and the positioning member is fixed on the frame. When the mounting assemblies move in a preset direction, the positioning member engages the heat sink, and the support assemblies would be retrieved from the opening, whereby the heat sink would be lowered to the heat sink setting area via the opening.

Abstract: An apparatus for positioning a heat sink includes a base plate, two support assemblies and a mounting assembly. The base plate placed on a circuit board has an opening. The two support assemblies are disposed on two opposing sides of the opening respectively, and exposed partly to the opening for supporting a heat sink thereon. The mounting assembly includes a frame and a positioning member. The frame contacts the support assembly, and the positioning member is fixed on the frame. When the mounting assemblies move in a preset direction, the positioning member engages the heat sink, and the support assemblies would be retrieved from the opening, whereby the heat sink would be lowered to the heat sink setting area via the opening.

Abstract: A reflection-based tubular waveguide particle plasmon resonance sensing system and a sensing device thereof are provided. The sensing device includes a hollow tubular waveguide element having wall, a reflection layer disposed on one end of the wall (distal end), and a noble metal nanoparticle layer distributed on the surface of the wall. An incident light enters the wall through another end of the tubular waveguide element (proximal end) and being total internal reflected many times along the wall, then is reflected by the reflection layer and being total internal reflected many times along the wall again, and finally, the incident light exits the proximal end. Wherein, when the sample contacts the noble metal nanoparticle layer of the tubular waveguide element, the particle plasmon resonance condition is altered and hence the signal intensity of the light exiting the tubular waveguide element changes.

Abstract: A reflection-based tubular waveguide particle plasmon resonance sensing system and a sensing device thereof are provided. The sensing device includes a hollow tubular waveguide element having wall, a reflection layer disposed on one end of the wall (distal end), and a noble metal nanoparticle layer distributed on the surface of the wall. An incident light enters the wall through another end of the tubular waveguide element (proximal end) and being total internal reflected many times along the wall, then is reflected by the reflection layer and being total internal reflected many times along the wall again, and finally, the incident light exits the proximal end. Wherein, when the sample contacts the noble metal nanoparticle layer of the tubular waveguide element, the particle plasmon resonance condition is altered and hence the signal intensity of the light exiting the tubular waveguide element changes.

Abstract: A data access apparatus and a processing system using the same are disclosed herein, which can be a power-off status to permit its storage media being accessible by another processing system. When a bus signal switching and conversion unit receives a first-level control signal, the storage media is permitted to electrically connect only with a first bus channel and to perform a conversion between a first and second bus interface formats to the accessed data and to supply a system power based on a first power signal from the processing system to the storage media. When the bus signal switching and conversion unit receives the second-level control signal, the storage media is permitted to electrically connect only with a second bus channel and to perform a conversion between a second and third bus interface formats to the accessed data, and to supply a system power based on a second power signal from the another processing system to the storage media.